KR950004153Y1 - Sensing circuit for cooling water supplying system of ion implanter - Google Patents
Sensing circuit for cooling water supplying system of ion implanter Download PDFInfo
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- KR950004153Y1 KR950004153Y1 KR92013975U KR920013975U KR950004153Y1 KR 950004153 Y1 KR950004153 Y1 KR 950004153Y1 KR 92013975 U KR92013975 U KR 92013975U KR 920013975 U KR920013975 U KR 920013975U KR 950004153 Y1 KR950004153 Y1 KR 950004153Y1
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- cooling water
- relay
- water supply
- ion implanter
- flow switch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
내용 없음.No content.
Description
제1도는 종래 냉각수 공급을 보인 계통도.1 is a system diagram showing a conventional cooling water supply.
제2도는 본 고안에 따른 냉각수 공급을 보인 계통도.Figure 2 is a schematic diagram showing a cooling water supply according to the present invention.
제3도는 본 고안 이온주입기의 냉각수 공급 감지회로도.3 is a cooling water supply detection circuit of the present invention ion implanter.
제4도는 본 고안에 따른 플로우스위치의 설명도.4 is an explanatory diagram of a flow switch according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1, 11 : 이온분석기 1A, 11A : 냉각수공급부1, 11: ion analyzer 1A, 11A: cooling water supply unit
1B, 11B : 냉각수배수부 2, 12 : CFC어셈블리1B, 11B: Cooling water drainage part 2, 12: CFC assembly
10 : 릴레이구동부 13 : 연결파이프10: relay drive unit 13: connection pipe
14 : 용수철 15 : 자성체14: spring 15: magnetic material
16 : 인입구 17 : 배출구16: inlet 17: outlet
20 : 표시부 F/S1: 플로우스위치20: display part F / S 1 : flow switch
RY1: 릴레이 LED1: 발광다이오드RY 1 : Relay LED 1 : Light Emitting Diode
PC1: 포토커플러 R1-R3: 저항PC 1 : Photocoupler R 1 -R 3 : Resistance
본 고안은 이온주입기의 냉각수 공급장치에 관한 것으로, 특히 이온주입시 동작시 냉각수 공급챵 및 공급여부를 감지하여 비정상적인 냉각수 공급시 동작을 제어하는 이온주입기의 냉각수 공급감지회로에 관한 것이다.The present invention relates to a cooling water supply device of the ion implanter, and more particularly, to a cooling water supply detection circuit of the ion implanter to control the operation during abnormal cooling water supply by detecting the cooling water supply 챵 and supply status during operation during ion implantation.
제1도는 종래 냉각수 공급을 보인 계통도로서 이에 도시된 바와같이, 냉각수공급부(1A)에서 호스연결부(CNT1)를 통해 냉각수가 CFC변환부(2)에 공급되고 상기 CFC변환부(2)에서 호스연결부(CNT2)로 방출되도록 구성된 것으로, 상기 냉각수공급부(1A) 및 냉각수배수부(1B)는 이온분석기(Analyzer unit)에 포함되어 구성된 것이다.1 is a schematic diagram showing a conventional cooling water supply, as shown here, the cooling water is supplied to the CFC conversion unit 2 through the hose connection part CNT 1 in the cooling water supply unit 1A and the hose in the CFC conversion unit 2. It is configured to be discharged to the connection portion (CNT 2 ), the cooling water supply unit 1A and the cooling water drainage unit (1B) is configured to be included in the ion analyzer (Analyzer unit).
이와같이 구성된 종래 회로의 동작과정을 설명하면 다음과 같다.Referring to the operation of the conventional circuit configured as described above are as follows.
먼저, 이온주입기(Ion Implanter)로 웨이퍼(Wafer)에 이온을 주입하려 할때 사용자는 CFC어셈블리(2)로 이온주입할 조건인 이온 빔모양, 이온 빔 전류량등을 맞추기 위해 이온 빔의 위치를 셋업하여 이온주입기(Ion Implanter)로 웨이퍼(Wafer)에 이온을 주입한다.First, when implanting ions into a wafer with an ion implanter, the user sets up the position of the ion beam to match the ion beam shape, ion beam current, etc., which are the conditions for ion implantation into the CFC assembly (2). By implanting ions into the wafer (wafer) by the ion implanter (Ion Implanter).
