KR930016831A - Pattern Formation Method - Google Patents

Pattern Formation Method Download PDF

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Publication number
KR930016831A
KR930016831A KR1019920000807A KR920000807A KR930016831A KR 930016831 A KR930016831 A KR 930016831A KR 1019920000807 A KR1019920000807 A KR 1019920000807A KR 920000807 A KR920000807 A KR 920000807A KR 930016831 A KR930016831 A KR 930016831A
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KR
South Korea
Prior art keywords
field
pattern
energy beam
exposed
exposing
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KR1019920000807A
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Korean (ko)
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KR940011203B1 (en
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조경연
김학
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김광호
삼성전자 주식회사
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Priority to KR1019920000807A priority Critical patent/KR940011203B1/en
Publication of KR930016831A publication Critical patent/KR930016831A/en
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Publication of KR940011203B1 publication Critical patent/KR940011203B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

본 발명은 에너지빔에 대한 노출지역과 이를 둘러싼 비노출지역으로 형성된 패턴에 대한 에너지빔 노광방법에 있어서, 1회의 에너지빔 조사로써 패턴형성이 가능한 필드를 기판상에 구분하고, 큰 패턴은 작은 기본 패턴의 조합으로 이루어지도록 구분하여 작은 기본패턴을 노광시켜 큰 패턴을 형성시키고, 기판상에 형성된 필드에 순차적으로 에너지빔을 조사하는 것을 특징으로 하는 에너지빔의 노광방법에 관한 것이다. 상기 방법은 선행노광된 필드에 오버랩하도록 필드를 구분하여 노광을 실시하는 것이 바람직하다. 본 발명의 방법을 반도체기판상에 형성된 레지스트필드에 전자선을 이용하여 노광하는 경우에 쓰루푸트를 형상시키고, 버팅에러를 감소시킬 수 있다.The present invention provides a method for exposing an energy beam to a pattern formed by an exposure area and an unexposed area surrounding the energy beam, wherein a field capable of forming a pattern by one energy beam irradiation is divided on a substrate, and a large pattern is a small basic pattern. A method of exposing an energy beam, characterized in that to form a large pattern by exposing a small base pattern to be made of a combination of and to sequentially irradiate the energy beam to the field formed on the substrate. In the above method, it is preferable to perform exposure by dividing the fields so as to overlap the previously exposed fields. When the method of the present invention is exposed to a resist field formed on a semiconductor substrate by using an electron beam, throughput can be shaped and the butting error can be reduced.

Description

패턴 형성방법Pattern Formation Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명의 태양인 작은 기본패턴의 조합에 의한 패턴형성방법을 나타낸 개략도이다. 제 3 도는 본 발명의 다른 태양인 기판상에 작은 기본패턴을 조합하여 패턴을 형성할때 필드의 오버랩을 이용하는 방법을나타낸 개략도이다.2 is a schematic view showing a pattern formation method by combining small basic patterns, which is an aspect of the present invention. 3 is a schematic diagram illustrating a method of using overlap of fields when forming a pattern by combining a small basic pattern on a substrate, which is another aspect of the present invention.

Claims (12)

에너지빔에 대한 노출지역과 이를 둘러싼 비노출지역으로 형성된 패턴에 대한 에너지빔 노광방법에 있어서, 1회의 에너지빔 조사로써 패턴형성이 가능한 필드를 기판상에 구분하고, 큰 패턴은 작은 기본패턴의 조합으로 이루어지도록 구분하여작은 기본패턴을 노광시켜 큰 패턴을 형성시키고, 기판상에 형성된 필드에 순차적으로 에너지빔을 조사하는 것을 특징으로 하는 에너지빔의 노광방법.In the energy beam exposure method for the pattern formed by the exposure area to the energy beam and the non-exposed area surrounding the energy beam, the field capable of pattern formation is divided on the substrate by one energy beam irradiation, and the large pattern is a combination of small basic patterns. A method of exposing an energy beam, comprising: exposing a small basic pattern to form a large pattern, and irradiating an energy beam sequentially to a field formed on a substrate. 제 1 항에 있어서, 필드에 에너지빔을 노광하는 경우에 선행노광된 필드에 겹쳐지도록 필드를 구획하여 노광함을 특징으로 하는 방법.The method of claim 1, wherein when exposing an energy beam to the field, the field is divided and exposed so as to overlap the previously exposed field. 제 1 항 또는 제 2 항에 있어서, 최초에 노광하는 필드의 경계선중 필드의 이동방향의 반대쪽 경계선에는 기본패턴의 존재하지 않음을 특징으로 하는 방법.The method according to claim 1 or 2, wherein the basic pattern does not exist at the boundary line opposite to the moving direction of the field among the boundary lines of the field to be initially exposed. 제 1 항 또는 제 2 항에 있어서, 상기 필드가 사각형임을 특징으로 하는 방법.The method of claim 1 or 2, wherein the field is rectangular. 제 1 항 또는 제 2 항에 있어서, 기본패턴이 사각형임을 특징으로 하는 방법.The method of claim 1 or 2, wherein the basic pattern is a rectangle. 제 1 항 또는 제 2 항에 있어서, 에너지빔이 전자비임을 특징으로 하는 방법.The method of claim 1 or 2, wherein the energy beam is an electron ratio. 제 1 항 또는 제 2 항에 있어서, 필드노광시에 필드의 경계면에 작은 기본패턴이 존재하는 경우에 경계면에 있는 작은 기본패턴을 노광하지 않는 것을 특징으로 하는 방법.The method according to claim 1 or 2, wherein the small basic pattern at the boundary is not exposed when there is a small basic pattern at the boundary of the field during field exposure. 제 2 항에 있어서, 선행노광된 필드와의 오버랩의 거리가 작은 기본패턴의 크기와 동일함을 특징으로 하는 방법.3. A method according to claim 2, wherein the distance of overlap with the previously exposed field is equal to the size of the small basic pattern. 제 1 항 또는 제 2 항에 있어서, 필드의 크기가 64㎛임을 특징으로 하는 방법.A method according to claim 1 or 2, characterized in that the size of the field is 64 μm. 제 1 항 또는 제 2 항에 있어서, 기본패턴의 크기라 0.1∼2.0㎛임을 특징으로 하는 방법.The method according to claim 1 or 2, wherein the size of the basic pattern is 0.1 to 2.0 mu m. 제 1 항 또는 제 2 항에 있어서, 상기 패턴을 전자빔 감응성 레지스트필름상에 형성함을 특징으로 하는 방법.A method according to claim 1 or 2, wherein said pattern is formed on an electron beam sensitive resist film. 제 11 항에 있어서, 상기 레지스트필름층이 반도체 기판상에 형성되어 있음을 특징으로 하는 방법.12. The method of claim 11, wherein the resist film layer is formed on a semiconductor substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920000807A 1992-01-21 1992-01-21 Process for producing pattern KR940011203B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920000807A KR940011203B1 (en) 1992-01-21 1992-01-21 Process for producing pattern

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Application Number Priority Date Filing Date Title
KR1019920000807A KR940011203B1 (en) 1992-01-21 1992-01-21 Process for producing pattern

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KR930016831A true KR930016831A (en) 1993-08-30
KR940011203B1 KR940011203B1 (en) 1994-11-26

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