KR940001790B1 - Manufacturing method of poly crystal silicon solar battery typed metal insulator semiconductor - Google Patents
Manufacturing method of poly crystal silicon solar battery typed metal insulator semiconductor Download PDFInfo
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- KR940001790B1 KR940001790B1 KR1019860003176A KR860003176A KR940001790B1 KR 940001790 B1 KR940001790 B1 KR 940001790B1 KR 1019860003176 A KR1019860003176 A KR 1019860003176A KR 860003176 A KR860003176 A KR 860003176A KR 940001790 B1 KR940001790 B1 KR 940001790B1
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- Prior art keywords
- solar cell
- manufacturing
- polycrystalline silicon
- gas
- silicon solar
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 9
- 239000002184 metal Substances 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012212 insulator Substances 0.000 title abstract description 3
- 239000013078 crystal Substances 0.000 title description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 4
- 229910052710 silicon Inorganic materials 0.000 title description 4
- 239000010703 silicon Substances 0.000 title description 4
- 239000007789 gas Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract 4
- 238000000137 annealing Methods 0.000 claims abstract 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000001376 precipitating effect Effects 0.000 claims 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
제1도는, 종래의 태양전지의 개략 단면도.1 is a schematic cross-sectional view of a conventional solar cell.
제2도는, 본 발명 방법에 의한 태양전지의 개략 단면도.2 is a schematic cross-sectional view of a solar cell according to the method of the present invention.
본 발명은 금속절연 반도체(Metal Insulator Semiconductor)(이하 MIS라 약칭함)형 다결정 실리콘 태양전지의 제조방법에 관한 것으로, 특히 공정 및 구조의 단순화를 기하여 태양 에너지의 변환 효율을 증대시키도록 한 MIS형 다결정 실리콘 태양전지의 제조방법에 관한 것이다.BACKGROUND OF THE
종래에는 주로 단결정 실리콘을 이용한 태양 전지의 제조방법이 있었으나, 이는 다결정 실리콘 태양전지에 비하여 고전력의 높은 효율을 가진다는 장점은 있으나, 제품의 생산원가가 높은 문제점이 있었다.Conventionally, there has been a method for manufacturing a solar cell mainly using single crystal silicon, which has the advantage of having high power and high efficiency as compared to polycrystalline silicon solar cells, but has a high production cost problem.
이를 개선하고자 하여 제1도에 도시한 바와 같이 P형 다결정 실리콘표면(2)에 15-20Å 두께 정도의 실리콘 산화물(Si-Oxide)(3)을 형성시킨 후에, 그 위에 다극형(Grid Pattern)의 금속전극(4)을 형성하고, 이에 SiO2, ZnS, TiO2, MgF2등의 조성에 의한 역반사(Antireflection)(이하 AR이라 약칭함) 피막층을 형성한 것이 있으나, 이 역시 단결정 실리콘을 사용한 태양 전지와는 달리 결정 입자 계면에 의한 효과로 인하여 금속과 반도체 사이에 다수 이송자의 에너지 장벽(Schottky Barrier)이 낮고, 또한, 결정 입자 계면에서 소수 이송자(Minorty Carrier)의 재결합 등의 원인으로 고전력의 높은 효율을 얻을 수가 없는 문제점이 있었다.In order to improve this, as shown in FIG. 1, after forming a silicon oxide (Si-Oxide) 3 having a thickness of about 15 to 20 Å on the P-type
본 발명은 이러한 점을 감안하여 반도체 표면에 반전층(Inversion Layer)을 야기시켜 다수 이송자(Majority Carrier)의 에너지 장벽을 높힘과 동시에 결정입자 계면의 표면 안정화(Passivation)를 거쳐 이곳에서 부터의 열전자 방출을 억제하여 역포화 전류를 감소시킴으로서 전지의 기전력과 단락 전류의 특성을 증대시켜 전력 효율을 향상시키도록한 태양전지의 제조방법을 제공하도록한 것으로서, 이를 첨부한 도면에 의하여 그의 제조공정을 설명하면 다음과 같다.In view of this, the present invention causes an inversion layer on the surface of the semiconductor to increase the energy barrier of the majority carrier, and at the same time, through surface stabilization of the crystal grain interface, to release hot electrons therefrom. To reduce the reverse saturation current to increase the characteristics of the electromotive force and the short-circuit current of the battery to provide a method for manufacturing a solar cell to improve the power efficiency. As follows.
제2도는 본 발명의 제조방법에 의한 태양전지의 개략구조 단면도를 나타내고 있는 것으로서,2 is a schematic cross-sectional view of a solar cell according to the manufacturing method of the present invention.
첫째, 후면에 전극을 형성하기 위하여 알루미늄(Al)(1)을 뒷쪽에 침전시킨다.First, aluminum (Al) 1 is deposited on the back side to form an electrode on the back side.