이때, 이온분석기(Analyer unit)는 이온주입기(Ion Implanter)에서 생성된 이온 빔을 분석하며, CFC어셈블리(2)의 열 발생을 방지하기 위하여 냉각수공급부(1A)에서 호스연결부(CNT1)를 통해 냉각수를 상기 CFC어셈블리(2)에 공급하고 공급된 냉가수는 호스연결부(CNT2)를 통해 냉각수배수부(1B)에 배출되어 상기 CFC 어셈블리(2)를 냉각시킨다.At this time, the ionizer unit analyzes the ion beam generated by the ion implanter, and through the hose connection part CNT 1 in the cooling water supply unit 1A to prevent heat generation of the CFC assembly 2. Cooling water is supplied to the CFC assembly 2 and the supplied cold water is discharged to the coolant drain 1B through a hose connection part CNT 2 to cool the CFC assembly 2.
그러나, 이와같은 종래 회로는 공급되는 냉각수의 량과 공급여부를 감지하는 기능이 없어 냉각수 공급이 없거나 또는 공급량이 부족할때도 기능이 없어 냉각수 공급이 없거나 또는 공급량이 부족할때도 장비가 동작함으로써 CFC 어셈블리에서 발생되는 열에 의해 절연체(Insulator) 및 O-Ring등의 부품이 손상되는 문제점이 있었다.However, such a conventional circuit does not have a function of detecting the amount of coolant supplied and whether there is no supply of the coolant, and thus there is no function when the supply of the coolant is insufficient or the supply is insufficient. There was a problem that parts such as insulator and O-ring are damaged by heat.
본 고안은 이러한 문제점을 감안하여 CFC 어셈블리에 공급되는 냉각수 량과 공급여부를 감지함에 따라 이온주입기의 동작을 제어하는 이온주입기의 냉각수 공급 감지회로를 안출한 것으로, 이를 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The present invention has been made in view of the above-mentioned problems in the cooling water supply detection circuit of the ion implanter to control the operation of the ion implanter in accordance with the amount of cooling water supplied to the CFC assembly, and will be described in detail with reference to the accompanying drawings. Is as follows.
제3도는 본 고안 이온주입기의 냉각수 공급 감지회로도로서 이에 도시한 바와같이, 냉각수 공급량에 따라 온·오프하는 플로우스위치(Flow Switch)(F/S1)와, 포토커플러(PC1) 및 저항(R1)(R2)으로 구성하여 상기 플로우스위치(F/S1)의 온·오프에 따라 릴레이구동신호(RS1)를 출력하는 릴레이구동부(10)와, 발광다이오드(LED1) 및 저항(R3)으로 구성하여 상기 릴레이구동부(10)의 출력(RS1)에 따라 냉각수 공급여부를 표시하는 표시부(20)와, 상기 릴레이구동부(10)의 출력(RS1)에 따라 마그네트론(도면 미표시)에 전원(AC)공급을 제어하는 릴레이(RY1)로 구성한다.3 is a cooling water supply detection circuit diagram of the present invention ion implanter, as shown in the flow switch (F / S 1 ), the photocoupler (PC 1 ) and the resistance ( R 1 ) (R 2 ) and a relay driver 10 for outputting the relay drive signal RS 1 according to the on / off of the flow switch F / S 1 , a light emitting diode LED 1 , and a resistor. (R 3) depending on the configuration, the output (RS 1) of the relay drive unit 10 outputs a display portion 20 for displaying whether or not the cooling water supply in accordance with (RS 1), the relay driver (10) of the magnetron (the drawing It is composed of a relay (RY 1 ) that controls the supply of power (AC) to the display.
