JPH07109726B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH07109726B2 JPH07109726B2 JP61121966A JP12196686A JPH07109726B2 JP H07109726 B2 JPH07109726 B2 JP H07109726B2 JP 61121966 A JP61121966 A JP 61121966A JP 12196686 A JP12196686 A JP 12196686A JP H07109726 B2 JPH07109726 B2 JP H07109726B2
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- Japan
- Prior art keywords
- weight
- parts
- ceramic composition
- sample
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 （産業上の利用分野） この発明は誘電体磁器組成物に関し、特に積層コンデン
サなどの誘電体材料に適する誘電体磁器組成物に関す
る。TECHNICAL FIELD The present invention relates to a dielectric ceramic composition, and particularly to a dielectric ceramic composition suitable for a dielectric material such as a multilayer capacitor.
（従来技術） 従来、この種の誘電体磁器組成物としては、BaTiO3ある
いはTiO2を主成分とする磁器組成物が用いられてきた。(Prior Art) Conventionally, as this type of dielectric ceramic composition, a ceramic composition containing BaTiO 3 or TiO 2 as a main component has been used.
（発明が解決しようとする問題点） しかしながら、そのような従来の磁器組成物を用いて、
たとえば積層コンデンサを作成し、これをレーザによっ
て静電容量調整すると、レーザ光の照射によって磁器損
傷部の絶縁抵抗値が著しく低下してしまい、コンデンサ
としての性能を著しく損なうという欠点があった。(Problems to be Solved by the Invention) However, using such a conventional porcelain composition,
For example, if a multilayer capacitor is prepared and its capacitance is adjusted by a laser, the insulation resistance value of the damaged portion of the porcelain is remarkably lowered by the irradiation of the laser beam, and the performance as the capacitor is significantly impaired.
そこで、レーザ光の照射を受けても絶縁抵抗値が低下し
ない、Al2O3系磁器を用いることが考えられるが、Al2O3
系磁器はその焼結温度が1600℃以上と著しく高いため、
従来のPdやPtでさえも内部電極として使用できない。Therefore, does not decrease the insulation resistance even under irradiation of the laser beam, it is conceivable to use Al 2 O 3 based ceramic, Al 2 O 3
Since the sintering temperature of system porcelain is extremely high at 1600 ° C or higher,
Even conventional Pd and Pt cannot be used as internal electrodes.
それゆえに、この発明の主たる目的は、Al2O3系磁器よ
り低温で焼結することができ、かつレーザ光の照射を受
けても損傷部の絶縁抵抗値が低下しない誘電体磁器組成
物を提供することである。Therefore, the main object of the present invention is to provide a dielectric porcelain composition which can be sintered at a lower temperature than Al 2 O 3 based porcelain, and whose insulation resistance value of a damaged part does not decrease even when irradiated with laser light. Is to provide.
（問題点を解決するための手段） この発明は、Al2O3100重量部に対して、TiO2を0.5〜10.
0重量部、およびMnO2を0.5〜6.0重量部含む、誘電体磁
器組成物である。The present invention (means for solving the problems) for Al 2 O 3 100 parts by weight, the TiO 2 0.5 to 10.
It is a dielectric ceramic composition containing 0 part by weight and 0.5 to 6.0 parts by weight of MnO 2 .
（発明の効果） この発明によれば、1360℃以下の温度で焼結でき、レー
ザ光の照射を受けても絶縁抵抗値が著しく低下しない誘
電体磁器組成物を得ることができる。そして、特に、こ
の発明による誘電体磁器組成物を用いれば、内部電極の
材料として、たとえばニッケルなどを用いることができ
るので、パラジウムや白金を用いなくてもよく、さら
に、レーザによるトリミングの可能な積層コンデンサを
作成することができる。(Effect of the Invention) According to the present invention, it is possible to obtain a dielectric ceramic composition which can be sintered at a temperature of 1360 ° C. or lower and whose insulation resistance value does not significantly decrease even when irradiated with laser light. Further, in particular, when the dielectric ceramic composition according to the present invention is used, nickel or the like can be used as the material of the internal electrodes, so that it is not necessary to use palladium or platinum, and further, trimming by laser is possible. Multilayer capacitors can be created.
