KR940027200A - Structure of Solid State Imaging Device - Google Patents

Structure of Solid State Imaging Device Download PDF

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Publication number
KR940027200A
KR940027200A KR1019930008480A KR930008480A KR940027200A KR 940027200 A KR940027200 A KR 940027200A KR 1019930008480 A KR1019930008480 A KR 1019930008480A KR 930008480 A KR930008480 A KR 930008480A KR 940027200 A KR940027200 A KR 940027200A
Authority
KR
South Korea
Prior art keywords
well
conductive
vccd region
region
smear phenomenon
Prior art date
Application number
KR1019930008480A
Other languages
Korean (ko)
Inventor
윤지성
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019930008480A priority Critical patent/KR940027200A/en
Publication of KR940027200A publication Critical patent/KR940027200A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 소체촬상소자에 관한 것으로, 스미어(Smear)현상을 방지하기 위한 것에 관한 것이다. 종래에는 장파장의 빛이 입사되어 웰전하를 형성하고 이 웰전하가 VCCD영역으로 스며드는 스미어 현상이 발생하였다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a body image pickup device, and more particularly, to preventing smear phenomenon. Conventionally, a smear phenomenon occurs in which long-wavelength light is incident to form well charges and the well charges penetrate into the VCCD region.

본 발명은 이와같은 스미어 현상을 방지하기 위하여 웰과 VCCD영역 계면에 P+불순물층을 형성하여 웰전하가 VCCD영역으로 스며들지 못하도록 한 것이다.In order to prevent such a smear phenomenon, the present invention forms a P + impurity layer at the interface between the well and the VCCD region to prevent the well charge from penetrating into the VCCD region.

따라서, 스미어 현상이 방지되어 소자 특성이 향상된다.Therefore, smear phenomenon is prevented and device characteristics are improved.

Description

고체촬상소자의 구조Structure of Solid State Imaging Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도는 본 발명의 CCD 구조 단면도.2 is a cross-sectional view of a CCD structure of the present invention.

Claims (1)

제1도전형 웰(3)의 표면에 제 2도전형 VCCD영역(4)이 형성되고, VCCD영역(4)과 제1도전형 웰(3)계면에 고농도 제1도전형 불순물층(7)이 형성되고, VCCD영역(4) 일측의 제1도전형 웰(3) 표면에 제2도전형 포토다이오드영역(6)이 형성되고, VCCD영역(4) 상부에 절연막으로 격리되어 전하전송전극(5) 이 형성됨을 특징으로 하는 고체촬상소자의 구조.The second conductive VCCD region 4 is formed on the surface of the first conductive well 3, and the highly conductive first conductive impurity layer 7 is disposed on the interface between the VCCD region 4 and the first conductive well 3. Is formed, and a second conductive photodiode region 6 is formed on the surface of the first conductive well 3 on one side of the VCCD region 4, and is insulated with an insulating film on the VCCD region 4 to form a charge transfer electrode ( 5) The structure of the solid state image pickup device, characterized in that formed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930008480A 1993-05-18 1993-05-18 Structure of Solid State Imaging Device KR940027200A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930008480A KR940027200A (en) 1993-05-18 1993-05-18 Structure of Solid State Imaging Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930008480A KR940027200A (en) 1993-05-18 1993-05-18 Structure of Solid State Imaging Device

Publications (1)

Publication Number Publication Date
KR940027200A true KR940027200A (en) 1994-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930008480A KR940027200A (en) 1993-05-18 1993-05-18 Structure of Solid State Imaging Device

Country Status (1)

Country Link
KR (1) KR940027200A (en)

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