KR940011696B1 - Dielectric composite for compensating the temperature - Google Patents
Dielectric composite for compensating the temperature Download PDFInfo
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- KR940011696B1 KR940011696B1 KR1019900005998A KR900005998A KR940011696B1 KR 940011696 B1 KR940011696 B1 KR 940011696B1 KR 1019900005998 A KR1019900005998 A KR 1019900005998A KR 900005998 A KR900005998 A KR 900005998A KR 940011696 B1 KR940011696 B1 KR 940011696B1
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- temperature
- dielectric constant
- composition
- temperature coefficient
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- 239000002131 composite material Substances 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 16
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 5
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052763 palladium Inorganic materials 0.000 abstract description 4
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 abstract 1
- 239000003985 ceramic capacitor Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
본 발명은 산화티탄산바륨(BaTiO3), 산화티탄(TiO2), 산화니오디늄(Nd2O3), 산화란탄(La2O3) 및 산화지르코늄(ZrO2)의 성분으로 구성되는 온도 보상용 자기 유전체 조성물에 관한 것으로, 비유전율을 높이고, 유전손실(1/Q)을 작게하고 온도계수를 ±30ppm/℃이내로 하며 EIA 규격의 COG 특성을 만족시킬 수 있는 자기 유전체 조성물에 관한 것이다.The present invention is a temperature composed of the components of barium titanate (BaTiO 3 ), titanium oxide (TiO 2 ), nidionium oxide (Nd 2 O 3 ), lanthanum oxide (La 2 O 3 ) and zirconium oxide (ZrO 2 ) The present invention relates to a compensating magnetic dielectric composition, which has a high dielectric constant, a low dielectric loss (1 / Q), a temperature coefficient of less than ± 30 ppm / ° C, and a magnetic dielectric composition capable of satisfying the COG characteristics of the EIA standard.
상기 온도 보상용 자기 유전체 조성물은 현재 적층 세라믹 콘덴서의 재료로 사용되며 칼라 TV, 카폰등의 전자기기 회로에서 온도 보상용 콘덴서로 이용되고 있다.The magnetic dielectric composition for temperature compensation is currently used as a material for multilayer ceramic capacitors and is used as a temperature compensation capacitor in electronic circuits such as color TVs and car phones.
한편, 적층 세라믹 콘덴서의 제조시 내부전극의 소부온도와 소지의 소결온도가 같아야 하는데 본 발명은 100% Pd(팔라듐) 전극의 소부온도인 1300~1330℃의 범위내에서 소결이 가능하게 하였다.Meanwhile, when the multilayer ceramic capacitor is manufactured, the baking temperature of the internal electrode and the sintering temperature of the substrate should be the same, but the present invention enables sintering within the range of 1300-1330 ° C., which is the baking temperature of the 100% Pd (palladium) electrode.
온도 보상용 자기 콘덴서의 재료로서 SrTiO3, CaTiO3, MgTiO3, CaZrO3등을 주성분으로 하는 조성물이 종래부터 사용되어져 왔으나 이들의 재료는 유전율이 16~30 정도로 낮았다. 한편 일본특허공고 소59-3008호에서는 유전율의 온도계수가 높고 유전율도 27~48 정도로 낮게 나타났으며, 또 일본특허공고 소59-35125호, 60-49152호에서는 유전율의 온도계수가 상당히 낮아졌으나, 유전율이 16~21로 낮았다.As a material for the magnetic capacitor for temperature compensation, compositions mainly composed of SrTiO 3 , CaTiO 3 , MgTiO 3 , CaZrO 3 , and the like have been conventionally used, but these materials have low dielectric constants of about 16 to 30. In Japanese Patent Publication No. 59-3008, the dielectric constant was high and the dielectric constant was 27-48, and in Japanese Patent Publication Nos. 59-35125 and 60-49152, the dielectric constant was significantly lower. This was as low as 16-21.
그리고 소결온도가 1400~1500℃로 높게 나타났다.And sintering temperature was high as 1400 ~ 1500 ℃.
그리고 일본특허공고 소59-18805호에서는 유전율도 높고 온도계수도 만족시키고 있으나 소결온도가 1360℃ 이상으로 높게 나타났다. 일본특허공고 소58-48964도에서도 마찬가지 결과로 나타났다.In Japanese Patent Publication No. 59-18805, the dielectric constant was high and the temperature coefficient was satisfied, but the sintering temperature was higher than 1360 ℃. The same result was found in Japanese Patent Publication No. 58-48964.