この発明の上述の目的，その他の目的，特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろ
う。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below.
（実施例） 原料として、Al2O3,TiO2,MnCO3,Fe2O3,CoCO3,NiO,Cr2O3
およびCuOを、別表１の組成となるように秤量し、ボー
ルミルで16時間、湿式混合した。この混合物を脱水乾燥
し、1000〜1200℃で２時間仮焼した後、バインダとして
ポリビニルアルコールを６〜15重量％添加し、ボールミ
ルで16時間混合粉砕した。次に、この粉砕物を2000kg/c
m2の圧力で乾式プレスし、直径30mm,厚さ0.8mmの円板に
成形し、1240℃〜1550℃で焼結した後、銀電極を800℃
で焼き付けて試料とした。(Example) As a raw material, Al 2 O 3 , TiO 2 , MnCO 3 , Fe 2 O 3 , CoCO 3 , NiO, Cr 2 O 3
And CuO were weighed so as to have the composition shown in Appendix 1 and wet-mixed in a ball mill for 16 hours. This mixture was dehydrated and dried, calcined at 1000 to 1200 ° C. for 2 hours, added with polyvinyl alcohol in an amount of 6 to 15% by weight as a binder, and mixed and pulverized with a ball mill for 16 hours. Next, this crushed product is 2000 kg / c
Dry press at a pressure of m 2 to form a disk with a diameter of 30 mm and a thickness of 0.8 mm and sinter at 1240 ℃ to 1550 ℃, and then silver electrode at 800 ℃.
The sample was baked at.
これらの試料について、次に示す各特性をそれぞれの条
件や測定方法で測定し、その結果を別表２に示した。With respect to these samples, the following characteristics were measured under the respective conditions and measurement methods, and the results are shown in Appendix 2.
（１）焼結温度 （２）誘電率およびQ:周波数1MHz,温度25℃の条件（測
定には横河ヒューレットパッカード社の自動ブリッジを
用いた）。(1) Sintering temperature (2) Dielectric constant and Q: frequency of 1 MHz, temperature of 25 ° C. (automatic bridge from Yokogawa Hewlett Packard was used for measurement).
（３）レーザ光照射後の抵抗値：片面に電極を形成した
試料の該電極部分を出力４ワットのYAGレーザで等分に
分断し、その分断された電極間の抵抗値を200Vの電圧を
印加して測定した値。(3) Resistance value after laser light irradiation: The electrode portion of the sample having an electrode formed on one surface was divided into equal parts with a YAG laser having an output of 4 watts, and the divided resistance value between the electrodes was set to a voltage of 200V. The value measured by applying.
また、比較例としてTiO2系磁器組成物についても同様な
試料を作成し、前述の（１），（２）および（３）の各
特性について測定し、その結果を別表２に併せて示し
た。In addition, as a comparative example, a similar sample was prepared for a TiO 2 porcelain composition, and the characteristics (1), (2) and (3) described above were measured, and the results are also shown in Appendix 2. .
なお、別表１および別表２中で＊印を付したものは、こ
の発明の範囲外のものであり、それ以外はこの発明の範
囲内のものである。It should be noted that those marked with * in Appendix 1 and Appendix 2 are outside the scope of the present invention, and others are within the scope of the present invention.
この別表１および別表２からも明らかなように、この発
明の誘電体磁器組成物における組成の限定理由は次の通
りである。As is apparent from the attached tables 1 and 2, the reasons for limiting the composition of the dielectric ceramic composition of the present invention are as follows.
（１）TiO2の添加が0.5重量部未満では、焼結温度が140
0℃以上となるので好ましくない（試料番号１参照）。
また、TiO2の添加が10.0重量部を超えると、Ｑ値が2000
以下となり、かつレーザ光照射後の抵抗値が1011Ω以下
に低下するので好ましくない（試料番号７参照）。(1) When the addition amount of TiO 2 is less than 0.5 parts by weight, the sintering temperature is 140
It is not preferable because the temperature becomes 0 ° C or higher (see Sample No. 1).
