KR930022531A - Phase reversal mask and manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phase shift mask and a method of manufacturing the same, and more particularly, to a halftone type phase shift mask and a method of manufacturing the same. According to the present invention, a substrate comprising a substrate transparent to exposure light, an optically transparent etch stop layer formed on the substrate, a phase shifter having a predetermined shape formed on the etch stop layer, and a halftone layer formed on the phase shifter are envisioned. A phase inversion mask is provided, which is characterized by the above-mentioned. Accordingly, in the method of manufacturing a halftone phase inversion mask, by forming an etch stop layer between the quartz mask substrate and the shifter, it is possible to control the depth of uniform shifting (uniformity ≤ ± 2%) and obtain a stable phase inversion effect. As a result, it is possible to secure characteristics and improve stability during wafer exposure.

Description

Phase reversal mask and manufacturing method

Since this is an open matter, no full text was included.

4a to 4e is a process flowchart showing a method of manufacturing a halftone phase shift mask according to the present invention.

5 is a view showing a comparison between the exposure characteristics of the conventional half mask and the halftone phase inversion mask according to the present invention.

Claims (13)

A phase inversion comprising a substrate transparent to exposure light, an optically transparent etch stop layer formed on the substrate, a phase shifter having a predetermined shape formed on the blocking layer, and a halftone layer formed on the phase shifter. Mask The phase shift mask of claim 1, wherein the etch stop layer is an AL ₂ O ₃ film or an ITO film. The phase shift mask of claim 2, wherein the etch stop layer has a thickness of about 180A to about 200A. The phase shift mask of claim 1, wherein the phase shifter layer is an SOG film or an SIO ₂ film. The thickness of the phase shifter layer is / 2 (n-1) (where Is wavelength of exposed light, n is wavelength The refractive index of the material constituting the phase shifter layer in the phase inversion mask. The phase shift mask of claim 1, wherein the halftone layer is a chromium layer. The phase shift mask according to claim 6, wherein the chromium layer has a thickness of 280A to 300A. Forming an optically clear etch stop layer on a transparent substrate with respect to exposure light, and a phase shifter layer and a halftone layer are sequentially formed on the etch stop layer, and then the halftone layer and the phase shifter layer are formed in a pattern having a predetermined shape. Method of manufacturing a phase inversion mask, characterized in that consisting of a step of patterning. The method of claim 8, wherein the etching stop layer is formed by applying AI ₂ O ₃ or indium tin oxide (ITO) to the thickness of 180A to 200A by a sputtering method. The method of claim 8, wherein the phase shifter layer is SOG or SIO ₂ / 2 (n-1) (where Is wavelength of exposed light, n is wavelength The refractive index of the material constituting the phase shifter layer in the) is formed by spin coating to a thickness. The method of claim 8, wherein the halftone layer is formed of chromium in a thickness of 280A to 300A thin. The method of claim 8, wherein the patterning of the phase shifter layer comprises applying a photoresist on the halftone layer, patterning the photoresist through an exposure and development process using an electron beam, and then using the patterned photoresist as a mask. And etching the halftone layer and the phase shifter layer in sequence. The method of claim 12, wherein the phase shifter layer is etched into the RIE under conditions of a reaction gas CHF ₃ + O ₂ , a power of 150 W to 170 W, and a pressure of 35 mTorr to 40 mTorr. ※ Note: The disclosure is based on the initial application.