KR930024119A - In-situ BPSG film deposition and planarization method - Google Patents
In-situ BPSG film deposition and planarization method Download PDFInfo
- Publication number
- KR930024119A KR930024119A KR1019920007416A KR920007416A KR930024119A KR 930024119 A KR930024119 A KR 930024119A KR 1019920007416 A KR1019920007416 A KR 1019920007416A KR 920007416 A KR920007416 A KR 920007416A KR 930024119 A KR930024119 A KR 930024119A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- sccm
- teos
- deposition process
- deposition
- Prior art date
Links
- 238000011065 in-situ storage Methods 0.000 title claims abstract 3
- 239000005380 borophosphosilicate glass Substances 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract 12
- 238000005137 deposition process Methods 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Abstract
본 발명은 반도체공정에서 필수적으로 사용되어오는 비피에스지 필름증착 및 평탄화 개선방법에 관한 것으로서, 현재까지는 대부분의 반도체 제조공정에서 상압화학적 증착방법에 의하여 비피에스지 필름을 증착하고 다른 전기로에서 대기압 상태에서 평탄화공정을 실시하여 왔으나 본 발명에서는 이러한 공정을 한 전기로 내에서 인-시튜로 연속적으로 실행함으로써 필름의 특성을 향상시키며 평탄화를 개선시키며 또한 진공상태에서 평탄화를 실행함으로써 필름특성을 개선하여 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for improving the deposition and planarization of a BP film, which is essentially used in a semiconductor process. Up to now, most BPS film is deposited by atmospheric pressure chemical vapor deposition in a semiconductor manufacturing process and planarized under atmospheric pressure in another electric furnace. Although the process has been carried out, in the present invention, the process is performed continuously in-situ in one electric furnace to improve the properties of the film and to improve the flattening, and also to improve the film properties by performing the flattening under vacuum. will be.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 증착공정 개요도, 제3도 제4도는 본 발명과 같은 증착조건에 따라 공정완료된 비피에스지 필름을 전자현미경으로 확대한 실제사진.Figure 1 is a schematic view of the deposition process of the present invention, Figure 3 Figure 4 is an actual photograph of an enlarged BPS film processed under the same deposition conditions as the present invention by an electron microscope.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920007416A KR950003231B1 (en) | 1992-05-01 | 1992-05-01 | In situ depositing method of bpsg and plannerizing method thereby |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920007416A KR950003231B1 (en) | 1992-05-01 | 1992-05-01 | In situ depositing method of bpsg and plannerizing method thereby |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930024119A true KR930024119A (en) | 1993-12-22 |
KR950003231B1 KR950003231B1 (en) | 1995-04-06 |
Family
ID=19332604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920007416A KR950003231B1 (en) | 1992-05-01 | 1992-05-01 | In situ depositing method of bpsg and plannerizing method thereby |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950003231B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100265326B1 (en) * | 1993-12-29 | 2000-09-15 | 김영환 | Deposition mehtod of oxidation film |
KR100417645B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for forming interlayer dielectric of semiconductor device |
-
1992
- 1992-05-01 KR KR1019920007416A patent/KR950003231B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100265326B1 (en) * | 1993-12-29 | 2000-09-15 | 김영환 | Deposition mehtod of oxidation film |
KR100417645B1 (en) * | 1996-12-28 | 2004-04-13 | 주식회사 하이닉스반도체 | Method for forming interlayer dielectric of semiconductor device |
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