KR940010315A - Capacitor Manufacturing Method Using Ferroelectric Thin Film - Google Patents
Capacitor Manufacturing Method Using Ferroelectric Thin Film Download PDFInfo
- Publication number
- KR940010315A KR940010315A KR1019920018859A KR920018859A KR940010315A KR 940010315 A KR940010315 A KR 940010315A KR 1019920018859 A KR1019920018859 A KR 1019920018859A KR 920018859 A KR920018859 A KR 920018859A KR 940010315 A KR940010315 A KR 940010315A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- ferroelectric thin
- semiconductor substrate
- forming
- diffusion barrier
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 239000003990 capacitor Substances 0.000 title claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract 9
- 239000000758 substrate Substances 0.000 claims abstract 8
- 239000000463 material Substances 0.000 claims abstract 7
- 239000004065 semiconductor Substances 0.000 claims abstract 7
- 230000004888 barrier function Effects 0.000 claims abstract 6
- 238000009792 diffusion process Methods 0.000 claims abstract 6
- 239000012535 impurity Substances 0.000 claims abstract 5
- 238000000151 deposition Methods 0.000 claims abstract 4
- 239000007772 electrode material Substances 0.000 claims abstract 3
- 239000013078 crystal Substances 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 150000002500 ions Chemical class 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 4
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910002367 SrTiO Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000003980 solgel method Methods 0.000 claims 1
- 238000010406 interfacial reaction Methods 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 고유전상수를 갖는 강유전체 박막은 이용한 커패시터의 형성시 계면반응 및 일부물질의 손실은 개선자기 위한 강유전체 박막을 이용한 커패시터 제조방법에 관한 것으로, 특히 단결정 반도체기판에 불순물 이온을 주입하는 공정, 상기 불순물이 주입된 반도체기판 위에 확산장벽층을 형성하는 공정, 상기 확산장벽층 위에 강유전체물질을 증착하여 박막을 형성하는 공정, 상기 반도체기판을 금속열처리하여 상기 비정질의 강유전체 박막을 결정화시키는 공정, 및 상기 강유전체 박막 위에 전극물질을 증착하여 상부전극은 형성하는 공정을 포함하는 것을 특징으로 하는 강유전체 박막을 이용한 커패시터 제조방법을 제공한다.The present invention relates to a method of manufacturing a capacitor using a ferroelectric thin film for improving the interfacial reaction and loss of some materials when forming a capacitor using a ferroelectric thin film having a high dielectric constant, in particular, the process of injecting impurity ions into a single crystal semiconductor substrate, Forming a diffusion barrier layer on the semiconductor substrate into which impurities are implanted; depositing a ferroelectric material on the diffusion barrier layer to form a thin film; crystallizing the amorphous ferroelectric thin film by performing metal heat treatment on the semiconductor substrate; and Provided is a capacitor manufacturing method using a ferroelectric thin film, comprising the step of forming an upper electrode by depositing an electrode material on the ferroelectric thin film.
본 발명에 따르면, 종래의 방법에서 강유전체재료의 결정화시 문제시되는 일부 성분의 휘발 및 계면반응을 억제할 수 있으므로 더 좋은 전기적 특성을 갖는 강유전체 박박 커패시터를 제조할 수 있다.According to the present invention, it is possible to suppress the volatilization and interfacial reaction of some components that are a problem in the crystallization of the ferroelectric material in the conventional method, it is possible to manufacture a ferroelectric thin capacitor having better electrical properties.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도 내지 제9도는 본 발명에 따른 강유전체 박막을 이용한 커패시터 제조방법을 설명하기 위한 도면.2 to 9 are views for explaining a capacitor manufacturing method using a ferroelectric thin film according to the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920018859A KR100269278B1 (en) | 1992-10-14 | 1992-10-14 | Method for manufacturing capacitor using ferroelectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920018859A KR100269278B1 (en) | 1992-10-14 | 1992-10-14 | Method for manufacturing capacitor using ferroelectric thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940010315A true KR940010315A (en) | 1994-05-26 |
| KR100269278B1 KR100269278B1 (en) | 2000-10-16 |
Family
ID=19341131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920018859A KR100269278B1 (en) | 1992-10-14 | 1992-10-14 | Method for manufacturing capacitor using ferroelectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100269278B1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100393197B1 (en) * | 1996-10-31 | 2003-11-01 | 삼성전자주식회사 | Ferroelectric capacitor and manufacturing method thereof |
| KR100402240B1 (en) * | 1996-06-28 | 2004-06-11 | 주식회사 하이닉스반도체 | Method for forming ferroelectric layer of semiconductor device |
| KR100436059B1 (en) * | 1997-12-30 | 2004-12-17 | 주식회사 하이닉스반도체 | Method for forming ferroelectric capacitor to prevent ferroelectric characteristic of pzt tnin film from being deteriorated |
| CN112928200A (en) * | 2021-01-21 | 2021-06-08 | 齐鲁工业大学 | Lead zirconate titanate piezoelectric film and preparation method and application thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000025577A (en) * | 1998-10-13 | 2000-05-06 | 윤종용 | Method for making pzt capacitor by nitrogen environment thermal process |
| KR101027970B1 (en) | 2008-02-26 | 2011-04-13 | 전자부품연구원 | Power Anmplifier With Internal Matching Network Using Ferroelectrics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6072261A (en) * | 1983-09-28 | 1985-04-24 | Fujitsu Ltd | Semiconductor memory |
| EP0490288A3 (en) * | 1990-12-11 | 1992-09-02 | Ramtron Corporation | Process for fabricating pzt capacitors as integrated circuit memory elements and a capacitor storage element |
-
1992
- 1992-10-14 KR KR1019920018859A patent/KR100269278B1/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100402240B1 (en) * | 1996-06-28 | 2004-06-11 | 주식회사 하이닉스반도체 | Method for forming ferroelectric layer of semiconductor device |
| KR100393197B1 (en) * | 1996-10-31 | 2003-11-01 | 삼성전자주식회사 | Ferroelectric capacitor and manufacturing method thereof |
| KR100436059B1 (en) * | 1997-12-30 | 2004-12-17 | 주식회사 하이닉스반도체 | Method for forming ferroelectric capacitor to prevent ferroelectric characteristic of pzt tnin film from being deteriorated |
| CN112928200A (en) * | 2021-01-21 | 2021-06-08 | 齐鲁工业大学 | Lead zirconate titanate piezoelectric film and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100269278B1 (en) | 2000-10-16 |
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