KR940016705A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
KR940016705A
KR940016705A KR1019920024127A KR920024127A KR940016705A KR 940016705 A KR940016705 A KR 940016705A KR 1019920024127 A KR1019920024127 A KR 1019920024127A KR 920024127 A KR920024127 A KR 920024127A KR 940016705 A KR940016705 A KR 940016705A
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KR
South Korea
Prior art keywords
semiconductor device
heat slug
heat
package
slug
Prior art date
Application number
KR1019920024127A
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Korean (ko)
Inventor
최종곤
임민빈
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019920024127A priority Critical patent/KR940016705A/en
Publication of KR940016705A publication Critical patent/KR940016705A/en

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Abstract

본 발명은 반도체장치에 관한 것으로, 특히 표면실장용 반도체칩을 장착할 수 있는 수지봉합형 패키지에 있어서, 리드프레임과 히트슬러그를 리벳이나 접착제를 이용하여 결합시킴으로써 일체화시키는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a resin-sealed package in which a surface mount semiconductor chip can be mounted, wherein the lead frame and the heat slug are integrated by using a rivet or an adhesive.

따라서 상기한 본 발명의 반도체 패키지에 의하면 히트슬러그 자체가 다이패드 및 방열판의 역할을 동시에 함으로써 반도체칩에서 발생되는 열이 수지에 의한 방열차단의 간섭이 없어 상기 히트슬러그를 통해 패키지 외부로 직접 열이 전달됨에 따라 자체적으로 약 50% 정도의 열저항 감소가 가능하며, 외부로 돌출된 히트싱크에는 반도체칩의 방열 정도에 따라 외부방열판의 부착이 가능함으로써 반도체칩의 효율을 극대화할 수 있다.Therefore, according to the semiconductor package of the present invention, the heat slug itself acts as a die pad and a heat sink at the same time, so that heat generated from the semiconductor chip does not interfere with heat radiation blocking by the resin, and thus heat is directly transferred to the outside of the package through the heat slug. As it is transmitted, the thermal resistance can be reduced by about 50% by itself, and the external heat sink can be attached to the heat sink that protrudes to the outside, thereby maximizing the efficiency of the semiconductor chip.

또, 히트슬러그를 다이패드로 이용하므로 몰드공정시 히트슬러그를 수작업으로 금형에 로딩할 필요가 없이 자동화가 가능하므로 패키지의 제조방법이 간단하여 제조비용이 저렴하고 신뢰성 및 수율이 높은 패키지를 제작할 수 있다.In addition, since the heat slug is used as a die pad, it is possible to automate the heat slug without the need to load it into the mold by hand during the mold process, so that the manufacturing method of the package is simple, so that the package can be manufactured at low cost and with high reliability and yield. have.

Description

반도체장치Semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명의 SMD패키지의 단면도를 도시하고, 제 8 도 내지 제10도에는 본 발명의 상기 SMD패키지의 히트슬러그와 리드프레임의 결합방법의 다른 실시예를 도시하고 있다.3 shows a cross-sectional view of the SMD package of the present invention, and FIGS. 8 to 10 show another embodiment of a method of combining the heat slug and lead frame of the SMD package of the present invention.

Claims (11)

