KR930016564A - Parallel Plate Plasma Etching Equipment - Google Patents

Parallel Plate Plasma Etching Equipment Download PDF

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Publication number
KR930016564A
KR930016564A KR1019920000577A KR920000577A KR930016564A KR 930016564 A KR930016564 A KR 930016564A KR 1019920000577 A KR1019920000577 A KR 1019920000577A KR 920000577 A KR920000577 A KR 920000577A KR 930016564 A KR930016564 A KR 930016564A
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KR
South Korea
Prior art keywords
plate
plasma etching
heating means
etching apparatus
parallel
Prior art date
Application number
KR1019920000577A
Other languages
Korean (ko)
Other versions
KR940004101B1 (en
Inventor
배병성
최우호
임석영
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019920000577A priority Critical patent/KR940004101B1/en
Publication of KR930016564A publication Critical patent/KR930016564A/en
Application granted granted Critical
Publication of KR940004101B1 publication Critical patent/KR940004101B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 평행평판형 플라즈마 에칭장치를 개시한다.The present invention discloses a parallel plate plasma etching apparatus.

본 발명에 따른 평행평판형 플라즈마 에칭장치는 에칭가스가 유입되는 챔버와, 이 챔버내에 서로 대면하도록 평행하게 설치되는 음극판 및 양극판과, 이 양극판 상면에 위치하는 기판을 구비하는 평행평판형 플라즈마 에칭장치에 있어서, 상기 양극판의 온도가 그 가장자리부로부터 그 중심부측으로 온도가 점차 높아지도록 그 저면에 가열수단을 설치하여 된 것으로 기판의 중심면 온도가 그 가장자리부의 온도보다 높기 때문에 에칭이 균일하게 이루어 진다.The parallel plate type plasma etching apparatus according to the present invention includes a parallel plate type plasma etching apparatus including a chamber into which an etching gas flows, a cathode plate and a cathode plate installed in parallel to face each other in the chamber, and a substrate located on the anode plate. The heating means is provided on the bottom surface of the anode plate so that the temperature of the positive electrode plate gradually increases from the edge portion thereof to the center portion thereof, and the etching is performed uniformly because the center surface temperature of the substrate is higher than the temperature of the edge portion thereof.

Description

평행평판형 플라즈마 에칭장치Parallel Plate Plasma Etching Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 평행평판형 플라즈마 에칭장치를 도시한 것으로서, (가)는 가열수단이 양극판의 중심면에 설치되었을때의 단면도이고, (나)는 가열수단이 동심원상으로 복수개 설치되었을때의 개략적 저면도이다.2 shows a parallel plate plasma etching apparatus according to the present invention, (A) is a cross-sectional view when the heating means is installed on the center surface of the anode plate, and (B) a plurality of heating means are installed concentrically. A schematic bottom view of the time.

Claims (4)

에칭가스가 유입되는 챔버와, 이 챔버내에의 서로 대면하도록 평행하게 설치되는 음극판 및 양극판과, 이 양극판 상면에 위치하는 기판을 구비하는 평행평판형 플라즈마 에칭장치에 있어서, 상극 양극판(30)의 온도가 그 가장지가부로부터 그 중심부축으로 온도가 점차 높아지도록 그 저면에 가열수단을 설치하여 된 것을 특징으로 하는평행평판형 플라즈마 에칭장치.In a parallel plate plasma etching apparatus comprising a chamber into which an etching gas flows, a cathode plate and a cathode plate which are provided in parallel to face each other in the chamber, and a substrate located on an upper surface of the anode plate, wherein the temperature of the anode plate 30 is increased. A flat plate type plasma etching apparatus, comprising: heating means disposed on a bottom surface thereof so that a temperature gradually increases from its edge to its central axis. 제1항에 있어서, 상기 가열수단이 전기히이터(50)인 것을 특징으로 하는 평행평판형 플라즈마 에칭장치.The apparatus of claim 1, wherein the heating means is an electric heater (50). 제1항 또는 제2항중 어느 1항에 있어서, 상기 가열수단이 상기 양극판(30)의 중심면에 설치된 것을 특징으로 하는 평행평판형 플라즈마 에칭장치.3. The parallel plate type plasma etching apparatus according to any one of claims 1 to 3, wherein said heating means is provided on a center surface of said bipolar plate (30). 제1항 또는 제2항중 적어도 어느 1항에 있어서, 상기 가열수단이 상기 양극판(30)의 중심면으로부터 동심원상으로 복수개설치되어 그 바깥에서 중심으로 향할수록 가열수단의 열용량이 큰 것을 특징으로 하는 평행평판형 플라즈마 에칭장치.The heating means according to claim 1 or 2, wherein the heating means is provided in plural concentric circles from the center surface of the positive electrode plate 30, and the heat capacity of the heating means is larger as it goes toward the center from the outside thereof. Parallel plate type plasma etching apparatus. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920000577A 1992-01-16 1992-01-16 Plasma etching device of parallel plate type KR940004101B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920000577A KR940004101B1 (en) 1992-01-16 1992-01-16 Plasma etching device of parallel plate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920000577A KR940004101B1 (en) 1992-01-16 1992-01-16 Plasma etching device of parallel plate type

Publications (2)

Publication Number Publication Date
KR930016564A true KR930016564A (en) 1993-08-26
KR940004101B1 KR940004101B1 (en) 1994-05-13

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ID=19327978

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920000577A KR940004101B1 (en) 1992-01-16 1992-01-16 Plasma etching device of parallel plate type

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KR (1) KR940004101B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100772270B1 (en) * 2006-08-02 2007-11-01 동부일렉트로닉스 주식회사 Rapid thermal processing apparatus and method for preventing warp of wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100772270B1 (en) * 2006-08-02 2007-11-01 동부일렉트로닉스 주식회사 Rapid thermal processing apparatus and method for preventing warp of wafer

Also Published As

Publication number Publication date
KR940004101B1 (en) 1994-05-13

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