KR940023435U - Semiconductor memory data sensing circuit - Google Patents

Semiconductor memory data sensing circuit

Info

Publication number
KR940023435U
KR940023435U KR2019930003242U KR930003242U KR940023435U KR 940023435 U KR940023435 U KR 940023435U KR 2019930003242 U KR2019930003242 U KR 2019930003242U KR 930003242 U KR930003242 U KR 930003242U KR 940023435 U KR940023435 U KR 940023435U
Authority
KR
South Korea
Prior art keywords
semiconductor memory
sensing circuit
memory data
data sensing
circuit
Prior art date
Application number
KR2019930003242U
Other languages
Korean (ko)
Other versions
KR950006748Y1 (en
Inventor
곽덕영
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR2019930003242U priority Critical patent/KR950006748Y1/en
Publication of KR940023435U publication Critical patent/KR940023435U/en
Application granted granted Critical
Publication of KR950006748Y1 publication Critical patent/KR950006748Y1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
KR2019930003242U 1993-03-05 1993-03-05 Data sensing circuit of semiconductor memory KR950006748Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930003242U KR950006748Y1 (en) 1993-03-05 1993-03-05 Data sensing circuit of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930003242U KR950006748Y1 (en) 1993-03-05 1993-03-05 Data sensing circuit of semiconductor memory

Publications (2)

Publication Number Publication Date
KR940023435U true KR940023435U (en) 1994-10-22
KR950006748Y1 KR950006748Y1 (en) 1995-08-19

Family

ID=19351646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930003242U KR950006748Y1 (en) 1993-03-05 1993-03-05 Data sensing circuit of semiconductor memory

Country Status (1)

Country Link
KR (1) KR950006748Y1 (en)

Also Published As

Publication number Publication date
KR950006748Y1 (en) 1995-08-19

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