둘째, P형 다결정 실리콘 웨이퍼를 질소 분위기 450℃ 용광로에서 약 10-15분간 풀림(Annealing)하여 산화물을 15-20Å 두께 정도로 형성시킨다.Second, the P-type polycrystalline silicon wafer is annealed in a nitrogen atmosphere 450 ° C. furnace for about 10-15 minutes to form an oxide of about 15-20 μm thick.
셋째, 동작 영역에 전극을 형성하기 위하여 다극형으로 알루미늄(Al)을 증착시킨다.Third, aluminum (Al) is deposited in a multipolar form to form an electrode in the operating region.
네째, 알곤(Ar)에 희석시킨 실란(SiH4)가스와 메탄(NH3)가스의 혼합기체를 이용하여 PECVD(Plasma Enhanced Chemical Vapor Deposition)공법을 이용하여 실리콘 질화물(Silicon Nitride)(13)을 침전시킨다.Fourth, silicon nitride (13) was prepared by using a plasma enhanced chemical vapor deposition (PECVD) method using a mixture of silane (SiH 4 ) gas and methane (NH 3 ) gas diluted in argon (Ar). Precipitate.
이와 같이 실리콘질화물(13)을 형성시키게 되면, 질화물과 산화물 계면 사이에 고정 양극 전하(Fixed Positive Charge)(12)가 발생하게 되어 반도체 표면상에 반전 영역을 형성하게 되며, 상기와 같은 반전 영역에 의하여 금속과 반도체 사이의 에너지 장벽을 높여주게 되는 것이다.As such, when the
따라서, 빛에 의하여 반도체 내부에 생성된 다수 이송자가 금속 영역으로 방출되는 량이 감소되므로서, 전지의 기전력이 증가하게 된다.Therefore, the amount of light emitted from the plurality of carriers generated inside the semiconductor to the metal region is reduced, thereby increasing the electromotive force of the battery.
또한, 질화물의 침전시에 수소(H2)가스가 실리콘 결정 입자내로 침투하게 되어 실리콘과 결합하여 결정입자계면을 표면 안정화시킴으로서 소수 이송자의 재결합을 줄이게 되어 어둠 전류(Dark Current)를 감소시키게 되므로, 전지의 단락 전류를 증가시킬 수가 있는 것이다.In addition, since the hydrogen (H 2 ) gas penetrates into the silicon crystal grains when the nitride is precipitated, it is combined with silicon to stabilize the grain boundary surface, thereby reducing the recombination of the minority carriers, thereby reducing the dark current. The short circuit current of the battery can be increased.
이상에서와 같이 본 발명은 표면 상태와 결정 입자 계면에 있어, 수소에 의한 표면안정화로 표면 재결합 속도를 감소시킬 뿐만 아니라, 고정 양극 절연전하에 의하여 실리콘표면상에 형성된 반전 영역으로서, 금속과 반도체 계면에서의 에너지 장벽을 높힐 수가 있는 것이어서, 전지의 기전력과 단락 전류를 증가시킬 수가 있어, 태양전지의 효율을 향상시킴은 물론 제품의 생산 코스트를 저렴화할 수가 있는 것이다.As described above, the present invention not only reduces the surface recombination rate due to surface stabilization by hydrogen at the surface state and the crystal grain interface, but also as an inverted region formed on the silicon surface by the fixed anode insulating charge. By increasing the energy barrier at, it is possible to increase the electromotive force and short-circuit current of the battery, thereby improving the efficiency of the solar cell and reducing the production cost of the product.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019860003176A KR940001790B1 (en) | 1986-04-24 | 1986-04-24 | Manufacturing method of poly crystal silicon solar battery typed metal insulator semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019860003176A KR940001790B1 (en) | 1986-04-24 | 1986-04-24 | Manufacturing method of poly crystal silicon solar battery typed metal insulator semiconductor |
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| Publication Number | Publication Date |
|---|---|
| KR870010638A KR870010638A (en) | 1987-11-30 |
| KR940001790B1 true KR940001790B1 (en) | 1994-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019860003176A KR940001790B1 (en) | 1986-04-24 | 1986-04-24 | Manufacturing method of poly crystal silicon solar battery typed metal insulator semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102180043A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for printing pattern on solar battery sheet |
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1986
- 1986-04-24 KR KR1019860003176A patent/KR940001790B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102180043A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for printing pattern on solar battery sheet |
| CN102180043B (en) * | 2010-12-02 | 2012-08-08 | 浚鑫科技股份有限公司 | Method for printing pattern on solar battery sheet |
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| Publication number | Publication date |
|---|---|
| KR870010638A (en) | 1987-11-30 |
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