KR940016463A - Semiconductor integrated circuit device and manufacturing method - Google Patents

Abstract

A semiconductor integrated circuit device and a method for manufacturing the same, comprising: a support substrate made of silicon, a thin silicon layer formed on a support substrate via a first silicon oxide film, to prevent or prevent intrusion into a device formation region of a cation; Split grooves formed in the depth direction on the main surface side of the silicon layer and reaching the first silicon oxide film and dividing the silicon layer into semiconductor island regions of the trade, second silicon oxide films formed on the surface of the divided grooves or in the separator substrate, And a plurality of semiconductor active elements provided on the main surface of the semiconductor island region of the semiconductor device, and cation diffusion preventing means provided on at least part of the oxide film path formed by the first silicon oxide film and the second silicon oxide film.

By using such an apparatus and method, it is possible to prevent cations from entering the device formation region.

Description

Semiconductor integrated circuit device and manufacturing method

Since this is an open matter, no full text was included.

1 is a cross-sectional view of an essential part of a semiconductor integrated circuit device to which the present invention is applied, and FIG. 2 is a view showing a state in which the semiconductor integrated circuit device of FIG. 1 is embedded on a package board. 13 shows, in process order, the process for manufacturing the semiconductor integrated circuit device of FIG.

Claims (25)

A semiconductor substrate, a first silicon oxide film on the surface of the semiconductor substrate, a semiconductor layer on the surface of the first silicon oxide film, and extending from the surface of the semiconductor layer to the surface of the first silicon oxide film to extend the semiconductor layer into a plurality of semiconductor regions. A semiconductor comprising a groove separated by a semiconductor layer, a second silicon oxide film on the side surface of the groove, a semiconductor element formed on a main surface of the plurality of semiconductor island regions, and a silicon nitride film formed between the first silicon oxide film and the second silicon oxide film. Integrated circuit device. The semiconductor integrated circuit device according to claim 1, wherein said silicon nitride film covers the entire surface of said first silicon oxide film. The semiconductor integrated circuit device according to claim 1, wherein each of the semiconductor substrate and the semiconductor layer is single crystal silicon. 2. The semiconductor integrated circuit device according to claim 1, wherein said groove together with said second silicon oxide film forms an isolation structure that isolates each of said plurality of semiconductor elements. 5. The semiconductor integrated circuit device according to claim 4, wherein said plurality of semiconductor devices comprise MOSFETs. A semiconductor substrate, a first silicon oxide film on the surface of the semiconductor substrate, a semiconductor layer on the surface of the first silicon oxide film, and extending from the surface of the semiconductor layer to the surface of the first silicon oxide film to extend the semiconductor layer into a plurality of semiconductor island regions. And a semiconductor device formed on a main surface of the plurality of semiconductor island regions and a second silicon oxide film on the side of the groove, wherein the groove together with the second silicon oxide film includes the plurality of semiconductor devices. And the groove together with the second silicon oxide film form an isolation structure for isolating each of the plurality of semiconductor devices, wherein the first silicon oxide film under the isolation structure is doped with phosphorus. 7. The semiconductor integrated circuit device according to claim 6, wherein the first silicon oxide film is entirely doped with phosphorus. 7. The semiconductor integrated circuit device according to claim 6, wherein each of the semiconductor substrate and the semiconductor layer is single crystal silicon. 7. The semiconductor integrated circuit device according to claim 6, wherein said plurality of semiconductor devices comprise MOSFETs. A semiconductor substrate, a first silicon oxide film on the surface of the semiconductor substrate, a semiconductor layer on the surface of the first silicon oxide film, and extending from the surface of the semiconductor layer to the surface of the first silicon oxide film to extend the semiconductor layer into a plurality of semiconductor islands. A polysilicon doped with a region, a second silicon oxide film on the side of the groove, polycrystalline silicon doped with phosphorus and filled in the groove, and a semiconductor element formed on a main surface of the plurality of semiconductor island regions, wherein the polycrystalline silicon and the And the groove together with the second silicon oxide film form an isolation structure that isolates each of the plurality of semiconductor devices. The semiconductor integrated circuit device according to claim 10, wherein each of the semiconductor substrate and the semiconductor layer is single crystal silicon. The semiconductor integrated circuit device according to claim 10, wherein the plurality of semiconductor devices comprise MOSFETs. A semiconductor substrate, a first silicon oxide film on the surface of the semiconductor substrate, a semiconductor layer on the surface of the first silicon oxide film, and formed on an outer circumference of the semiconductor layer so as to surround the first region of the semiconductor layer in plan view; A first groove extending from the surface of the semiconductor layer to the first silicon oxide film, the first region of the semiconductor layer, extending from the surface of the semiconductor layer to the surface of the first silicon oxide film, A second groove that separates the first region into a plurality of semiconductor island regions, a second silicon oxide film on the side surface of the groove, and a semiconductor element formed on a main surface of the plurality of semiconductor island regions, together with the second silicon oxide film. The groove forms an isolation structure that insulates each of the plurality of semiconductor elements, and the first structure is located below the isolation structure. The silicon oxide film is doped with a semiconductor integrated circuit device. The semiconductor integrated circuit device according to claim 13, wherein the first silicon oxide film is entirely doped with phosphorus. The semiconductor integrated circuit device according to claim 13, wherein each of the semiconductor substrate and the semiconductor layer is single crystal silicon. The semiconductor integrated circuit device according to claim 13, wherein the plurality of semiconductor devices comprise MOSFETs. The semiconductor integrated circuit device of claim 1, wherein the plurality of semiconductor devices comprise bipolar transistors. 7. The semiconductor integrated circuit device according to claim 6, wherein the plurality of semiconductor devices comprise bipolar transistors. The semiconductor integrated circuit device of claim 10, wherein the plurality of semiconductor devices comprise bipolar transistors. The semiconductor integrated circuit device of claim 13, wherein the plurality of semiconductor devices comprise bipolar transistors. The semiconductor integrated circuit device of claim 1, wherein the plurality of semiconductor devices include a MOSFET and a bipolar transistor. 7. The semiconductor integrated circuit device according to claim 6, wherein the plurality of semiconductor devices comprise MOSFETs and bipolar transistors. 11. The semiconductor integrated circuit device according to claim 10, wherein the plurality of semiconductor devices comprise MOSFETs and bipolar transistors. The semiconductor integrated circuit device of claim 13, wherein the plurality of semiconductor devices comprise MOSFETs and bipolar transistors. Preparing a semiconductor body having a semiconductor substrate, a first silicon oxide film on the surface of the semiconductor substrate, a silicon nitride film on the surface of the first silicon oxide film, and a semiconductor layer on the surface of the silicon nitride film; Forming a groove extending from the surface of the semiconductor layer to the surface of the first silicon oxide film to be separated into an island region, forming a second silicon oxide film on the side surface of the groove and the plurality of semiconductor island regions. A method for manufacturing a semiconductor integrated circuit device, comprising the step of forming a semiconductor element on a main surface of the same. ※ Note: The disclosure is based on the initial application.