KR940004442B1 - Method of forming wiring - Google Patents
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- KR940004442B1 KR940004442B1 KR1019910013509A KR910013509A KR940004442B1 KR 940004442 B1 KR940004442 B1 KR 940004442B1 KR 1019910013509 A KR1019910013509 A KR 1019910013509A KR 910013509 A KR910013509 A KR 910013509A KR 940004442 B1 KR940004442 B1 KR 940004442B1
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- 238000000034 method Methods 0.000 title claims description 35
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 239000006117 anti-reflective coating Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- -1 hydrogen Chemical compound 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
제1a도 내지 제1d도는 종래 기술의 반도체장치의 금속배선 형성 공정을 도시한 도면이며,1A to 1D are views showing a metal wiring forming process of a semiconductor device of the prior art,
제2a도 내지 제2d도는 본 발명의 반도체장치의 금속배선 형성 공정을 도시한 도면이다.2A to 2D are diagrams illustrating a metal wiring forming process of the semiconductor device of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
11 : 실리콘 기판 12 : 절연막11 silicon substrate 12 insulating film
13 : 배리어 금속 14 : 알루미늄합금13 barrier metal 14 aluminum alloy
15 : 저 반사율층 16 : 수소 분위기15: low reflectance layer 16: hydrogen atmosphere
17 : 수소, 산소 또는 암모니아 가스 분위기17: hydrogen, oxygen or ammonia gas atmosphere
본 발명은 반도체장치의 금속배선 형성 방법에 관한 것으로, 특히 배선으로 사용되는 알루미늄 합금의 신뢰성을 향상시켜서 스트레스 마이그레이션 (Stress Migration), 일렉트로마이그레이션(Electromigration), 힐록(Hillock)등을 억제하도록 한 반도체장치의 금속배선 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming metal wirings in semiconductor devices, and more particularly, to improve the reliability of aluminum alloys used for wiring to suppress stress migration, electromigration, hilllock, and the like. It relates to a metal wiring forming method.
반도체 집적회로를 반도체 기판상에 형성할 때 형성된 개별소자들은 다른 소자들 또는 전원에 전기적으로 연결되어야 하는데 이를 위해서 배선공정이 요구된다. 이에 대한 종래 기술로서 알루미늄 합금 배선 방법을 보면 다음과 같다.The individual elements formed when the semiconductor integrated circuit is formed on the semiconductor substrate must be electrically connected to other elements or a power source, which requires a wiring process. As a related art, an aluminum alloy wiring method is as follows.
먼저 제1a도와 같이 실리콘 기판(1)상에 절연막(2)을 입히고 스퍼터링 방법으로 Ti/Tin, TiW, MoSi2등을 데포지션 하거나 화학기상증착법(CVD)을 이용하여 W등을 데포지션하여 배리어 메탈(Barrier Metal)을 형성한다. 이어서 제1b도와 같이 스퍼터링 방법으로 알루미늄 합금(4)을 데포지션한다. 이때 알루미늄 합금은 아루미늄-1% 실리콘, 알루미늄-1% 실리콘-0.5% 카파, 알루미늄-2% 카파등의 재료를 사용한다.First, as shown in FIG. 1A, an insulating film 2 is coated on the silicon substrate 1, and Ti / Tin, TiW, MoSi 2 is deposited by sputtering, or W is deposited using chemical vapor deposition (CVD). A metal is formed. Subsequently, the aluminum alloy 4 is deposited by the sputtering method as shown in FIG. 1B. At this time, the aluminum alloy uses materials such as aluminum-1% silicon, aluminum-1% silicon-0.5% kappa and aluminum-2% kappa.
계속해서 사진식각공정에 유용한 반사율을 얻기 위해서 제1c도와 같이 저 반사율층(Anti-Reflectiv-Coating)(5)인 TIN 등을 스퍼터링 방법으로 데포지션 시킨다.Subsequently, in order to obtain a reflectance useful for the photolithography process, TIN, which is a low reflectivity layer (Anti-Reflectiv-Coating) 5, is deposited by a sputtering method as shown in FIG. 1C.
마지막으로 제1d도와 같이 상기 저 반사율층(5) 위에 절연막(2)을 데포지션 하고, 패드 콘택(Pad Contact)을 연 후 수소분위기(6)에서 열처리 하므로 배선을 형성하게 된다.Finally, as shown in FIG. 1D, an insulating film 2 is deposited on the low reflectance layer 5, a pad contact is opened, and heat treatment is performed in the hydrogen atmosphere 6 to form wiring.