제2도는 본 고안에 따른 냉각수 공급을 보인 계통도로서 이에 도시한 냉각수공급부(11A)에서 호스연결부(12)를 통해 냉각수가 CFC 어셈블리(12)에 공급되고 이 CFC어셈블리(12)에서 순차적으로 호스연결부(CNT12), 플로우스위치(F/S1)를 통해 냉각수가 냉각수배수부(11B)에 공급되게 접속하여 구성한 것으로, 상기 플로우스위치(FS1)는 제4도에 도시한 바와같이, CFC 어셈블리(12)와 냉각수배수구(11B)사이에 접속된 연결파이프(13)내부에 자성체(15)가 접속된 용수철(14)을 배출구(17)에 부착하고 상기 연결파이프(13) 상부에 플로우스위치(F/S1)를 부착하여 인입구(16)로 유입되는 냉각수 양에 따라 상기 자성체(15)가 A 또는 B방향으로 움직임으로써 상기 플로우스위치(FS1)의 접점이 온·오프되도록 구성한다.2 is a schematic diagram showing the supply of the coolant according to the present invention. (CNT 12 ), and configured to connect the cooling water to the cooling water draining portion (11B) through the flow switch (F / S 1 ), the flow switch (FS 1 ) as shown in Figure 4, the CFC assembly A spring 14 having a magnetic body 15 connected to the inside of the connection pipe 13 connected between the cooling pipe 12 and the cooling water drain 11B is attached to the discharge port 17 and a flow switch on the connection pipe 13. The magnetic body 15 moves in the A or B direction depending on the amount of cooling water flowing into the inlet 16 by attaching the F / S 1 ) so that the contact point of the flow switch FS 1 is turned on and off.
이와같이 구성한 본 고안 이온주입기의 냉각수 공급장치 감지회로의 작용 및 효과를 상세히 설명하면 다음과 같다.The operation and effects of the cooling water supply detection circuit of the present invention ion implanter constructed as described above are described in detail.
먼저, 웨이퍼(Wafer)에 이온을 주입하기 위해 이온주입기(Ion Implanter)을 작동시킴에 따라 CFC어셈블리(12)에서 열이 발생됨으로 이 발생열을 냉각시키기 위해 냉각수공급부(11A)에서 냉각수가 상기 CFC어셈블리(12)에 공급되고 이 공급된 냉각수는 플로우스위치(F/S1)를 거쳐 냉각수배수부(11B)로 방출된다.First, since the heat is generated in the CFC assembly 12 as the ion implanter is operated to inject ions into the wafer, the coolant in the cooling water supply unit 11A to cool the generated heat is supplied to the CFC assembly. The supplied cooling water is discharged to the cooling water drainage portion 11B via the flow switch F / S 1 .
이때, 냉가수공급부(11A)에서 CFC어셈블리(12)로 정상적으로 냉각수가 공급되면 상기 CFC어셈블리(12)에서 냉각수배수부(11B)로 냉각수가 방출될때 연결파이프(13) 내부의 용수철(14)에 부착된 자성체(15)가 유압에 의해 B방향으로 이동하여 플로우스위치(F/S1)의 접점이 온된다.At this time, when the coolant is normally supplied from the cold water supply unit 11A to the CFC assembly 12, when the coolant is discharged from the CFC assembly 12 to the cooling water drainage unit 11B, the spring 14 in the connection pipe 13 is discharged. The attached magnetic body 15 moves in the B direction by hydraulic pressure so that the contact point of the flow switch F / S 1 is turned on.
따라서, 플로우스위치(F/S1)의 접점이 온되어 릴레이구동부(10)의 포토커플러(PC1)에 전압(B1 +)이 흘러 발광다이오드(PD1)가 온됨으로써 수광트랜지스터(PT1)가 턴온되고 전압(B2 +)이 상기 수광트랜지스터(PT1)를 통해 고전위의 릴레이구동신호(RS1)로 표시부(20)와 릴레이(RY1)에 출력한다.Accordingly, the contact point of the flow switch F / S 1 is turned on so that the voltage B 1 + flows to the photocoupler PC 1 of the relay driver 10 so that the light emitting diode PD 1 is turned on to receive the light receiving transistor PT 1. ) Is turned on and the voltage B 2 + is output to the display unit 20 and the relay RY 1 through the light receiving transistor PT 1 as a high potential relay driving signal RS 1 .