패키지의 방열기능을 향상시키기 위하여 상기 다이패드가 없는 리드프레임과 히트슬러그가 접착제로 부착되어 일체화되고, 반도체칩이 탑재될 다이패드부의 캐비티에 노출된 히트슬러그 상에 반도체칩이 탑재되어 와이어본딩 및 수지봉합되어 패키지의 하면에 상기 히트슬러그의 하면이 노출되어 있는 것을 특징으로 하는 반도체장치.In order to improve the heat dissipation function of the package, the lead frame without the die pad and the heat slug are integrally attached with an adhesive, and the semiconductor chip is mounted on the heat slug exposed to the cavity of the die pad portion where the semiconductor chip is to be mounted. And a bottom surface of the heat slug is exposed on the bottom surface of the resin-sealed package. 제 1 항에 있어서, 상기 접착제는 폴리이미드 양면 테이프인 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 1, wherein said adhesive is a polyimide double-sided tape. 제 1 항에 있어서, 상기 리드프레임 하면은 절연처리된 것을 특징으로 하는 반도체장치.The semiconductor device of claim 1, wherein a lower surface of the lead frame is insulated. 제 1 항에 있어서, 상기 히트슬러그 표면은 절연처리된 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 1, wherein said heat slug surface is insulated. 제 3 항 또는 제 4 항의 어느 한 항에 있어서, 상기 절연처리에 양극산화가 이용되거나 폴리이미드가 도포된 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 3 or 4, wherein anodization or polyimide is applied to the insulation treatment. 제 1 항에 있어서, 상기 히트슬러그의 양측면으로부터 하면으로 다단의 단차를 두어 침수가 방지되는 것을 특징으로 하는 반도체장치.2. The semiconductor device according to claim 1, wherein the semiconductor device is prevented from being flooded by providing a multi-stage step from both side surfaces of the heat slug to a lower surface. 제 6 항에 있어서, 상기 히트슬러그는 금속, 또는 금속합금의 어느 하나를 선택 사용하여 형성된 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 6, wherein the heat slug is formed by using any one of a metal and a metal alloy. 패키지의 방열기능을 향상기키기 위하여 다이패드가 없는 리드프레임의 타이바에 엠보싱홀, 히트슬러그에는 엠보싱이 구비되어 상호 결합되고, 반도체칩이 탑재될 다이패드부의 캐비티에 노출된 히트슬러그 상에 반도체칩이 직접 탑재되어 와이어본딩 및 수지봉합되어 패키지의 하면에 상기 히트슬러그의 하면이 노출되어 있는 것을 특징으로 하는 반도체장치.In order to improve the heat dissipation function of the package, an embossing hole is provided on the tie bar of the lead frame without a die pad, and an embossing is provided on the heat slug, and the semiconductor chip is placed on the heat slug exposed to the cavity of the die pad portion where the semiconductor chip is to be mounted. And the bottom surface of the heat slug is exposed on the bottom surface of the package by directly mounting the wire bonding and resin sealing. 제 8 항에 있어서, 상기 리드프레임 하면은 절연처리된 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 8, wherein the lower surface of the lead frame is insulated. 제 8 항에 있어서, 상기 히트슬러그 표면은 절연처리된 것을 특징으로 하는 반도체장치.9. The semiconductor device according to claim 8, wherein said heat slug surface is insulated. 제10항에 있어서, 상기 히트슬러그의 양측면으로부터 하면으로 다단의 단차를 두어 침수가 방지되는 것을 특징으로 하는 반도체장치.The semiconductor device according to claim 10, wherein the semiconductor device is prevented from flooding by providing a multi-stage step from both side surfaces of the heat slug to a lower surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920024127A 1992-12-14 1992-12-14 Semiconductor device KR940016705A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920024127A KR940016705A (en) 1992-12-14 1992-12-14 Semiconductor device

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KR1019920024127A KR940016705A (en) 1992-12-14 1992-12-14 Semiconductor device

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KR940016705A true KR940016705A (en) 1994-07-23

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100263514B1 (en) * 1996-06-28 2000-08-01 고토 하지메 Resin capsulated semiconductor device having heat sink and method of fabricating the same
KR20000051980A (en) * 1999-01-28 2000-08-16 유-행 치아오 Lead frame with heat slug
KR100453693B1 (en) * 1996-12-30 2005-01-31 앰코 테크놀로지 코리아 주식회사 Crack structure of oxide layer of heat spreader for semiconductor package and fabricating method thereof to improve cohesion of package molding of compound material and prevent electrical circuit from being short-circuited
KR100548012B1 (en) * 1998-09-17 2006-04-21 삼성테크윈 주식회사 Semiconductor package

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100263514B1 (en) * 1996-06-28 2000-08-01 고토 하지메 Resin capsulated semiconductor device having heat sink and method of fabricating the same
KR100263513B1 (en) * 1996-06-28 2000-08-01 고토 하지메 Resin capsulated semiconductor device having heat sink and method of fabricating the same
KR100453693B1 (en) * 1996-12-30 2005-01-31 앰코 테크놀로지 코리아 주식회사 Crack structure of oxide layer of heat spreader for semiconductor package and fabricating method thereof to improve cohesion of package molding of compound material and prevent electrical circuit from being short-circuited
KR100548012B1 (en) * 1998-09-17 2006-04-21 삼성테크윈 주식회사 Semiconductor package
KR20000051980A (en) * 1999-01-28 2000-08-16 유-행 치아오 Lead frame with heat slug

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