When the addition of TiO 2 exceeds 10.0 parts by weight, the Q value is 2000
It is not preferable because the resistance becomes less than 10 11 Ω or less after the irradiation with laser light (see Sample No. 7).
（２）MnO2の添加が0.5重量部未満では、焼結温度が140
0℃以上となり、かつＱ値が2000以下となるので好まし
くない（試料番号５参照）。また、MnO2の添加が6.0重
量部を超えると、Ｑ値が2000以下となりかつレーザ光照
射後の抵抗値が1011Ω以下に低下するので好ましくない
（試料番号９参照）。(2) If the amount of MnO 2 added is less than 0.5 parts by weight, the sintering temperature will be 140
It is not preferable because it becomes 0 ° C or higher and the Q value becomes 2000 or less (see Sample No. 5). Further, when the addition amount of MnO 2 exceeds 6.0 parts by weight, the Q value becomes 2000 or less and the resistance value after laser light irradiation is lowered to 10 11 Ω or less, which is not preferable (see Sample No. 9).
（３）Co2O3,Fe2O3,NiO,Cr2O3およびCuOのうち少なくと
も１種を添加すると、高いＱ値と高い抵抗値を保ちつ
つ、焼結温度を低下させることができる（試料番号10な
いし試料番号18参照）。しかし、これらの添加が５重量
部を超えると、Ｑ値が著しく低下しかつレーザ光照射後
の抵抗値が1011Ω以下に低下して好ましくない（試料番
号19および試料番号20参照）。(3) When at least one of Co 2 O 3 , Fe 2 O 3 , NiO, Cr 2 O 3 and CuO is added, the sintering temperature can be lowered while maintaining a high Q value and a high resistance value. (See Sample No. 10 to Sample No. 18). However, if the addition amount of these exceeds 5 parts by weight, the Q value is remarkably lowered and the resistance value after laser light irradiation is lowered to 10 11 Ω or less, which is not preferable (see Sample No. 19 and Sample No. 20).
別表２に示したように、この実施例によれば、試料番号
24で示した、従来の磁器の焼結温度1360℃以下の温度で
焼結することができ、2000以上の高いＱ値を有する、誘
電体磁器組成物が得られる。As shown in Appendix 2, according to this example, the sample number
A dielectric ceramic composition, which can be sintered at a temperature of 1360 ° C. or less of the conventional porcelain shown by 24 and has a high Q value of 2000 or more, is obtained.
Claims (2)
NiO,CuOおよびCr2O3のうち少なくとも１種を５重量部以
下（０重量を含まず）含有した、特許請求の範囲第１項
記載の誘電体磁器組成物。2. The composition further comprising Co 2 O 3 , Fe 2 O 3 ,
The dielectric ceramic composition according to claim 1, containing 5 parts by weight or less (not including 0 parts by weight) of at least one of NiO, CuO and Cr 2 O 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61121966A JPH07109726B2 (en) | 1986-05-27 | 1986-05-27 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61121966A JPH07109726B2 (en) | 1986-05-27 | 1986-05-27 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62278704A JPS62278704A (en) | 1987-12-03 |
| JPH07109726B2 true JPH07109726B2 (en) | 1995-11-22 |
Family
ID=14824289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61121966A Expired - Lifetime JPH07109726B2 (en) | 1986-05-27 | 1986-05-27 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109726B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3030558B2 (en) * | 1987-11-28 | 2000-04-10 | ティーディーケイ株式会社 | Dielectric porcelain material |
| JP3562454B2 (en) * | 2000-09-08 | 2004-09-08 | 株式会社村田製作所 | High frequency porcelain, dielectric antenna, support base, dielectric resonator, dielectric filter, dielectric duplexer, and communication device |
| JP4714983B2 (en) * | 2000-10-25 | 2011-07-06 | 宇部興産株式会社 | High frequency dielectric ceramic composition |
| JP5998787B2 (en) * | 2011-12-02 | 2016-09-28 | Toto株式会社 | Semiconductive ceramic sintered body |
-
1986
- 1986-05-27 JP JP61121966A patent/JPH07109726B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62278704A (en) | 1987-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |