KR940022687A - Gold Alloys for Semiconductor Devices - Google Patents

Gold Alloys for Semiconductor Devices Download PDF

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Publication number
KR940022687A
KR940022687A KR1019940005746A KR19940005746A KR940022687A KR 940022687 A KR940022687 A KR 940022687A KR 1019940005746 A KR1019940005746 A KR 1019940005746A KR 19940005746 A KR19940005746 A KR 19940005746A KR 940022687 A KR940022687 A KR 940022687A
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gold
yttrium
ppm
weight
beryllium
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KR1019940005746A
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Korean (ko)
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KR0157474B1 (en
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겐지 모리
마사노리 도키다
다카노리 후쿠다
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고노 사토시
다츠다 덴센 가부시키가이샤
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Publication of KR0157474B1 publication Critical patent/KR0157474B1/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

본 발명은 반도체 소자용 금합금, 더 자세히는 주로 예컨대 반도체 소자상의 전극과 외부리드를 접합하기 위하여 사용하는 내열성이 뛰어난 본딩용 금선 등에 사용되기에 유리한 반도체 소자용 금합금에 관한 것이다.BACKGROUND OF THE INVENTION The present invention relates to gold alloys for semiconductor devices, and more particularly, to gold alloys for semiconductor devices, which are advantageously used for bonding gold wires having excellent heat resistance, for example, for bonding electrodes and external leads on semiconductor devices.

본 발명은 이트륨, 칼슘, 베릴륨, 납의 각 원소를 함유하여 이루어진 금합금에 있어서, 각각의 원소의 비율이 이트륨 : 칼슘 : 베릴륨 : 납=1 :0.5∼2.0 : 0.1∼1.0 : 0.1∼1.0의 범위 내에 있고, 또한 이트륨의 최소량이 5중량ppm이상이고, 각각의 원소의 총량이 80중량ppm 이하이고, 잔부가 불가피한 불순물과 금인 것을 특징으로 하는 반도체 소자용 금합금과 이트륨, 칼슘, 베릴륨, 납의 각 원소를 함유하여 이루어진 금합금에 있어서, 각각의 원소의 비율이 이트륨 : 칼슘 : 베릴륨 : 납=0.7∼1.5 : 0.2∼0.6 : 0.1∼0.5의 범위내에 있고, 또한 이트륨이 10∼30중량ppm이고, 각각의 원소의 총량이 20∼60중량ppm이고, 잔부가 불가피한 불순물과 금인 것을 특징으로 하는 반도체 소자용 금합금을 제공한다.The present invention is a gold alloy containing yttrium, calcium, beryllium and lead, wherein the ratio of each element is within the range of yttrium: calcium: beryllium: lead = 1: 0.5-2.0: 0.1-1.0: 0.1-1.0 The minimum amount of yttrium is 5 ppm by weight or more, the total amount of each element is 80 ppm by weight or less, and the remainder is an inevitable impurity and gold. In the alloy containing gold, the ratio of each element is in the range of yttrium: calcium: beryllium: lead = 0.7 to 1.5: 0.2 to 0.6: 0.1 to 0.5, and yttrium is 10 to 30 ppm by weight; The total amount of is 20 to 60 ppm by weight, the remainder is provided with a gold alloy for a semiconductor device, characterized in that the inevitable impurities and gold.

Description

반도체 소자용 금합금Gold Alloys for Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

이트륨, 칼슘, 베릴륨, 납의 각 원소를 함유하여 이루어진 금합금에 있어서, 각각의 원소의 비율이 이트륨 : 칼슘 : 베릴륨 : 납=1 : 0.5∼2.0 : 0.1∼1.0 : 0.1∼1.0의 범위내에 있고, 또한 이트륨의 최소량이 5중량ppm 이상이고, 각각의 원소의 총량이 80중량ppm 이하이고, 잔부가 불가피한 불순물과 금인 것을 특징으로 하는 반도체 소자용 금합금.In the gold alloy containing yttrium, calcium, beryllium and lead, the ratio of each element is in the range of yttrium: calcium: beryllium: lead = 1: 0.5 to 2.0: 0.1 to 1.0: 0.1 to 1.0, and A minimum amount of yttrium is 5 ppm by weight or more, the total amount of each element is 80 ppm by weight or less, and the remainder is an unavoidable impurity and gold. 이트륨, 칼슘, 베릴륨, 납의 각 원소를 함유하여 이루어진 금합금에 있어서, 각각의 원소의 비율이 이트륨 : 칼슘 : 베릴륨 : 납=1 : 0.7∼1.5 : 0.2∼0.6 : 0.1∼0.5의 범위내에 있고, 또한 이트륨이 10∼30중량ppm이고, 각각의 원소의 총량이 20∼60중량ppm이고, 잔부가 불가피한 불순물과 금인 것을 특징으로 하는 반도체 소자용 금합금.In the gold alloy containing yttrium, calcium, beryllium and lead, the ratio of each element is in the range of yttrium: calcium: beryllium: lead = 1: 0.7-1.5: 0.2-0.6: 0.1-0.5, and Yttrium is 10-30 weight ppm, the total amount of each element is 20-60 weight ppm, and remainder is an unavoidable impurity and gold, The gold alloy for semiconductor elements. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940005746A 1993-03-31 1994-03-22 Semiconductor element gold alloy KR0157474B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9888293 1993-03-31
JP93-98882 1993-03-31

Publications (2)

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KR940022687A true KR940022687A (en) 1994-10-21
KR0157474B1 KR0157474B1 (en) 1998-12-01

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KR1019940005746A KR0157474B1 (en) 1993-03-31 1994-03-22 Semiconductor element gold alloy

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KR (1) KR0157474B1 (en)
GB (1) GB2276632B (en)
SG (1) SG44578A1 (en)
TW (1) TW284791B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5945065A (en) * 1996-07-31 1999-08-31 Tanaka Denshi Kogyo Method for wedge bonding using a gold alloy wire

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TW284791B (en) 1996-09-01
KR0157474B1 (en) 1998-12-01
GB9405839D0 (en) 1994-05-11
GB2276632B (en) 1996-02-28
GB2276632A (en) 1994-10-05
SG44578A1 (en) 1997-12-19

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