이와 같이 형성된 알루미늄 합금 배선은 다결정 알루미늄 구조이므로, 표면이나 입자사이의 입계(Grain Boundary)가 전기적, 화학적, 기계적으로 취약하여 열처리나 소자 적용시에 입계에서 석출물이 발생하고 공극 (Viod)이 발생하여 신뢰성이 악화된다.Since the aluminum alloy wire formed as above is a polycrystalline aluminum structure, the grain boundary between the surface and the particles is electrically, chemically and mechanically weak. Thus, precipitates are generated at the grain boundaries and voids are generated during heat treatment or device application. Reliability deteriorates.
즉, 일반적으로 A1 또는 A1합금배선은 스퍼터링 또는 CVD법으로 형성하므로 여러 방향으로 성장하는 결정립들이 다결정막으로서 집합된 다결정립 입계가 존재한다. 결정입계는 원자결합이 불완전한 상태이므로 원자의 확산속도가 결정립내에서 보다 빠르게 되고 물리적으로 취약하여 후공정의 열처리 과정을 거치면서 압축응력을 받은 원자들이 돌출하여 힐록발생과 인장응력을 받은 원자들이 이동하여 공극을 형성하는 보이드 현상이 유발된다. 이와같은 상태에서 제품화되면 전자의 흐름이 지속됨에 따라 원자의 이동이 일어나서 단선되는 일렉트로마이그레션과 같은 신뢰성 악화현상이 나타난다.That is, in general, since A1 or A1 alloy wiring is formed by sputtering or CVD, there exist polycrystalline grain boundaries in which crystal grains growing in various directions are aggregated as polycrystalline films. As the grain boundary is incomplete state of atomic bond, the diffusion speed of atoms is faster and physically weak in the grains, and the atoms subjected to compressive stress protrude through the heat treatment of the post process, and the atoms subjected to hillock generation and tensile stress move. This causes voids to form voids. When commercialized in this state, as the flow of electrons continues, the movement of atoms occurs, leading to deterioration of reliability, such as electromigration, which is broken.
본 발명은 이와 같은 문제점을 해결하기 위해 안출된 것으로서, 본 발명의 목적은 열처리 가스성분중의 원자를 도입하여 불완전한 원자결합을 보충시키므로서 결정입계의 특성을 결정립내의 특성 즉 단결정 특성에 근사하게 하도록 하는 배선형성방법을 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object of the present invention is to introduce an atom in a heat treatment gas component to compensate for an incomplete atomic bond, so that the characteristics of the grain boundary approximate to those in the grains, that is, single crystal properties. It is to provide a wiring forming method.
본 발명에 따른 반도체장치의 금속배선 형성 방법에 있어서 실리콘 기판 상에 절연막을 입히고 배리어 메탈을 데포지션하는 공정과, 상기 형성된 배리어 메탈 상에 알루미늄 합금을 스퍼터링 방법으로 50℃내지 300℃에서 데포지션 하는 공정과, 사진식각 공정에 유용한 반사율을 얻기 위해서 저 반사율층(ARC)을 스퍼터링 방법으로 형성하는 공정과, 절연막을 데포지션 한 후 패드콘택을 열어 배선을 형성하는 공정으로 이루어지되, 각 공정에서 막형성후 선택적으로 수소, 산소, 또는 질소원소를 포함하는 가스분위기에서 이들 원소가 해당 막질에 포함되도록 열처리를 행하는 공정을 포함한다.In the method for forming a metal wiring of a semiconductor device according to the present invention, a step of depositing an insulating film on a silicon substrate and depositing a barrier metal, and depositing an aluminum alloy on the formed barrier metal at a temperature of 50 ℃ to 300 ℃ by sputtering method A process of forming a low reflectance layer (ARC) by sputtering to obtain a reflectance useful for a photolithography process, and forming a wiring by opening a pad contact after depositing an insulating film. And forming a heat treatment such that these elements are included in the film quality in a gas atmosphere optionally containing hydrogen, oxygen, or nitrogen elements after formation.
