KR940002236Y1 - Rf input switching circuit for bs tuner - Google Patents

Rf input switching circuit for bs tuner Download PDF

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KR940002236Y1
KR940002236Y1 KR2019910022512U KR910022512U KR940002236Y1 KR 940002236 Y1 KR940002236 Y1 KR 940002236Y1 KR 2019910022512 U KR2019910022512 U KR 2019910022512U KR 910022512 U KR910022512 U KR 910022512U KR 940002236 Y1 KR940002236 Y1 KR 940002236Y1
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switching
tuner
signal
input
diode
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KR2019910022512U
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KR930016708U (en
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진호봉
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삼성전기 주식회사
황선두
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes

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  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Abstract

내용 없음.No content.

Description

BS튜너의 RF 입력절환회로RF input switching circuit of BS tuner

제 1 도는 종래의 회로도.1 is a conventional circuit diagram.

제 2 도는 본 고안의 회로도.2 is a circuit diagram of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

Q11∼Q12: 증폭트랜지스터 D11∼D12: 스위칭다이오드Q 11 to Q 12 : Amplifying transistors D 11 to D 12 : Switching diodes

R11∼R14: 저항 C11∼C19: 콘덴서R 11 to R 14 : resistance C 11 to C 19 : condenser

본 고안은 BS 튜너의 입력단 RF앰프 스위칭에 관한 것으로, 특히 R/L의 입력 RF신호를 선택적으로 증폭하여 출력하기 위한 BS튜너의 RF입력절환회로에 관한 것이다.The present invention relates to the switching of the RF amplifier input stage of the BS tuner, and more particularly to the RF input switching circuit of the BS tuner for selectively amplifying and outputting the input RF signal of the R / L.

위성방송전파수신용 파라볼라 안테나로 입력된 원편파의 위성방송신호는 저잡음 블록컨버터(LNB)에 의해 직선편파로 변환되어 저잡음증폭 및 1차 변환된 후 BS 튜너에 입력된다. BS 튜너에서는 LNB에서 입력되는 RF신호를 RF증폭하게 되는데, 이 RF신호는 R신호와 L신호로 구분되기 때문에 R 및 L방송신호를 모두 수신하기 위해서는 각각의 LNB와 BS튜너가 필요하게 된다. 그러나 최근 위성방송기술의 발달로 하나의 LNB와 BS튜너로서 R 및 L위성방송을 수신할 수 있게된다.The satellite broadcast signal of the circular polarized wave inputted to the satellite broadcasting parabolic antenna is converted into linearly polarized wave by a low noise block converter (LNB), and then converted into a low noise amplification and primary conversion, and then input to the BS tuner. In the BS tuner, the RF signal input from the LNB is RF amplified. Since the RF signal is divided into an R signal and an L signal, each LNB and BS tuner are required to receive both the R and L broadcast signals. However, with the recent development of satellite broadcasting technology, it is possible to receive R and L satellite broadcasting as one LNB and BS tuner.

이와같은 R/L위성방송신호 공요수신시스템에서 BS튜너의 입력단에는 R신호와 L신호를 선택적으로 증폭하기위한 RF앰프가 필요하게 된다. 통상 RF앰프는 R신호와 L신호의 상호간섭을 피하기위해 각각 독립적으로 설계되고 있으며 외부 스위칭선택전압과 회로공급전압을 이용하여 두 개의 RF앰프를 상호 절환동작시키고 있다.In the R / L satellite broadcasting signal receiving system, an RF amplifier for selectively amplifying the R signal and the L signal is required at the input of the BS tuner. In general, RF amplifiers are independently designed to avoid mutual interference between R and L signals, and two RF amplifiers are mutually switched by using an external switching selection voltage and a circuit supply voltage.

제 1 도는 기존의 제안된 RF입력절환회로를 보이고 있다.1 shows a conventional RF input switching circuit.

여기에서 팜조되는 바와같이, RF입력은 커플링콘덴서(C3, C6)와 스위칭다이오드(D1)의 직렬신호통로를 통하여 출력되게 구성하고, RF L입력은 커플링콘덴서(C4, C5, C6)와 스위치다이오드의 직렬신호통로를 통하여 출력되게 구성하며, 상기 스위칭다이오드(D1, D3)는 스위칭전압(Vsw)에 의해 서로 반대로 동작하는 트랜지스터(Q1, Q2)에 의해 온/오프제어되게 구성하고 있다.As shown here, the RF input is configured to be output through the serial signal path of the coupling capacitors C 3 and C 6 and the switching diode D 1 , and the RF L input is coupled to the coupling capacitors C 4 and C. 5, C 6) and configured to be output through the serial signal path of the switch diode and the switching diode (D 1, D 3) is a transistor (Q 1, Q 2) which operates reversely to each other by the switch voltage (V sw) It is configured to be controlled on / off by.

