KR940005992B1 - Dielectric material - Google Patents
Dielectric material Download PDFInfo
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- KR940005992B1 KR940005992B1 KR1019920001944A KR920001944A KR940005992B1 KR 940005992 B1 KR940005992 B1 KR 940005992B1 KR 1019920001944 A KR1019920001944 A KR 1019920001944A KR 920001944 A KR920001944 A KR 920001944A KR 940005992 B1 KR940005992 B1 KR 940005992B1
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- composition
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- basno
- mgtio
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- 239000003989 dielectric material Substances 0.000 title description 2
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 3
- 239000003985 ceramic capacitor Substances 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910002929 BaSnO3 Inorganic materials 0.000 abstract 1
- 229910002976 CaZrO3 Inorganic materials 0.000 abstract 1
- 229910017676 MgTiO3 Inorganic materials 0.000 abstract 1
- 229910007271 Si2O3 Inorganic materials 0.000 abstract 1
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011656 manganese carbonate Substances 0.000 abstract 1
- 235000006748 manganese carbonate Nutrition 0.000 abstract 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000691 measurement method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- -1 MgTiO 3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
본 발명은 유전체 자기와 100% Ag 전극을 사용하여 제조되는 자기콘덴서의 조성물에 관한 것으로, 특히 고유전율계로 사용되는 원판형 고정 자기콘덴서에 관한 것이다.The present invention relates to a composition of a magnetic capacitor manufactured using a dielectric porcelain and a 100% Ag electrode, and more particularly to a disk-shaped fixed magnetic capacitor used as a high dielectric constant meter.
일반적으로 고유전율계 자기 콘덴서는 BaTiO3를 주성분으로 하는 세라믹 유전체를 1300℃ 이상의 고온에서 소성한 후 전극을 도포하여 제조되는 것으로 타 유전체에 비하여 유전율이 높은 콘덴서이다. 이는 전자기기의 측로회로나 결합회로등에 또한 품질계수(Q) 값이나 정전용량의 안정성이 거의 중요하지 않은 회로에 사용되어지는 콘덴서로서 일반적으로 이를 고유전율계 자기콘덴서라 한다.In general, high dielectric constant magnetic capacitors are manufactured by firing a ceramic dielectric composed mainly of BaTiO 3 at a high temperature of 1300 ° C. or higher and then applying an electrode, and have a higher dielectric constant than other dielectrics. These capacitors are used in the side circuits and coupling circuits of electronic devices, and in circuits where quality factor (Q) value or capacitance stability is of little importance. Generally, these are called high-k magnetic capacitors.
본 발명은 이러한 고유전율계 고정 자기콘덴서 중에서 -25℃~+85℃의 사용 온도 범위에서 온도계수가 +22%~-56%인 Y5U 특성을 갖는 원판형 고정 자기콘덴서의 유전체 자기 조성물 및 그에 따른 자기 콘덴서의 제조방법을 제공하고자 하는 것이다.The present invention relates to a dielectric ceramic composition of a disk-shaped fixed magnetic capacitor having a Y5U characteristic having a temperature coefficient of + 22% to -56% in a temperature range of -25 ° C to + 85 ° C among the high dielectric constant fixed magnetic capacitors, and the magnetic field thereof. It is to provide a method of manufacturing a capacitor.
즉, 본 발명에 따라 유전상수 10,000±1,000, Y5U(+22%~-56%) 특성의 세라믹 콘덴서용 유전체 조성물을 제조하기 위해서 조성원료인 BaTiO3, CaZrO3, BaSnO3, Bi2O3, MgTiO3, SiO2, MnCO3를 각각 중량비로 구성하여 볼밀기로 습식혼합을 시행한 건조, 분쇄하여 성형한 후 전기로에서 종래의 자기콘덴서 제조공정에 따라 소성시킨다. 이후 소결된 시편을 100%Ag 전극을 도포하고 전극은소를 하여 납땜후 완제품으로 하고, 이들의 전기적 특성을 측정한다. 이때 측정항목 및 방법은 용량, 손실은 4220A Test chamber(Saunder 사) 및 4194A Impedence/Gain-phase Analyzer, 절연저항(IR)은 SM-10E ultra MΩ Meter 등을 사용하며, SEM을 통하여 소결된 시료의 표면 및 단면을 관찰한다.That is, according to the present invention, in order to prepare a dielectric composition for ceramic capacitors having a dielectric constant of 10,000 ± 1,000 and Y5U (+ 22% to -56%), the composition materials BaTiO 3 , CaZrO 3 , BaSnO 3 , Bi 2 O 3 , MgTiO 3 , SiO 2 , and MnCO 3 are each weighted, dried, pulverized, wet-mixed with a ball mill, and then fired in an electric furnace according to a conventional magnetic capacitor manufacturing process. The sintered specimen is then coated with a 100% Ag electrode, the electrode is sintered to a finished product after soldering, and their electrical properties are measured. At this time, the measurement items and methods use capacity, loss of 4220A Test Chamber (Saunder) and 4194A Impedence / Gain-phase Analyzer, and insulation resistance (IR) of SM-10E ultra MΩ Meter, etc. Observe the surface and cross section.