본 발명에 대해 첨부된 도면 제2도를 참조하여 각각의 실시예를 설명하면 다음과 같다. 그리고 도면은 다음의 각 실시예 모두를 설명하고 있으나, 다음의 설명으로부터 분명해질 것이다.Referring to the accompanying drawings, the second embodiment of the present invention will be described as follows. And while the drawings illustrate all of the following embodiments, it will be apparent from the following description.
제1실시예로서 제2a도에 도시된 바와 같이 실리콘 기판(11)상에 절연막(12)을 입히고 스퍼터링 또는 화학기상중지법(CVD)으로 배리어 메탈(13)을 데포지션하고 24시간 이내에 실온 내지 450℃ 온도에서 수소 분위기(17)로 1분 내지 30분 동안 열처리 하여 배리어 금속의 표면 및 입계에 상기 수소 원자가 침투되도록 한다.As a first embodiment, as shown in FIG. 2A, an insulating film 12 is deposited on a silicon substrate 11, and the barrier metal 13 is deposited by sputtering or chemical vapor deposition (CVD), and then, at room temperature to within 24 hours. Heat treatment is performed at a temperature of 450 ° C. for 1 to 30 minutes in a hydrogen atmosphere 17 to allow the hydrogen atoms to penetrate the surface and grain boundaries of the barrier metal.
이와 같이 배리어 메탈 데포지션 후에 수소분위기에서 열처리 하고 이어서 제2b도와 같이 스퍼터링 법으로 50℃~300℃에서 알루미늄 합금(14)을 증착한 후 24시간 이내에 수소(H2), 산소+질소(O2+N2), 또는 암모니아(NH3)등을 분위기(16)로 하여 실온 내지 450℃에서 1분 내지 30분 동안 열처리 하므로 알루미늄 합금의 표면 및 입계에 수소 원자나 산소원자 등이 침투되도록 한다.After the barrier metal deposition, heat treatment in a hydrogen atmosphere, and then deposit the aluminum alloy (14) at 50 ℃ ~ 300 ℃ by sputtering method as shown in Figure 2b within 24 hours hydrogen (H 2 ), oxygen + nitrogen (O 2 + N 2 ) or ammonia (NH 3 ), etc. as an atmosphere 16, is heat-treated at room temperature to 450 ° C. for 1 to 30 minutes to allow hydrogen atoms or oxygen atoms to penetrate the surface and grain boundaries of the aluminum alloy.
계속해서 사진식각 공정에 유용한 반사율을 얻기 위해서 제2c도와 같이 저 반사율층(Anti-Reflective-Coating)(15)으로서 TiN등을 스퍼터링 방법으로 형성하고 이어서 제2d도와 같이 상기 저반사율층(15) 상에 절연막(12)을 데포지션 한 후 패드 콘택을 열고 수소분위기(18)에서 열처리 하므로 배선을 형성한다.Subsequently, TiN or the like is formed as a low reflectivity layer (Anti-Reflective-Coating) 15 by the sputtering method as shown in FIG. 2C to obtain a reflectance useful for the photolithography process, and then on the low reflectance layer 15 as shown in FIG. 2D. After the insulating film 12 is deposited, the pad contact is opened and heat treated in the hydrogen atmosphere 18 to form wiring.
상기 공정에서 입계에 도입된 H, O, N등의 원자는 결정입계의 불완전한 원자 결합부분에 들어가서 원자 결합을 보충시키므로 입계특성을 개선한다. 따라서 입계확산, 원자이동등을 감소시켜 신뢰성을 개선한다.Atoms such as H, O, and N introduced into the grain boundary in the process enter the incomplete atomic bond portion of the grain boundary and supplement the atomic bond, thereby improving grain boundary characteristics. Therefore, it improves reliability by reducing grain boundary diffusion and atomic migration.