따라서, +12V의 스위칭전압(Vsw)이 발생되면 트랜지스터(Q2)가 온되어 RF L신호가 선택된다. 이때, 트랜지스터(Q1)은 오프상태이므로 다이오드(D1)도 오프상태를 유지하여 RF R신호는 출력되지 않게된다.Therefore, when the + 12V switching voltage V sw is generated, the transistor Q 2 is turned on to select the RF L signal. At this time, since the transistor Q 1 is in the off state, the diode D 1 is also kept in the off state so that the RF R signal is not output.

한편, -12V의 스위칭전압(Vsw)이 발생되면, 트랜지스터(Q1)는 온, 트랜지스터(Q2)는 오프되므로 다이오드(D1)은 바이어스 온, 다이오드(D2)는 바이어스 오프되어 RF R신호만 선택되게 된다.On the other hand, when a switching voltage V sw of −12 V is generated, the transistor Q 1 is turned on and the transistor Q 2 is turned off, so that the diode D 1 is biased and the diode D 2 is biased off to RF. Only the R signal is selected.

여기에서 L1, L2는 LNB파워(VLNB)의 전원노이즈 흡수용 콘덴서이고, R1-R8은 스위칭 트랜지스터 및 스위칭 다이오드의 바이어스저항이다.Here, L 1 and L 2 are capacitors for absorbing power noise of LNB power (V LNB ), and R 1 -R 8 are bias resistors of the switching transistor and the switching diode.

그러나 상기한 종래의 회로는 회로동작전압(B+)와 스위칭 전압을 별도로 필요하게되며, 단순히 RF R/L신호를 선택적으로 전달하는 기능뿐이어서 RF R/L출력단에 별도의 RF앰프가 설계되어야 한다. 따라서 BS튜너의 PCB사이즈 증가와 구성상의 복잡화를 가져오게된다.However, the above-mentioned conventional circuit requires a circuit operating voltage (B + ) and a switching voltage separately, and merely has a function of selectively transferring the RF R / L signal, so that a separate RF amplifier must be designed at the RF R / L output stage. do. This increases the PCB size of the BS tuner and the complexity of the configuration.

본 고안은 위성방송 R/L신호의 선택과 RF증폭을 동시에 달성하면서 분리특성을 저하시키지 않는 간단한 BS튜너의 RF입력절환회로를 제공한다.The present invention provides a simple BS tuner RF input switching circuit which simultaneously achieves the selection and RF amplification of satellite broadcasting R / L signals and does not degrade the separation characteristics.

이하 첨부한 도면에 기초하여 본 고안을 설명하면 다음과 같다.Hereinafter, the present invention will be described based on the accompanying drawings.

제 2 도에서, RF R입력신호는 커플링콘덴서(C13)를 통하여 RF증폭트랜지스터(Q11)의 RF출력은 스위칭다이오드(D11)를 역방향으로 통하여 커플링콘덴서(C15, C19)를 거쳐 출력되게 연결한다.In FIG. 2, the RF R input signal is coupled to the coupling capacitor C 13 , and the RF output of the RF amplifier transistor Q 11 is coupled to the coupling capacitor C 15 and C 19 through the switching diode D 11 in the reverse direction. Connect to output through.

상기 증폭트랜지스터(Q11)의 베이스-콜렉터사이에는 바이어스저항(R11)을 연결하여 저항(R13)와 상기 다이오드(D11)를 거친 스위칭전압(Vsw)에 의해 증폭트랜지스터와 상기 다이오드(D11)가 동시에 바이어스되게 연결한다.Between the collector connected to the bias resistor (R 11) resistance (R 13) and the amplifying transistor by a switching voltage (V sw) passed through the diode (D 11) and the diode (-base of the amplifying transistor (Q 11) D 11 ) are biased at the same time.

RF L입력신호는 커플링콘덴서(C14)를 통하여 RF증폭트랜지스터(Q12)의 베이스로 입력되게 연결하고, 상기 증폭트랜지스터(Q12)의 RF출력은 스위칭다이오드(D12)를 역방향으로 통하여 커플링콘덴서(C16, C19)를 거쳐 출력되게 연결한다.The RF L input signal is connected to the base of the RF amplifying transistor Q 12 through a coupling capacitor C 14 , and the RF output of the amplifying transistor Q 12 passes through the switching diode D 12 in the reverse direction. Connect the output via coupling capacitor ( C16 , C19 ).

상기 증폭트랜지스터(Q12)의 베이스-콜렉터사이에는 바이어스저항(R12)을 연결하여 저항(R14)과 상기 다이오드(D12)를 거친 스위칭전압(Vsw2)에 의해 증폭트랜지스터(Q12)와 상기 다이오드(D12)가 동시에 바이어스되게 연결한다.The amplifying transistor (Q 12) the base of the-by between the collector bias resistor (R 12) by connecting a resistor (R 14) and the diode (D 12) the rough switching voltage (V sw2) amplifying transistor (Q 12) And the diode D 12 are simultaneously connected to be biased.