본 발명에서의 세라믹 유전체 조성물은, 고유전율계 자기 콘덴서의 기본 물질로 사용되는 BaTiO3를 주성분으로 87.71w/o(중량%, 즉 Weight %를 의미한다), 부성분으로는 전체에 대해 1.80~4.37w/o까지의 BaSnO3, 6.75~9.32w/o까지의 CaZrO3를 포함하고 여기에 온도특성 및 소결성을 개선하기 위해 Bi2O3, MgTiO3, SiO2를 각각 0.40~0.60w/o, 0.19w/o, 0.21w/o~0.23w/o를 포함하며 여기에 발색원료 및 절연성 물질인 MnCO3를 0.15w/o 포함한다.The ceramic dielectric composition according to the present invention is composed of BaTiO 3 , which is used as a base material of the high dielectric constant magnetic capacitor, as a main component of 87.71 w / o (meaning% by weight, ie, weight%), and as a minor component of 1.80 to 4.37 as a whole. w / o to include CaZrO 3 to BaSnO 3, 6.75 ~ 9.32w / o, and to improve the temperature characteristics and sintering characteristics here Bi 2 o 3, MgTiO 3, 0.40 ~ 0.60w / o of SiO 2, respectively, 0.19 w / o, 0.21 w / o to 0.23 w / o, and 0.15 w / o of MnCO 3 as a coloring material and insulating material.
본 발명의 제조 공정흐름도를 간략하게 요약하면 다음과 같다.Briefly summarized the manufacturing flow chart of the present invention is as follows.
1) 원료 평량(weighing), 2) 뱃지(batch), 3) 볼밀링(ball milling), 4) 건조(drying), 5) 분쇄(grinding), 6) 체질(sieving, 7) 가압성형(pressing), 8) 소성(sintering), 9) 전극인쇄(electrode printing), 10) 전극은소(electrode sintering), 11) 납땜(soldering), 12) 완제품(products), 13) 실험(testing).1) Weighing of raw materials, 2) Batch, 3) Ball milling, 4) Drying, 5) Grinding, 6) Sieving, 7) Pressing ), 8) sintering, 9) electrode printing, 10) electrode sintering, 11) soldering, 12) products, 13) testing.
본 발명에 따라 상기와 같은 조성물 및 방법으로 제조된 세라믹 자기 유전체 콘덴서는 "Y5U" 특성을 나타내는 동시에 제반 전기적 특성이 종래의 고유전율계 자기콘덴서에 비해 조금도 뒤떨어지지 않고 원가절감효과가 있기 때문에 본 발명의 유전체 조성물에 의한 우수한 특성의 원판형 고정 자기콘덴서를 제공할 수 있다는 특장점이 있는 것이다.According to the present invention, the ceramic magnetic dielectric capacitor manufactured by the composition and method as described above exhibits a "Y5U" characteristic and at the same time, the electrical characteristics thereof are inferior to conventional high-k dielectric magnetic capacitors and have a cost reduction effect. There is a merit that it is possible to provide a disk-shaped fixed magnetic capacitor having excellent characteristics by the dielectric composition of the present invention.
본 발명의 세라믹 유전체 조성물로부터 제조된 자기 콘덴서의 특성을 하기 표 1에 나타내었다.The characteristics of the magnetic capacitor prepared from the ceramic dielectric composition of the present invention are shown in Table 1 below.
[표 1]TABLE 1
이하 본 발명에서의 구체적 실시예를 기재한다.Hereinafter, specific examples in the present invention will be described.
[실시예 1]Example 1
a) 조성(w/o)a) composition (w / o)
BaTiO387.71 MgTiO30.19BaTiO 3 87.71 MgTiO 3 0.19
BaSnO31.80 SiO20.23BaSnO 3 1.80 SiO 2 0.23
CaZrO39.32 MnCO30.15CaZrO 3 9.32 MnCO 3 0.15
Bi2O30.60Bi 2 O 3 0.60
b) 자기 콘덴서 제조b) magnetic capacitor manufacturing
상기의 세라믹 유전체 조성물 각각을 칭량한 원료 조성물 100g을 물 60ml, 바인더(폴리비닐알콜 10%) 30ml과 혼합후, 볼밀로 습식 혼합 분쇄한 다음, 100℃에서 5시간동안 건조후 80-230mesh 입자크기를 갖도록 한후 3톤의 압력으로 가압하여 11ø, 성형밀도 3.0-3.5을 갖는 성형체를 제조하고, 전기로에서 1320℃-1350℃의 소성조건으로 일반적인 세라믹 유전체 소성공정에 따라 소성한다. 소결된 세라믹 유전체에 100% Ag 페이스트(paste)를 스크린 인쇄(Screen Printing) 한후 전극표면을 800℃×15분의 조건으로 은소한후 납땜하여 완제품으로 하고, 전기한 바와 같은 시험기기를 통하여 제반특성 및 미세구조(Microstructure)를 검사하여 표 2에 기재하였다.100 g of the raw material composition weighing each of the ceramic dielectric compositions was mixed with 60 ml of water and 30 ml of a binder (polyvinyl alcohol 10%), wet-mixed and pulverized with a ball mill, dried at 100 ° C. for 5 hours, and then 80-230 mesh particle size After pressurizing to a pressure of 3 tons to prepare a molded article having a 11 °, molding density 3.0-3.5 and fired in the electric furnace according to the general ceramic dielectric firing process under the firing conditions of 1320 ℃ -1350 ℃. After screen printing 100% Ag paste on the sintered ceramic dielectric, the surface of the electrode is annealed at 800 ℃ × 15 minutes and then soldered to make a finished product. And the microstructure (Inspection) was listed in Table 2.