다음에 본 발명의 제2실시예로서 상기한 제1실시예와 유사하지만 상기 제1실시예의 공정 과정에서 배리어 메탈 형성후에 수소 분위기(17)에서의 열처리 하는 공정을 생략하고 제2b도와 같이, 배리어 메탈 형성후에 수소 분위기에서의 열처리 없이 알루미늄 합금을 스퍼터링 법으로 50℃~300℃에서 데포지션한 후 24시간 이내에 수소(H2), 산소+질소(O2+N2), 또는 암모니아(NH3)등을 분위기(16)로 하여 실온 내지450℃에서 1분 내지 30분 동안 열처리 하므로 알루미늄 합금의 표면 및 입계에 수소 원자나 산소원자등이 침투되도록 하고 그 후의 공정은 제1실시예와 동일하다.Next, the second embodiment of the present invention is similar to the first embodiment described above, but the heat treatment in the hydrogen atmosphere 17 after the formation of the barrier metal in the process of the first embodiment is omitted, and as shown in FIG. After metal formation, the aluminum alloy is deposited at 50 ° C to 300 ° C by sputtering without heat treatment in a hydrogen atmosphere, and then hydrogen (H 2 ), oxygen + nitrogen (O 2 + N 2 ), or ammonia (NH 3 ) within 24 hours. Heat treatment at room temperature to 450 ° C. for 1 to 30 minutes, so that hydrogen atoms or oxygen atoms penetrate the surface and grain boundaries of the aluminum alloy, and the subsequent steps are the same as those of the first embodiment. .
본 발명의 제3실시예로서는 제2a도와 같이 실리콘 기판 상에 절연막을 입히고 배리어 메탈을 데포지션한 후 24시간 이내에 실온 내지 450℃에서 가스 분위기로 1분 내지 30분 동안 열처리 하고, 상기 형성된 배리어 메탈 상에 알루미늄 합금을 스퍼터링 방법으로 데포지션하며 이때 알루미늄 합금에 대한 열처리 없이 다음 공정으로 사진식각 공정에 유용한 반사율을 얻기 위해서 저 반사율층(ARC)을 스퍼터링 방법으로 형성하도록 한다. 이어서 절연막을 데포지션 한 후 패드콘택을 열고 가스 분위기(18)에서 열처리 하므로 배선을 형성하여 본 실시예에 따른 공정을 행한다.In a third embodiment of the present invention, as shown in FIG. 2A, an insulating film is coated on a silicon substrate and the barrier metal is deposited, and then heat-treated for 1 to 30 minutes in a gas atmosphere at room temperature to 450 ° C. within 24 hours, and the formed barrier metal phase The aluminum alloy is deposited by a sputtering method. At this time, a low reflectance layer (ARC) is formed by a sputtering method in order to obtain a reflectance useful for a photolithography process in the next step without heat treatment of the aluminum alloy. Subsequently, after the insulating film is deposited, the pad contact is opened and heat-treated in the gas atmosphere 18. Thus, the wiring is formed to perform the process according to the present embodiment.
또 한편으로는 제2a도의 또는 (B)에서의 취약부(배선표면이나 입계)의 분위기 열처리는 배리어 금속이나 알루미늄 합금의 증착 도중에 상기 분위기(H2, O2+N2, NH3)만을 도입하는 공정으로 대체할 수도 있다.On the other hand, the atmosphere heat treatment of the weak part (wiring surface or grain boundary) in FIG. 2A or (B) introduces only the atmosphere (H 2 , O 2 + N 2 , NH 3 ) during deposition of the barrier metal or aluminum alloy. It may be replaced by a process.
이와 같이 알루미늄 합금의 표면 및 입계에 수소 또는 산소 원자를 침투시키고 열처리를 하므로 표면 및 입계를 전기적, 화학적, 기계적으로 안정화 시키게 되고, 따라서 상기 취약부에서 발생할 수 있는 힐록(Hillock), 공극(Void), 석출물(Precipition)등의 발생을 억제하여 배선의 신뢰성을 향상시킬 수 있다.In this way, hydrogen or oxygen atoms penetrate the surface and grain boundaries of the aluminum alloy and heat treatment to stabilize the surface and grain boundaries electrically, chemically, and mechanically, and thus, hillocks, voids, The generation of precipitates can be suppressed to improve the reliability of the wiring.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910013509A KR940004442B1 (en) | 1991-08-05 | 1991-08-05 | Method of forming wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910013509A KR940004442B1 (en) | 1991-08-05 | 1991-08-05 | Method of forming wiring |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930005117A KR930005117A (en) | 1993-03-23 |
| KR940004442B1 true KR940004442B1 (en) | 1994-05-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910013509A KR940004442B1 (en) | 1991-08-05 | 1991-08-05 | Method of forming wiring |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940004442B1 (en) |
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1991
- 1991-08-05 KR KR1019910013509A patent/KR940004442B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR930005117A (en) | 1993-03-23 |
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