따라서, 이러한 조성물로 적층 세라믹 콘덴서를 제작하게 되면 100% Pd 전극을 사용할 경우 소부온도가 맞지 않게 된다. 또한 동일크기에서 유전율이 낮아 내부전극의 층수가 많아지게 되어 경박단소화하기도 힘들고 원가절감도 할 수 없게 된다.Therefore, when the multilayer ceramic capacitor is manufactured with such a composition, the baking temperature does not match when the 100% Pd electrode is used. In addition, since the dielectric constant is low at the same size, the number of layers of the internal electrode increases, making it difficult to reduce the thickness and cost and to reduce the cost.
따라서, 본 발명에서는 상술한 문제점을 해결할 수 있는 자기 유전체 조성물을 제공하는데 그 목적이 있는 것으로, 본 발명의 조성물은 BaTiO39~10wt%, TiO230~33wt%, Nd2O337~51wt%, La2O310~20wt% 및 ZrO21.0~3.0wt%로 구성된다.Accordingly, the present invention has a purpose to provide a magnetic dielectric composition that can solve the above problems, the composition of the present invention is BaTiO 3 9 ~ 10wt%, TiO 2 30 ~ 33wt%, Nd 2 O 3 37 ~ 51wt %, La 2 O 3 10 ~ 20wt% and ZrO 2 1.0 ~ 3.0wt%.
상기 조성물에 있어서 조성을 한정한 이유는 다음과 같다.The reason for limiting the composition in the composition is as follows.
(1) BaTiO3가 8wt% 이하에서는 유전율이 62보다 낮으며 온도계수가 -78ppm/℃로 OCG특성을 벗어나며, 11wt% 이상에서는 Q값이 2000보다 낮으며 온도계수도 -82ppm/℃로 벗어난다.(1) When BaTiO 3 is less than 8wt%, the dielectric constant is lower than 62, and the temperature coefficient is -78ppm / ℃, which is out of OCG characteristics. Above 11wt%, the Q value is lower than 2000 and the temperature coefficient is -82ppm / ℃.
(2) TiO2가 29wt% 이하에서는 Q값이 낮고 온도계수도 -44ppm/℃로 벗어나며, 소결온도도 1360℃로 높으며 34wt% 이상에서는 유전율이 60보다 낮으며 온도계수도 -66ppm/℃로 벗어나 있다.(2) When TiO 2 is below 29wt%, Q value is low and the temperature coefficient is -44ppm / ℃, and the sintering temperature is high as 1360 ℃, and above 34wt%, dielectric constant is lower than 60 and temperature coefficient is -66ppm / ℃.
(3) Nd2O3가 36wt% 이하에서는 유전율이 낮고 온도계수가 벗어나 있으며 52wt% 이상에서는 Q값 및 온도계수가 벗어나 있다.(3) When Nd 2 O 3 is less than 36wt%, the dielectric constant is low and the temperature coefficient is out, and above 52wt%, the Q value and the temperature coefficient are out.
(4) La2O3가 11wt% 이하 23wt% 이상에서는 온도계수가 벗어나 있다.(4) The temperature coefficient is out of La 2 O 3 11 wt% or less and 23 wt% or more.
(5) ZrO2가 0.5wt% 이하 3.5wt% 이상에서는 온도계수가 벗어나 있고 Q값이 낮다.(5) When ZrO 2 is 0.5wt% or less and 3.5wt% or more, the temperature coefficient is out and the Q value is low.
이상과 같이 제조된 본 발명의 조성물의 작용효과는 다음과 같다.Effects of the composition of the present invention prepared as described above are as follows.
(1) 적층 세라믹 콘덴서 제조시 종래의 조성물은 소결온도가 높아 Pt, Au 등의 귀금속을 내부전극으로 사용하였는데 본 발명은 소결온도를 저하시켜 Pt, Au보다 가격이 싼 Pd를 사용할 수 있게 했다.(1) In the manufacture of the multilayer ceramic capacitor, the conventional composition used a noble metal such as Pt and Au as an internal electrode due to its high sintering temperature. However, the present invention lowers the sintering temperature so that Pd which is cheaper than Pt and Au can be used.
(2) 적층 세라믹 콘덴서 제조시 종래의 조성물보다 유전율이 높아 내부전극의 층수를 적게할 수 있고, 따라서 경박단소화 할 수 있다.(2) When manufacturing a multilayer ceramic capacitor, the dielectric constant is higher than that of the conventional composition, so that the number of layers of the internal electrode can be reduced, thus making it light and short.