[실시예 2]Example 2
a) 조성(w/o)a) composition (w / o)
BaTiO387.71 MgTiO30.19BaTiO 3 87.71 MgTiO 3 0.19
BaSnO31.93 SiO20.21BaSnO 3 1.93 SiO 2 0.21
CaZrO39.32 MnCO30.15CaZrO 3 9.32 MnCO 3 0.15
Bi2O30.49Bi 2 O 3 0.49
b) 자기 콘덴서 제조b) magnetic capacitor manufacturing
상기 조성 비율에 따라 실시예 1과 동일한 방법으로 제조하였으며 측정 방법 또한 동일하다.According to the composition ratio was prepared in the same manner as in Example 1 and the measurement method is also the same.
[실시예 3]Example 3
a) 조성(w/o)a) composition (w / o)
BaTiO387.71 MgTiO30.19BaTiO 3 87.71 MgTiO 3 0.19
BaSnO32.02 SiO20.21BaSnO 3 2.02 SiO 2 0.21
CaZrO39.32 MnCO30.15CaZrO 3 9.32 MnCO 3 0.15
Bi2O30.40Bi 2 O 3 0.40
b) 자기 콘덴서 제조b) magnetic capacitor manufacturing
상기 조성 비율에 따라 실시예 1과 동일한 방법으로 제조하였으며, 측정 방법 또한 동일하다.It was prepared in the same manner as in Example 1 according to the composition ratio, the measurement method is also the same.
[실시예 4]Example 4
a) 조성(w/o)a) composition (w / o)
BaTiO387.71 MgTiO30.19BaTiO 3 87.71 MgTiO 3 0.19
BaSnO32.80 SiO20.23BaSnO 3 2.80 SiO 2 0.23
CaZrO38.32 MnCO30.15CaZrO 3 8.32 MnCO 3 0.15
Bi2O30.60Bi 2 O 3 0.60
b) 자기 콘덴서 제조b) magnetic capacitor manufacturing
상기 조성 비율에 따라 실시예 1과 동일한 방법으로 제조하였으며, 측정 방법 또한 동일하다.It was prepared in the same manner as in Example 1 according to the composition ratio, the measurement method is also the same.
[실시예 5]Example 5
a) 조성(w/o)a) composition (w / o)
BaTiO387.71 MgTiO30.19BaTiO 3 87.71 MgTiO 3 0.19
BaSnO34.37 SiO20.23BaSnO 3 4.37 SiO 2 0.23
CaZrO36.75 MnCO30.15CaZrO 3 6.75 MnCO 3 0.15
Bi2O30.60Bi 2 O 3 0.60
b) 자기 콘덴서 제조b) magnetic capacitor manufacturing
상기 조성 비율에 따라 실시예 1과 동일한 방법으로 제조하였으며 측정 방법 또한 동일하다.According to the composition ratio was prepared in the same manner as in Example 1 and the measurement method is also the same.
상기 실시예에 따라 제조된 유전체 조성물에 따른 특성을 종합하여 하기 표 2에 기재하였다.Table 2 summarizes the characteristics of the dielectric composition prepared according to the embodiment.
[표 2]TABLE 2
실시예 1-5에서 볼 수 있듯이 본 유전체 자기 콘덴서 조성물에 대한 발명은 양호한 특성을 가지게 되어 제조원가면이나 콘덴서로서의 제조시 높은 신뢰성을 얻을 수 있게 되어, 본 발명은 고유전율계 원판형 고정 자기 콘덴서의 제조에 있어 유용한 발명이라 할 수 있다.As can be seen from Examples 1-5, the invention of the dielectric magnetic capacitor composition has good characteristics, so that high reliability can be obtained during manufacturing as a manufacturing cost surface or a capacitor. The invention can be said to be useful in the manufacture.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920001944A KR940005992B1 (en) | 1992-02-11 | 1992-02-11 | Dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920001944A KR940005992B1 (en) | 1992-02-11 | 1992-02-11 | Dielectric material |
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| Publication Number | Publication Date |
|---|---|
| KR930018607A KR930018607A (en) | 1993-09-22 |
| KR940005992B1 true KR940005992B1 (en) | 1994-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920001944A KR940005992B1 (en) | 1992-02-11 | 1992-02-11 | Dielectric material |
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| Country | Link |
|---|---|
| KR (1) | KR940005992B1 (en) |
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1992
- 1992-02-11 KR KR1019920001944A patent/KR940005992B1/en not_active IP Right Cessation
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| KR930018607A (en) | 1993-09-22 |
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