KR940016981A - Ybco/laalo3/au구조의 3극 대역통과 여파기의 제조방법 - Google Patents
Ybco/laalo3/au구조의 3극 대역통과 여파기의 제조방법 Download PDFInfo
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- KR940016981A KR940016981A KR1019920025339A KR920025339A KR940016981A KR 940016981 A KR940016981 A KR 940016981A KR 1019920025339 A KR1019920025339 A KR 1019920025339A KR 920025339 A KR920025339 A KR 920025339A KR 940016981 A KR940016981 A KR 940016981A
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- South Korea
- Prior art keywords
- frequency
- circuit pattern
- bandpass filter
- manufacturing
- temperature superconducting
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims 4
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 title 1
- 238000000608 laser ablation Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract 6
- 229910052751 metal Inorganic materials 0.000 claims abstract 6
- 239000002887 superconductor Substances 0.000 claims abstract 4
- 238000007493 shaping process Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 238000004549 pulsed laser deposition Methods 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 101000661807 Homo sapiens Suppressor of tumorigenicity 14 protein Proteins 0.000 abstract 1
- 101000661808 Mus musculus Suppressor of tumorigenicity 14 protein homolog Proteins 0.000 abstract 1
- 102100037942 Suppressor of tumorigenicity 14 protein Human genes 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000004891 communication Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000010295 mobile communication Methods 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
본 발명은 이동통신 및 위성통신용 고주파 수동소자의 한 종류로서, 고온초전도 에피박막을 이용하여 개발한 고주파용(-10㎓) 고온초전도 3극 대역통과 여파기(YBa2Cu3O7-x/LaAlO3/Au구조)에 관한 것으로, 소자의 회로패턴을 제작하기에 앞서 시뮬레이터(模擬實驗)으로 최적회로패턴을 설계하며, 고온 초전도 박막의 습식식각에 의한 초전도성의 열화를 최소화하기 위해, 펄스레이저증착(pulsed laser deposition 또는 laser ablation)법을 응용한 금속마스크 형상화공정(laser ablation aided mask-patterning process)으로 유전체 단결정 LaAlO3기판(8) 위에 최적설계된 여파기 회로패턴을 직접형상화한후, 자체제작한 고주파 하우징(microwave housing 또는 jig)를 이용하여 이 소자의 고주파 특성을 측정함으로써 고온초전도체의 고주파 응용가능성을 타진하고 기존의 금속제(금,구리등) 고주파수소자보다 성능이 우수한가를 살펴보았는바, 실제로 고온초전도체의 임계온도 이하에서는 금속박막형 소자보다 훨씬 우수한 고주파 특성을 보여 주었다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따라 고온초전도 회로패턴을 기판위에 증착하기 위한 "레이저 애블레이션을 응용한 금속 마이크 형상화공정(laser ablation aided mctal-patterning process)"에 대한 개략도, 제 2 도는 고온 초전도 단결정 박막을 이용하여 제작된 Y-Ba-Cu-OLaAlO3/Au구조의 3극-대역통과 여파기의 단면도, 제 3 도는 대역통과 여파기의 회로패턴만을 강조하기 위해 나타낸 평면도.
Claims (4)
- 대역통과 여파기를 제조하는 방법에 있어서, 레이저 애블레이션에 의해 형상화된 금속마스크(1)를 사용하여 단결정기판(7) 위에 회로패턴(6')을 형성하는 단계와, 상기 단결정기판(7)의 하부표면에 전도성 금속으로 접지평면(8)을 형성하는 단계와, 산소분위기에서 열처리하여 오옴콘택을 형성하는 단계를 포함하는 것을 특징으로 하는 3대 대역통과 여파기의 제조방법.
- 제 1 항에 있어서, 상기 금속마스크(1)의 앞면과 뒷면중 어느 하나에는 초전도체 물질이 도포된 것을 특징으로 하는 3극 대역통과 여파기의 제조방법.
- 제 2 항에 있어서, 상기 초전도체 물질은 YBa2Cu3O7-x인 것을 특징으로 하는 3극 대역통과 여파기의 제조방법.
- 제 1 항에 있어서, 상기 금속마스크(1)의 형상화 단계는 히터가 부착된 홀더에 스테인레스판을 은 접착제에 의해 접착시키고 상기 홀더의 온도를 800℃로 올리면서 패턴을 형성하는 것을 특징으로 하는 3대 대역통과 여파기의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920025339A KR950009636B1 (ko) | 1992-12-24 | 1992-12-24 | YBCO/LaAlO_3/Au 구조의 3극 대역통과 여파기의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920025339A KR950009636B1 (ko) | 1992-12-24 | 1992-12-24 | YBCO/LaAlO_3/Au 구조의 3극 대역통과 여파기의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940016981A true KR940016981A (ko) | 1994-07-25 |
| KR950009636B1 KR950009636B1 (ko) | 1995-08-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920025339A KR950009636B1 (ko) | 1992-12-24 | 1992-12-24 | YBCO/LaAlO_3/Au 구조의 3극 대역통과 여파기의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950009636B1 (ko) |
-
1992
- 1992-12-24 KR KR1019920025339A patent/KR950009636B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950009636B1 (ko) | 1995-08-25 |
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| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 19980616 Year of fee payment: 4 |
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| LAPS | Lapse due to unpaid annual fee |