(3) 종래의 조성물보다 소결온도가 낮아 연료비 절감 즉, 원가절감에도 기여할 수 있다.(3) The sintering temperature is lower than that of the conventional composition, which may contribute to fuel cost reduction, that is, cost reduction.
이하 실시예 및 비교실시예를 통해 본 발명의 제조방법 및 그 작용효과에 대해 구체적으로 설명한다. 그러나, 다음의 예가 본 발명의 범주를 한정하는 것은 아니다.Hereinafter, the preparation method and the effect of the present invention will be described in detail through Examples and Comparative Examples. However, the following examples do not limit the scope of the present invention.
실시예 및 비교실시예Examples and Comparative Examples
99% 이상의 순도를 갖는 티탄산바륨(BaTiO3), 산화티탄(TiO2), 산화니오디늄(Nd2O3), 산화란탄(La2O3) 및 산화지르코늄(ZrO2)을 하기 표1과 같이 조합한 뒤, 비닐자(Jar)와 지르코니아 볼(ZrO2-Ball)을 이용하여 플레니터리 밀로 혼합하였다. 이때의 분산매로는 증류수를 사용하였으며 잘 혼합된 슬러리는 건조후 조성에 따라 1050~1150℃에서 4시간 하소하고, 이를 다시 적절한 입도를 가지도록 분쇄하였다. 이렇게 얻어진 분말을 건식프레스로 직경 12mm의 원판형태로 1000kg/cm2의 압력을 가해 성형하였다. 성형된 시편은 1300~1330℃로 소결한 후 얻어진 소결체의 양면에 은(Ag) 페이스트를 발라 800℃에서 10분간 유지시켜 부착시켰다. 그후 YHP사 4275A의 LCR meter를 사용하여 25℃, 1MHz에서 유전율(εr) 및 유전손실(tanδ=1/Q)값을 측정하였다. 그 결과를 표 1에 나타내었다.Barium titanate (BaTiO 3 ), titanium oxide (TiO 2 ), niobium oxide (Nd 2 O 3 ), lanthanum oxide (La 2 O 3 ) and zirconium oxide (ZrO 2 ) having a purity of 99% or more are shown in Table 1 below. After the combination as described above, using a vinyl jar (Jar) and zirconia ball (ZrO 2 -Ball) was mixed in a planetary mill. At this time, distilled water was used as a dispersion medium, and the well mixed slurry was calcined at 1050 to 1150 ° C. for 4 hours according to the composition after drying, which was then ground to have an appropriate particle size. The powder thus obtained was molded by dry pressing under a pressure of 1000 kg / cm 2 in the form of a disc having a diameter of 12 mm. The molded specimen was sintered at 1300 ~ 1330 ° C., and then applied with silver (Ag) paste on both sides of the obtained sintered body, and held at 800 ° C. for 10 minutes. Then, the dielectric constant (εr) and dielectric loss (tanδ = 1 / Q) were measured at 25 ° C. and 1 MHz using an LCR meter of YHP 4275A. The results are shown in Table 1.
한편, 온도계수는 25℃의 유전율을 기준으로 하여 85℃에서의 유전율 값을 측정하여 구하였다.On the other hand, the temperature coefficient was obtained by measuring the dielectric constant value at 85 ℃ based on the dielectric constant of 25 ℃.
여기서 온도계수의 계산은 다음식으로 구하였다.The temperature coefficient was calculated by the following equation.
TK : 온도계수(ppm/℃)TK: Temperature coefficient (ppm / ℃)
εT: T℃에서 유전율값ε T : dielectric constant value at T ℃
ε25: 25℃에서 유전율값ε 25 : Dielectric constant value at 25 ° C
T : 측정온도T: Temperature measured
하기 표 1에서 보는 바와 같이 본 발명의 자기 유전체 조성물은 유전율이 상대적으로 높고 유전손실이 작고 온도계수도 ±30ppm/℃ 이내로 될 수 있다.As shown in Table 1, the magnetic dielectric composition of the present invention may have a relatively high dielectric constant, a low dielectric loss, and a temperature coefficient of ± 30 ppm / ° C.
[표 1]TABLE 1
*표는 본 발명 범주외의 비교실시예를 나타낸 것이다.* Table shows comparative examples outside the scope of the present invention.
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KR1019900005998A KR940011696B1 (en) | 1990-04-27 | 1990-04-27 | Dielectric composite for compensating the temperature |
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