이에따라, 고전위의 릴레이구동부(RS1)에 의해 표시부(10)의 발광다이오드(LED1)가 온되어 냉각수 공급이 정상적임을 표시하고 릴레이(RY1)의 접점(a)(b)을 온시켜 전원전압(AC)을 마그네트론(도면 미표시)에 공급함으로써 이온주입기(Ion Implanter)를 정상적으로 동작시킨다.Accordingly, the light emitting diode LED 1 of the display unit 10 is turned on by the high potential relay driver RS 1 to indicate that the cooling water supply is normal, and to turn on the contacts a and b of the relay RY 1 . The ion implanter operates normally by supplying the power supply voltage AC to the magnetron (not shown).
한편, 냉각수공급부(11A)에서 CFC어셈블리(12)로 냉각수 공급이 중단되거나 공급량이 부족할때 연결파이프(13)내부의 자성체(15)가 A방향으로 이동하여 플로우스위치(F/S1)의 접점이 오프된다.On the other hand, when the cooling water supply to the CFC assembly 12 from the cooling water supply unit 11A is stopped or the supply amount is insufficient, the magnetic material 15 inside the connection pipe 13 moves in the A direction to contact the flow switch F / S 1 . Is off.
이때, 릴레이구동부(10)의 포토커플러(PC1)에 전압(B1 +)이 흐르지 않으므로 릴레이구동신호(RS1)가 저전위로 출력하여 표시부(20)의 발광다이오드(LED1)가 오프되어 냉각수의 공급중단 또는 공급량 부족을 표시하고 릴레이 (RY1)의 접점(a)(b)이 오프되어 마그네트론(도면 미표시)으로 전원(AC)공급이 오프된다.At this time, since the voltage B 1 + does not flow through the photocoupler PC 1 of the relay driver 10, the relay driver signal RS 1 is output at a low potential so that the light emitting diode LED 1 of the display unit 20 is turned off. The supply of the cooling water is interrupted or the supply is insufficient, and the contacts (a) and (b) of the relay RY 1 are turned off to turn off the power supply AC to the magnetron (not shown).
따라서, 마그네트론(도면 미표시)이 오프되어 마이크로웨이브공급(Ion Sourse부로의 마이크로웨이브방사)이 중단됨으로써 이온주입기(Ion Implanter)의 동작이 중단되고 이온 빔 발생이 중단되여 중앙처리장치(도면 미표시)에 내장된 프로그램에 의해 마그네트론파워공급에러(Magnetron power supply error)가 발생된다.Therefore, the magnetron (not shown) is turned off to stop the microwave supply (microwave radiation to the ion sourse), thereby stopping the operation of the ion implanter and generating the ion beam, which causes the central processing unit (not shown) to stop. The built-in program generates a magnetron power supply error.
상기에서 상세히 설명한 바와같이 본 고안 이온주입기의 냉각수 공급 감지장치는 CFC어셈블리에 공급되는 냉가수의 량에 따라 플로우스위치가 동작하여 마그네트론에 전원공급을 자동으로 제어함으로써 비정상적인 냉각수 공급시 이온주입기의 손상을 방지할 수 있는 효과가 있다.As described in detail above, the coolant supply detection device of the present invention ion implanter operates the flow switch according to the amount of cold water supplied to the CFC assembly to automatically control the power supply to the magnetron, thereby preventing damage to the ion implanter during abnormal cooling water supply. There is an effect that can be prevented.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92013975U KR950004153Y1 (en) | 1992-07-28 | 1992-07-28 | Sensing circuit for cooling water supplying system of ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR92013975U KR950004153Y1 (en) | 1992-07-28 | 1992-07-28 | Sensing circuit for cooling water supplying system of ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940004309U KR940004309U (en) | 1994-02-24 |
| KR950004153Y1 true KR950004153Y1 (en) | 1995-05-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR92013975U KR950004153Y1 (en) | 1992-07-28 | 1992-07-28 | Sensing circuit for cooling water supplying system of ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950004153Y1 (en) |
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1992
- 1992-07-28 KR KR92013975U patent/KR950004153Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR940004309U (en) | 1994-02-24 |
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