KR940016756A - On-chip high voltage generator of semiconductor device - Google Patents

On-chip high voltage generator of semiconductor device Download PDF

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Publication number
KR940016756A
KR940016756A KR1019920025884A KR920025884A KR940016756A KR 940016756 A KR940016756 A KR 940016756A KR 1019920025884 A KR1019920025884 A KR 1019920025884A KR 920025884 A KR920025884 A KR 920025884A KR 940016756 A KR940016756 A KR 940016756A
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KR
South Korea
Prior art keywords
high voltage
level
charge
level detector
voltage
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Application number
KR1019920025884A
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Korean (ko)
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KR950008243B1 (en
Inventor
김영희
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김주용
현대전자산업 주식회사
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Priority to KR1019920025884A priority Critical patent/KR950008243B1/en
Publication of KR940016756A publication Critical patent/KR940016756A/en
Application granted granted Critical
Publication of KR950008243B1 publication Critical patent/KR950008243B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

반도체 소자의 온-칩 고전압 발생기에서, 외부전압(Vcc)이 높아지는 경우 전하 저장기의 게이트 산화막에 높은 전계가 걸려 게이트 산화학 브레이크 다운 특성이 취약하게 되는 문제를 극복하기 위해, VCC레벨 검출기(40)를 이용하여 VCC레벨 검출 전압 이상의 VCC전압에서는 고전압 레벨 검출기(31)가 낮은 VPP레벨에서 검출을 하게 함으로써, 높은 VCC전압에서 상대적으로 VPP전압을 감소시켜준다.On the semiconductor device from the chip high voltage generator, when the external voltage (V cc) increased to overcome the problem that a high electric field in the gate oxide of the group charge storage hanging gate weak acid chemical breakdown characteristic, V CC level detector By using 40, the high voltage level detector 31 detects at a low V PP level at a V CC voltage above the V CC level detection voltage, thereby reducing the V PP voltage relatively at a high V CC voltage.

Description

반도체 소자의 온-칩 고전압 발생기On-chip high voltage generator of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명에 따른 온-칩 고전압 발생기의 블럭도, 제 3 도는 본 발명에 따른 VCC레벨 검출기의 간략한 회로도, 제 4 도는 본 발명에 고전압 레벨 검출기의 간략한 회로도.2 is a block diagram of an on-chip high voltage generator according to the present invention, FIG. 3 is a simplified circuit diagram of a V CC level detector according to the present invention, and FIG. 4 is a simplified circuit diagram of a high voltage level detector according to the present invention.

Claims (2)

고전압 레벨이 원하는 타겟값보다 낮은 경우 전하 펌핑을 하도록 진동신호를 발생시키는 링 발진기(10)와, 링 발진기(10)가 발진할때마다 전하 펌핑 동작에 의해 전하를 공급하는 전하 펌핑 회로(20)와, 외부전압(Vcc) 레벨을 검출하여 VCC가 일정한 전압 이상일때 하이 상태의 출력신호 VCCH를 발생시키는 VCC레벨 검출기(40)와, 전하 펌핑 회로(20)의 출력 VPP및 VCC레벨 검출기(40)의 출력 VCCH을 입력으로 받아 VPP레벨 검출을 수행하는 고전압 레벨 검출기(31)와, 워드라인이 턴온될때 전하 공유에 의해 VPP레벨이 크게 감소되는 것을 방지하기 위한 전하 저장기 CRI을 포함하는 반도체 소자의 온-칩 고전압 발생기.A ring oscillator 10 for generating a vibration signal to charge charge when the high voltage level is lower than a desired target value, and a charge pumping circuit 20 for supplying charges by a charge pumping operation whenever the ring oscillator 10 oscillates And a V CC level detector 40 which detects an external voltage (V cc ) level and generates an output signal V CCH in a high state when V CC is above a certain voltage, and the outputs V PP and V of the charge pumping circuit 20. A high voltage level detector 31 that receives the output V CCH of the CC level detector 40 as an input and performs V PP level detection, and a charge to prevent the V PP level from being greatly reduced by charge sharing when the word line is turned on. An on-chip high voltage generator of a semiconductor device comprising a reservoir CRI. 제 1 항에 있어서, 상기 고전압 레벨 검출기(31)는 상기 VCC레벨 검출기(40)의 출력신호VCCH가 하이상태로 될때 턴 오프되는 PMOS 트랜지스터 MP3를 구비하는 반도체 소자의 온-칩 고전압 발생기.2. The on-chip high voltage generator of claim 1, wherein the high voltage level detector (31) includes a PMOS transistor MP3 that is turned off when the output signal V CCH of the V CC level detector (40) becomes high. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920025884A 1992-12-28 1992-12-28 High voltage generator of semiconductor device KR950008243B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920025884A KR950008243B1 (en) 1992-12-28 1992-12-28 High voltage generator of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920025884A KR950008243B1 (en) 1992-12-28 1992-12-28 High voltage generator of semiconductor device

Publications (2)

Publication Number Publication Date
KR940016756A true KR940016756A (en) 1994-07-25
KR950008243B1 KR950008243B1 (en) 1995-07-26

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Application Number Title Priority Date Filing Date
KR1019920025884A KR950008243B1 (en) 1992-12-28 1992-12-28 High voltage generator of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100680477B1 (en) * 2005-03-29 2007-02-08 매그나칩 반도체 유한회사 A oscillator using charge-sharing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100680477B1 (en) * 2005-03-29 2007-02-08 매그나칩 반도체 유한회사 A oscillator using charge-sharing

Also Published As

Publication number Publication date
KR950008243B1 (en) 1995-07-26

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