KR940002937A - Contact manufacturing method of semiconductor device - Google Patents

Contact manufacturing method of semiconductor device Download PDF

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Publication number
KR940002937A
KR940002937A KR1019920011700A KR920011700A KR940002937A KR 940002937 A KR940002937 A KR 940002937A KR 1019920011700 A KR1019920011700 A KR 1019920011700A KR 920011700 A KR920011700 A KR 920011700A KR 940002937 A KR940002937 A KR 940002937A
Authority
KR
South Korea
Prior art keywords
film
semiconductor device
insulating film
manufacturing
contact
Prior art date
Application number
KR1019920011700A
Other languages
Korean (ko)
Inventor
이헌철
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920011700A priority Critical patent/KR940002937A/en
Publication of KR940002937A publication Critical patent/KR940002937A/en

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Abstract

본 발명은 실리콘 질화막 (Si3N4)을 식각장애물(barrier)로 이용한 반도체 소자의 콘택 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor device contact using a silicon nitride film (Si 3 N 4 ) as an etch barrier (barrier).

그리고 상기 본 발명은 실리콘 질화막을 식각 장애물로 사용함과 동시에 평탄화용 절연막을 비트선과 워드선의 단락시키는 종래의 측벽 스페이셔(spacer)로 사용할수 있는것으로, 특별히 워드선부의 스페이서를 형성하는 공정이 필요가 없기 때문에 공정의 단순화를 이룰수 있을 뿐만 아니라 포토마스크 공정상의 여유도를 확보할수 있는 장점을 갖는 반도체 소자의 콘택 제조방법에 관한 것이다.In addition, the present invention can use the silicon nitride film as an etch barrier and at the same time can use the planarization insulating film as a conventional sidewall spacer to short-circuit the bit line and the word line. The present invention relates to a method for manufacturing a contact for a semiconductor device having an advantage of not only simplifying a process but also securing a margin in a photomask process.

Description

반도체 소자의 콘택 제조방법Contact manufacturing method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 콘택 제조방법1 is a contact manufacturing method according to the present invention

Claims (2)

게이트 전극을 갖는 반도체 소자의 콘택 제조방법에 있어서, 반도체 기판(1)에 소자분리 절연막(2)을 형성한 후에 제 1폴리실리콘막(3), 제1절연막 (4), 질화막(Si3N4) (5)을 차례로 증착하고 감광물질로 패턴한 다음 상기 질화막(5), 제1절연막(4), 제1폴리실리콘막(3)을 비등방성 식각하는 제1단계, 상기 제1단계후에 상기 제1폴리실리콘막(3)을 또다시 비등방성 식각하여 워드선의 임계 크기를 형성하는 제2단계, 상기 제2단계후에 제2절연막(6)을 도포하고 콘택홀을 마스크로 정의하여 상기 제2절연악(5)을 식각하는 제3단계. 및 상기 제3단계후에 제2폴리실리콘막(7)과 실리사이드막(8)을 차례로 중착하는 제4단계을 구비하는 것을 특징으로 하는 반도체소자의 콘택 제조방법.In the method for manufacturing a contact of a semiconductor device having a gate electrode, after the device isolation insulating film 2 is formed on the semiconductor substrate 1, the first polysilicon film 3, the first insulating film 4, and the nitride film Si 3 N 4 ) The first step of anisotropically etching the nitride film (5), the first insulating film (4), the first polysilicon film (3) by depositing (5) in sequence and patterning with a photosensitive material, after the first step Anisotropically etching the first polysilicon film 3 again to form a critical size of the word line, and after the second step, the second insulating film 6 is coated and the contact hole is defined as a mask. 2nd step of etching the insulating music (5). And a fourth step of sequentially neutralizing the second polysilicon film (7) and the silicide film (8) after the third step. 제1항에 있어서, 상기 제3단계의 제2절연막(6)의 식각 잔류물이 상기 제1폴리실리콘막(3)의 측벽에 잔류되는 것을 특징으로 하는 반도체 소자의 콘택 제조방법.2. The method of claim 1, wherein an etching residue of the second insulating film (6) of the third step is left on the sidewall of the first polysilicon film (3). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920011700A 1992-07-01 1992-07-01 Contact manufacturing method of semiconductor device KR940002937A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920011700A KR940002937A (en) 1992-07-01 1992-07-01 Contact manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920011700A KR940002937A (en) 1992-07-01 1992-07-01 Contact manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR940002937A true KR940002937A (en) 1994-02-19

Family

ID=67296760

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920011700A KR940002937A (en) 1992-07-01 1992-07-01 Contact manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR940002937A (en)

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