여기에서 L11, L12는 마이크로스트립라인에 의한 인덕터로써 LNB파워(VLNB)를 각각의 LNB측으로 공급하게되며, C11, C12, C17, C18은 전원노이즈흡수용 콘덴서이다.In this case, L 11 and L 12 are inductors by the microstrip line, and LNB power (V LNB ) is supplied to each LNB side, and C 11 , C 12 , C 17 , and C 18 are power noise absorbing capacitors.

이와같이 구성된 본 고안의 작용 및 효과를 설명하면 다음과 같다.Referring to the operation and effects of the present invention configured as described above are as follows.

먼저, RF R입력신호를 선택하는 경우에는 스위칭전압(Vsw1)을 발생시킨다.First, when the RF R input signal is selected, a switching voltage V sw1 is generated.

이 스위칭전압(Vsw1)은 저항(R13)과 스위칭다이오드(D11)와 저항(R11)을 직렬로 통하여 증폭트랜지스터(Q11)를 바이어스한다. 따라서 증폭트랜지스터(Q11)의 베이스에 입력된 RF R입력신호는 증폭트랜지스터(Q11)로 증폭된후 다이오드(D11)와 커플링콘덴서(C15, C19)를 거쳐 출력된다.The switching voltage V sw1 biases the amplifying transistor Q 11 through a resistor R 13 , a switching diode D 11 , and a resistor R 11 in series. Therefore, the RF input signal R inputted to the base of the amplifying transistor (Q 11) is output via the then amplified by the amplifier transistor (Q 11) the diode (D 11) and a coupling capacitor (C 15, C 19).

이와는 반대로 RF L입력신호를 선택하여 증폭하는 경우에는 스위칭전압(Vsw2)을 발생시킨다.On the contrary, when the RF L input signal is selected and amplified, a switching voltage V sw2 is generated.

이 스위칭전압(Vsw2)는 저항(R14), 스위칭다이오드(D12), 저항(R12)을 직렬과 통하여 증폭트랜지스터(Q12)를 바이어스한다. 따라서 커플링콘덴서(C14)를 통하여 입력되는 RF L신호는 증폭트랜지스터(D12)로 증폭된후 스위칭다이오드(D12)와 커플링콘덴서(C16, C19)를 차례로 통하여 출력된다.The switching voltage V sw2 biases the amplifying transistor Q 12 through the resistor R 14 , the switching diode D 12 , and the resistor R 12 in series. Therefore, the RF L signal input through the coupling capacitor C 14 is amplified by the amplifying transistor D 12 and then output through the switching diode D 12 and the coupling capacitor C 16 and C 19 .

그러므로, 본 고안은 RF R/L신호의 선택 및 증폭이 스위칭전압(Vsw1, Vsw2)에 따라 선택적으로 이루어지게 되므로, 별도의 RF증폭회로사 필요없게되며, 분리특성을 향상시킬수 있다.Therefore, the present invention, since the selection and amplification of the RF R / L signal is selectively made according to the switching voltage (V sw1 , V sw2 ), there is no need for a separate RF amplifier circuit, it is possible to improve the separation characteristics.

또한 RF R/L신호의 선택 및 증폭회로가 간략화되므로 BS튜너의 RCB사이즈를 소형화시킬수 있다.In addition, since the RF R / L signal selection and amplification circuits are simplified, the RCB size of the BS tuner can be reduced.

Claims (1)

BS튜너의 RF R/L신호절환 및 증폭회로에 있어서, RF R/L입력신호가 각각의 커플링콘덴서(C13, C14)를 통하여 각각의 증폭트랜지스터(Q11, Q12)에서 증폭된후 각각의 스위칭다이오드(D11, D12)를 역방향으로 통하여 출력되게 연결하고, 상기 증폭트랜지스터(Q11, Q12)는 각각의 스위칭 다이오드(D11, D12) 및 저항(R11, R12)를 통한 스위칭전압(Vsw1, Vsw2)에 의해 바이어스되게 연결하여 구성하는 것을 특징으로 하는 BS튜너의 RF입력절환회로.In the RF R / L signal switching and amplifying circuit of the BS tuner, the RF R / L input signal is amplified by each amplifying transistor (Q 11 , Q 12 ) through each coupling capacitor (C 13 , C 14 ). Afterwards, each of the switching diodes D 11 and D 12 is connected to be output in the reverse direction, and the amplifying transistors Q 11 and Q 12 are respectively switched diodes D 11 and D 12 and resistors R 11 and R. 12 ) RF input switching circuit of the BS tuner, characterized in that the configuration is connected biased by the switching voltage (V sw1 , V sw2 ) through.
KR2019910022512U 1991-12-17 1991-12-17 Rf input switching circuit for bs tuner KR940002236Y1 (en)

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Application Number Priority Date Filing Date Title
KR2019910022512U KR940002236Y1 (en) 1991-12-17 1991-12-17 Rf input switching circuit for bs tuner

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Application Number Priority Date Filing Date Title
KR2019910022512U KR940002236Y1 (en) 1991-12-17 1991-12-17 Rf input switching circuit for bs tuner

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KR930016708U KR930016708U (en) 1993-07-29
KR940002236Y1 true KR940002236Y1 (en) 1994-04-11

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