KR950004508A - Manufacturing method of plastic solid-state imaging device package - Google Patents

Manufacturing method of plastic solid-state imaging device package Download PDF

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Publication number
KR950004508A
KR950004508A KR1019930014051A KR930014051A KR950004508A KR 950004508 A KR950004508 A KR 950004508A KR 1019930014051 A KR1019930014051 A KR 1019930014051A KR 930014051 A KR930014051 A KR 930014051A KR 950004508 A KR950004508 A KR 950004508A
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KR
South Korea
Prior art keywords
wall
manufacturing
plastic solid
glass
state image
Prior art date
Application number
KR1019930014051A
Other languages
Korean (ko)
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KR960000707B1 (en
Inventor
허기록
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019930014051A priority Critical patent/KR960000707B1/en
Publication of KR950004508A publication Critical patent/KR950004508A/en
Application granted granted Critical
Publication of KR960000707B1 publication Critical patent/KR960000707B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 플라스틱 고체촬상소자 패키지 제조방법에 관한 것으로, 생산성 향상을 기할수 있도록 하기위하여 웨이퍼 상태의 각 소자의 수광영역부 주위에 글래스리드 탑재를 위한 소정높이의 벽체를 마스크를 이용하여 일괄적으로 형성한후, 개개의 소자로 분리하는 소잉공정, 다이본딩 공정, 글래스리드 어태치 공정, 와이어본딩 공정, 몰딩 공정 및 트림/포밍 공정을 진행하는 것을 특징으로 하고 있다. 이와 같은 본 발명의 패키지 제조방법에 의하면, 웨이퍼 상태에서 각 소자의 수광영역부 주위에 글래스리드 탑재를 위한 벽체를 일괄적으로 형성함으로써 종래 소잉된 개개의 소자에 절연필름벽을 형성하는 기술에 비해 생산성을 현저하게 높일수 있는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a plastic solid-state image pickup device package. In order to improve productivity, a wall having a predetermined height for mounting glass lid around the light receiving area of each device in a wafer state is collectively used using a mask. After the formation, the sawing process, the die bonding process, the glass lead attach process, the wire bonding process, the molding process, and the trimming / forming process are performed. According to the package manufacturing method of the present invention, the glass film mounting wall is collectively formed around the light-receiving area of each device in a wafer state, compared to the technique of forming an insulating film wall on individual elements that have been conventionally sawed. Productivity can be increased significantly.

Description

플라스틱 고체촬상소자 패키지 제조방법Manufacturing method of plastic solid-state imaging device package

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 플라스틱 고체촬상소자 패키지의 제조공정 플로우챠트.3 is a flowchart of a manufacturing process of a plastic solid-state image pickup device package according to the present invention.

Claims (5)

웨이퍼 상태의 각 소자의 수광영역부 주위에 글래스리드 탑재를 위한 소정높이의 벽체를 마스크를 이용하여 일괄적으로형성한 후, 개개의 소자로 분리하는 소잉공정, 다이본딩공정, 글래스리디 어태치 공정, 와이어본딩 공정, 몰딩공정 및 트림/포밍 공정을 진행함을 특징으로 하는 플라스틱 고체촬상소자 패키지 제조방법.Forming a wall of a predetermined height for mounting glass leads around the light-receiving area of each device in a wafer state using a mask, and then separating them into individual elements, a die bonding process, and a glass lead attach process. The method of manufacturing a plastic solid-state image package, characterized in that the wire bonding process, molding process and trim / forming process. 제1항에 있어서, 상기 벽체 형성은 웨이퍼위에 벽체형성 패턴이 형성된 마스크를 탑재하여 벽체형성 재질을 라미레이션한후, 포토 및 디벨로프 공정을 진행하여 형성하는 것을 특징으로 하는 플라스틱 고체촬상소자 패키지 제조방법.The method of claim 1, wherein the wall is formed by mounting a mask on which a wall forming pattern is formed on a wafer, laminating a wall forming material, and then performing a photo and development process to manufacture the plastic solid state image package. Way. 제2항에 있어서, 벽체형성 재질로는 포토레지스트를 사용하는 것을 특징으로 하는 플라스틱 고체촬상소자 패키지 제조방법.The method of claim 2, wherein a photoresist is used as a wall forming material. 제2항에 있어서, 벽체형성재질로는 접착력이 있는 패시베이션 재질(Si3N4)을 사용하는 것을 특징으로 하는 플라스틱 고체촬상소자 패키지 제조방법.The method of claim 2, wherein the wall forming material is an adhesive passivation material (Si 3 N 4 ). 제1항에 있어서, 상기 글래스리드 어태치 공정은 열압착 본딩방식으로 밀착시키는 것을 특징으로 하는 플라스틱 고체촬상소자 패키지 제조방법.The method of claim 1, wherein the glass lead attach process is a method of manufacturing a plastic solid-state image package according to claim 1, wherein the glass lead attach process is in close contact. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014051A 1993-07-23 1993-07-23 Manufacturing method for package KR960000707B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014051A KR960000707B1 (en) 1993-07-23 1993-07-23 Manufacturing method for package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930014051A KR960000707B1 (en) 1993-07-23 1993-07-23 Manufacturing method for package

Publications (2)

Publication Number Publication Date
KR950004508A true KR950004508A (en) 1995-02-18
KR960000707B1 KR960000707B1 (en) 1996-01-11

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ID=19359922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930014051A KR960000707B1 (en) 1993-07-23 1993-07-23 Manufacturing method for package

Country Status (1)

Country Link
KR (1) KR960000707B1 (en)

Also Published As

Publication number Publication date
KR960000707B1 (en) 1996-01-11

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