KR940004833Y1 - Test structure for measuring proper bipolar current density in etching - Google Patents
Test structure for measuring proper bipolar current density in etching Download PDFInfo
- Publication number
- KR940004833Y1 KR940004833Y1 KR2019910024414U KR910024414U KR940004833Y1 KR 940004833 Y1 KR940004833 Y1 KR 940004833Y1 KR 2019910024414 U KR2019910024414 U KR 2019910024414U KR 910024414 U KR910024414 U KR 910024414U KR 940004833 Y1 KR940004833 Y1 KR 940004833Y1
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- KR
- South Korea
- Prior art keywords
- current density
- etching
- measuring
- test structure
- bipolar current
- Prior art date
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/08—Measuring current density
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
내용 없음.No content.
Description
제1(a)도는 종래의 사시도, (b)는 종래의 헐 셀조 개략도, (c)는 종래의 음극시편상의 전류밀도 그래프.Figure 1 (a) is a conventional perspective view, (b) is a schematic diagram of a conventional hull cell, (c) is a current density graph on a conventional negative electrode specimen.
제2(a)도는 본 고안의 사시도, (b)는 본 고안의 헐 셀조 개략도.2 (a) is a perspective view of the present invention, (b) is a schematic diagram of the hull cell tank of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 함체형 용기 11 : 계단차부1: enclosure type container 11: stairway
12 : 시편12: Psalms
본 고안은 애칭시 적정 양극 전류밀도를 측정하기 위한 헐 셀(Hull Cell)테스터 구조에 관한 것으로, 에칭시(양극반응)특정 에칭상태가 요구하는 적정 전류밀도를 측정하고자 할때 도금시(음극반응)사용되는 헐 셀 테스터를 활용하여 양극 전류밀도를 측정하는 방법에 있어서, 명확한 양극 전류밀도를 측정하기에 적당하도록 된 것이다.The present invention relates to a structure of a Hull Cell tester for measuring the proper anode current density during nicking, and when plating (cathode reaction) to measure the proper current density required by a specific etching state during etching (anode reaction). In the method of measuring the anode current density by using the hull cell tester used, it is suitable for measuring the clear anode current density.
종래의 전해부식 반응의 경우 적정 에칭표면을 얻기 위해서는 각기 다른 전류밀도로 여러번 실험을 반복수행해야 하는 불편함이 있는 것으로, 이는 도면 제1(a)도에서와 같이 헐 셀터스터의 용기구조가 일변이 테이퍼부(101)로된 함체형 용기(100)로 구성되어 제1(b)도에서와 같이 시편(102)표면상의 각위치 a, b, c에 따라 전류밀도는 제1(c)도와 같이 연속적으로 변화하기 때문에 예를들어 b위치에서 전류밀도값과 그에따른 시편표면 양상이 어떤상태인지를 정확히 파악하기에는 다소간 애매한 경우가 발생되는 것으로 제1(c)도에 관한 log식은 임의의 점 X에서의 전류밀도(C. D : Current Density)는 (267㎖ 헐 셀조를 사용할 경우),In the conventional electrolytic corrosion reaction, it is inconvenient to repeat the experiment several times with different current densities in order to obtain an appropriate etching surface, which is one side of the hull celster container structure as shown in FIG. Consists of the container-type container 100 of the tapered portion 101, the current density according to the respective positions a, b, c on the surface of the specimen 102, as shown in Figure 1 (b) As it is continuously changing, for example, it is somewhat ambiguous to accurately determine the state of the current density value and the surface of the specimen at the position b, for example. Current density (C. D: Current Density) at (when using 267 ml Hull Selzo),
C. D=I(27.7-48.7logL)C. D = I (27.7-48.7 logL)
(A/ft2)(A / ft 2 )
여기서 I는 공급전류(A), L은 양극판 사이의 거리(inch).Where I is the supply current (A) and L is the distance between the positive plates (inch).
따라서, 본 고안은 이상과 같은 문제점을 감안하여 이루어진 것으로, 헐셀 테스터의 용기구조의 일변을 계단차를 가지게 형성하여서 임의의 각 전류밀도 위치에서의 시편양상을 보다 명확히 파악케 한 것이다.Accordingly, the present invention has been made in view of the above problems, and by forming one side of the vessel structure of the hull cell tester with a step difference, it is possible to more clearly grasp the specimen shape at any current density position.
이하에서 이를 첨부도면에 의해 상세히 설명하면 다음과 같다.Hereinafter, described in detail by the accompanying drawings as follows.
에칭시 적정 양극 정류밀도를 측정하기 위한 헐 셀테스터에 있어서 제2(a)도에서와 같이 일변이 계단차부(11)로된 함체형 용기(1)로 구성된 것으로, 도면 제2(b)도에서와 같이 시편(12) 표면상의 각 위치 A, B, C에 따라 전류밀도를 측정하기 때문에 보다 명확한 파악이 가능한 것으로, 이 경우 각 시편은 양극간 거리 L1, L2, L3에 따라 각각 상기한 log식, C. P=I(27.7-48.7logL)에 의해 각 A, B, C… 위치에 따른 전류밀도를 산출해낼 수 있으며, 이 경우 A, B, C…각 시편상에서는 동일 전류밀도분포가 존재하므로 각 전류밀도에서의 시편양상을 파악하는데 용이케되는 것으로, 공급전원(2)으로 부터 일정전류를 보내어 일정시간 유지후각 A, B, C 시편상의 전류밀도는 정해지며, 이 경우 일정시간 경과후 각 시편에 흐른 전류밀도와 표면양상을 비교함으로써 적정 에칭전류를 추정해 낼 수 있는 효과가 있는 것이다.In the Hull cell tester for measuring the proper anode rectification density during etching, the hull cell tester is composed of a container type container 1 having a stepped portion 11 as shown in FIG. 2 (a), and FIG. 2 (b) As can be seen, the current density is measured according to the positions A, B, and C on the surface of the specimen 12, so that it is possible to understand more clearly.In this case, each specimen is determined according to the distance between the anodes L 1 , L 2 , and L 3 , respectively. In the above log equation, C. P = I (27.7-48.7 logL), each of A, B, C... The current density can be calculated according to the position, in which case A, B, C… Since the same current density distribution exists on each specimen, it is easy to grasp the specimen shape at each current density. The current density of the A, B, and C specimens is maintained for a certain time by sending a constant current from the power supply (2). In this case, the proper etching current can be estimated by comparing the current density and the surface appearance of each specimen after a certain time.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910024414U KR940004833Y1 (en) | 1991-12-27 | 1991-12-27 | Test structure for measuring proper bipolar current density in etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910024414U KR940004833Y1 (en) | 1991-12-27 | 1991-12-27 | Test structure for measuring proper bipolar current density in etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930015321U KR930015321U (en) | 1993-07-28 |
| KR940004833Y1 true KR940004833Y1 (en) | 1994-07-21 |
Family
ID=19326042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910024414U KR940004833Y1 (en) | 1991-12-27 | 1991-12-27 | Test structure for measuring proper bipolar current density in etching |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940004833Y1 (en) |
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1991
- 1991-12-27 KR KR2019910024414U patent/KR940004833Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR930015321U (en) | 1993-07-28 |
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