KR950002136A - 면 발광형 제 2 고조파 생성소자 - Google Patents

면 발광형 제 2 고조파 생성소자 Download PDF

Info

Publication number
KR950002136A
KR950002136A KR1019940014928A KR19940014928A KR950002136A KR 950002136 A KR950002136 A KR 950002136A KR 1019940014928 A KR1019940014928 A KR 1019940014928A KR 19940014928 A KR19940014928 A KR 19940014928A KR 950002136 A KR950002136 A KR 950002136A
Authority
KR
South Korea
Prior art keywords
harmonic
superlattice
layer
generating element
phase matching
Prior art date
Application number
KR1019940014928A
Other languages
English (en)
Inventor
노리히데 야마다
요시카쯔 이찌무라
Original Assignee
쟈크 에이.레넬
휴렛트 팩카드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쟈크 에이.레넬, 휴렛트 팩카드 캄파니 filed Critical 쟈크 에이.레넬
Publication of KR950002136A publication Critical patent/KR950002136A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/37—Non-linear optics for second-harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

본 발명은 상온에서 고효율이고 고출력의 제2고조파를 발생할 수 있고, 또한 소형, 저에너지소비, 저제조 코스트의 면 발광형 제2고조파 생성 소자를 제공하기 위한 것이다. 공진기 내의 반도체 결정의 〈100〉이 광사 방향과 5°이상의 각을 이루는 경우(특히 〈111〉,〈211〉,〈110〉중의 어떤 것이 광사 방향과 거의 일치하는 경우)에는, 제2고조파가 효율좋게 생성되고, 또한, 광사측 반사경(10)과 스페이서층(6) 사이에, Ⅲ-Ⅴ 또는 Ⅱ-Ⅵ족계 화합물 반도체로 되는 제2고조파 발생부(9)를 형성하면 제2고조파를 보다 고효율로 생성할 수 있고, 또한, 스페이서층(6)을 초격자에 의해 형성하는 것도 가능하고, 활성층(6) 및 스페이서층(4),(6)을 초격자에 의해 형성할 수도 있으며, 스페이서층이나 활성층에 위상 정합층으로서의 작용을 갖게 하는 것에 의해 고효율의 제2고조파를 생성할 수도 있다.

Description

면 발광형 제2고조파 생성소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 제2고조파 생성소자의 일 실시예를 도시한 것으로서, 소자전체를 도시한 단면설명도, 제2도는 1도에 있어서 a부의 각 층의 단면 설명도, 제3도는 본 발명에 따른 제2고조파 생성소자의 다른 실시예를 도시한 각층의 단면설명도, 제4도는 본 발명의 작용을 설명하기 위한, 비선형계수로 되는 행렬 및 기판의 방향을 도시한 도면, 제5도는 본 발명의 작용을 설명하기 위한, 비선형계수로 되는 행렬 및 기판의 방향을 도시한 도면.

Claims (7)

  1. Ⅲ-Ⅴ족계 또는 Ⅱ-Ⅵ족계 화합물 반도체 결정으로 이루어지는 활성층과, 상기 활성층의 양측에 형성된 스페이서층과, 양 스페이서층의 활성층과는 반대측에 위치하게 형성되고, 한쪽이 제2고조파를 소정율로 투과시키는 한 쌍의 반사경을 공진기로서 갖게 되는 면 발광형 제2고조파 생성 소자로서, 상기 공진기 내의 반도체 결정의 〈100〉방위가 방사 방향과 5°이상의 각도를 이루는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  2. 제1항에 있어서, 상기 공진기내의 반도체 결정의 〈111〉,〈211〉,〈110〉방위중의 어떤것이 광사출방향과 거의 일치하는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  3. 제1항 또는 제2항에 있어서, 상기 제2고조파를 투과시키는 반사경과 상기 반사경쪽에 위치하는 스페이서층 사이에, Ⅲ-Ⅴ족계 또는 Ⅱ-Ⅵ족계 화합물 반도체 로 이루어지는 위상정합층이 형성되어 있는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  4. 제1항 내지 제3항중의 어느 한 항에 있어서, 상기 위상정합층이 상기 공진기내의 반도체 결정과 동일한 방위를 갖는 초격자에 의해 구성되며 상기 초격자가 실효적으로 비선형 계수의 크기를 변조할 수 있는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  5. 제1항 내지 제3항중의 어느 한 항에 있어서, 상기 위상정합층이 초격자에 의해 구성되며 상기 초격자가 비선형 계수의 부호를 반전시킬 수 있는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  6. 제1항 내지 제5항 중의 어느 한 항에 있어서, 제2고조파 출력단에 마련된 스페이서층이 위상정합층으로서도 작용하는 초격자에 의해 이루어지는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
  7. 제1항 내지 제5항중의 어느 한 항에 있어서, 활성층 및 스페이서층이 위상정합층으로서도 작용하는 초격자에 의해 형성되는 것을 특징으로 하는 면 발광형 제2고조파 생성 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940014928A 1993-06-30 1994-06-28 면 발광형 제 2 고조파 생성소자 KR950002136A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-186877 1993-06-30
JP5186877A JPH0730181A (ja) 1993-06-30 1993-06-30 面発光型第２高調波生成素子

Publications (1)

Publication Number Publication Date
KR950002136A true KR950002136A (ko) 1995-01-04

Family

ID=16196250

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940014928A KR950002136A (ko) 1993-06-30 1994-06-28 면 발광형 제 2 고조파 생성소자

Country Status (4)

Country Link
EP (1) EP0632553B1 (ko)
JP (1) JPH0730181A (ko)
KR (1) KR950002136A (ko)
DE (1) DE69402120T2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69610567T2 (de) * 1995-01-20 2001-05-31 Matsushita Electric Ind Co Ltd Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
US7502393B2 (en) 2004-12-02 2009-03-10 Canon Kabushiki Kaisha Light-emitting device having resonator and light source unit including the light-emitting device
JP2007165562A (ja) 2005-12-13 2007-06-28 Seiko Epson Corp 光源装置、および光源装置を備えたプロジェクタ
US8891158B2 (en) * 2013-03-15 2014-11-18 Northrup Grumman Systems Corporation Distributed thermal system for nonlinear optical frequency conversion
US10218146B2 (en) * 2013-10-25 2019-02-26 Atla Lasers As Laser crystal
DE102021116391A1 (de) 2021-06-24 2022-12-29 Universität Stuttgart, Körperschaft Des Öffentlichen Rechts Strahlungsfeldbereitstellungsvorrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63280484A (ja) * 1987-05-12 1988-11-17 Matsushita Electric Ind Co Ltd 半導体装置
US5051617A (en) * 1990-06-29 1991-09-24 National Research Council Canada Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams
JP2721436B2 (ja) * 1990-11-07 1998-03-04 沖電気工業株式会社 第２高調波発生装置
JP2751656B2 (ja) * 1991-03-29 1998-05-18 日本電気株式会社 面発光型光第二高調波素子
JPH04307524A (ja) * 1991-04-04 1992-10-29 Seiko Epson Corp 第二高調波発生装置
JP3244529B2 (ja) * 1992-04-16 2002-01-07 アジレント・テクノロジーズ・インク 面発光型第２高調波生成素子

Also Published As

Publication number Publication date
EP0632553B1 (en) 1997-03-19
EP0632553A3 (ko) 1995-01-25
DE69402120T2 (de) 1997-06-26
JPH0730181A (ja) 1995-01-31
EP0632553A2 (en) 1995-01-04
DE69402120D1 (de) 1997-04-24

Similar Documents

Publication Publication Date Title
KR930022639A (ko) 면발광형 제2고조파 생성소자
JP4747841B2 (ja) 波長変換レーザ装置および画像表示装置
JP3013121B2 (ja) 光波長変換装置
JP2005521910A (ja) 非被覆ブリュースタ表面を用いてキャビティ内共振を増強した第４高調波の生成
KR950002136A (ko) 면 발광형 제 2 고조파 생성소자
US20060120415A1 (en) Blue laser beam oscillating method and system
KR980006669A (ko) 레이저 광 발생장치
US5422903A (en) Surface emitting second harmonic generating device
KR100863199B1 (ko) 고조파 빔 발생용 레이저 장치 및 방법
JP2004295088A (ja) 波長変換素子
JP4719918B2 (ja) レーザー光の波長変換法
KR950012951A (ko) 반도체 레이저 장치
JP3163566B2 (ja) ２次高調波発生デバイス
JPS61184890A (ja) 光学双安定装置
KR960032066A (ko) 제2고조파 발생 장치
JP4862960B2 (ja) 波長変換レーザ装置および画像表示装置
KR950010329A (ko) 제2고조파 발생 장치
JPH0714666U (ja) 固体レーザ装置
SU1602322A1 (ru) Кольцевой лазер
JPH1195269A (ja) レーザ光発生装置
KR970002421A (ko) 제2고조파 발생장치
JPS60101518A (ja) 音響光学装置
KR940009711A (ko) 광변환장치
JP2738155B2 (ja) 導波路型波長変換素子
JPH09197456A (ja) 紫外線用光学部品および波長変換素子ならびに紫外線光源

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid