KR930015242A - Surge absorber for communication line and surge absorber circuit using same - Google Patents

Surge absorber for communication line and surge absorber circuit using same Download PDF

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Publication number
KR930015242A
KR930015242A KR1019920025696A KR920025696A KR930015242A KR 930015242 A KR930015242 A KR 930015242A KR 1019920025696 A KR1019920025696 A KR 1019920025696A KR 920025696 A KR920025696 A KR 920025696A KR 930015242 A KR930015242 A KR 930015242A
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KR
South Korea
Prior art keywords
surge absorber
absorber according
layer
semiconductor type
semiconductor element
Prior art date
Application number
KR1019920025696A
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Korean (ko)
Inventor
타카시 시바야마
타카아키 이토오
Original Assignee
후지무라 마사야
미쯔비시마테리알 카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지무라 마사야, 미쯔비시마테리알 카부시키가이샤 filed Critical 후지무라 마사야
Publication of KR930015242A publication Critical patent/KR930015242A/en

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

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  • Emergency Protection Circuit Devices (AREA)

Abstract

통신회선용 흡수서어지는 PNPN구조의 반도체소자와 PN구조의 반도체소자로 구비된다.A semiconductor device having a PNPN structure and a semiconductor device having a PN structure are absorbed for communication lines.

반도체소자의 외측P부로 접속된 단자와 반도체소자의 외측N부로 접속된 단자를 접속단자로 한다.Terminals connected to the outer P portion of the semiconductor element and terminals connected to the outer N portion of the semiconductor element are referred to as connection terminals.

반도체소자의 외측P부로 반도체소자의 N부가 전기적으로 접속되고, 반도체 소자의 게이트단자인 내측P부로 반도체소자의 P부가 전기적으로 접속된다. 통신회로용 흡수서어지는 낮은 브레이크오우버전압에서 큰 서어지전류내량을 얻을 수 있다.The N portion of the semiconductor element is electrically connected to the outer P portion of the semiconductor element, and the P portion of the semiconductor element is electrically connected to the inner P portion, which is a gate terminal of the semiconductor element. A large surge current resistance can be obtained at low breakover voltages absorbed for communication circuits.

Description

통신회선용 서어지흡수기 및 그것을 이용한 서어지흡수회로Surge absorber for communication line and surge absorber circuit using same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 서어지흡수기의 구성도,1 is a block diagram of a surge absorber of the present invention,

제2도는 그 서어지흡수기를 포함하는 회로구성도,2 is a circuit diagram including the surge absorber;

제3도는 본 발명 실시예의 서어지흡수기의 구성도.3 is a block diagram of a surge absorber according to an embodiment of the present invention.

Claims (11)

제1반도체형의 제1층 및 상기층에 결합된 제2반도체형의 제2층으로 구성된 다이오우드와 상기한 제2반도체형의 끝층 및 상기한 제1반도체형의 내층으로 구성된 다이리스터로 구성된 서어지흡수기에 있어서, 상기한 제1층은 상기한 끝층과 전기적으로 접속되고 상기한 제2층은 상기한 내층과 전기적으로 접속되는 것을 특징으로 하는 서어지흡수기.A surge consisting of a diode composed of a first layer of a first semiconductor type and a second layer of a second semiconductor type bonded to the layer, and a thyristor consisting of an end layer of the second semiconductor type and an inner layer of the first semiconductor type described above. The surge absorber according to claim 1, wherein the first layer is electrically connected to the end layer and the second layer is electrically connected to the inner layer. 제1항에 있어서, 상기한 다이리스터가 TRIAC인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 1, wherein the thyristors are TRIACs. 제1항에 있어서, 제2소자가 제너다이오우드인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 1, wherein the second element is a zener diode. 제3항에 있어서, 상기한 제너다아오우드는 제너전압이 10V에서 400V의 범위인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 3, wherein the zener diode has a zener voltage ranging from 10V to 400V. 제1항에 있어서, 상기한 다이리스터는 게이트 트리거전압, 게이트 트리거전류, 보지전류 및 브레이크오우버전압을 갖는 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 1, wherein the thyristor has a gate trigger voltage, a gate trigger current, a holding current, and a brake over voltage. 제5항에 있어서, 상기한 게이트 트리거전압은 500V에서 1000V의 범위인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 5, wherein the gate trigger voltage is in the range of 500V to 1000V. 제5항에 있어서, 상기한 게이트 트리거전류는 15mA에서 600mA의 범위인 것을 특징으로 하는 서어지흡수기.The surge absorber of claim 5, wherein the gate trigger current ranges from 15 mA to 600 mA. 제5항에 있어서, 상기한 보지전류는 10mA에서 500mA의 범위인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 5, wherein the holding current ranges from 10 mA to 500 mA. 제5항에 있어서, 상기한 브레이크오우버전압은 600V에서 1000V의 범위인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 5, wherein the brake overvoltage is in the range of 600V to 1000V. 제1항에 있어서, 상기한 제1반도체형이 P이고 상기한 제2반도체형이 N인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 1, wherein the first semiconductor type is P and the second semiconductor type is N. 제1항에 있어서, 상기한 제1반도체형이 N이고 상기한 제2반도체형이 P인 것을 특징으로 하는 서어지흡수기.The surge absorber according to claim 1, wherein the first semiconductor type is N and the second semiconductor type is P. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920025696A 1991-12-27 1992-12-26 Surge absorber for communication line and surge absorber circuit using same KR930015242A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3358966A JPH05184062A (en) 1991-12-27 1991-12-27 Surge absorber for communication network and surge absorbing circuit employing the absorber
JP91-358966 1991-12-27

Publications (1)

Publication Number Publication Date
KR930015242A true KR930015242A (en) 1993-07-24

Family

ID=18462037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920025696A KR930015242A (en) 1991-12-27 1992-12-26 Surge absorber for communication line and surge absorber circuit using same

Country Status (5)

Country Link
JP (1) JPH05184062A (en)
KR (1) KR930015242A (en)
CA (1) CA2085757A1 (en)
DE (1) DE4244133A1 (en)
GB (1) GB2262848A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017048240A1 (en) * 2015-09-15 2017-03-23 Intel Corporation Silicon controlled rectifier with propagating trigger

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573550A (en) * 1969-03-07 1971-04-06 M & T Chemicals Inc Automatically resetting transient protection device
US3631264A (en) * 1970-02-11 1971-12-28 Sybron Corp Intrinsically safe electrical barrier system and improvements therein
US3904931A (en) * 1973-08-03 1975-09-09 Rca Corp Overvoltage protection circuit
JPS5321395U (en) * 1976-08-02 1978-02-23
SE426002B (en) * 1980-12-23 1982-11-29 Ellemtel Utvecklings Ab DEVICE FOR PROTECTION OF A CIRCUIT IN A TELECOMMUNICATION EQUIPMENT
DE3584239D1 (en) * 1984-12-24 1991-10-31 Nippon Telegraph & Telephone PROTECTIVE CIRCUIT.
JPS62110435A (en) * 1985-11-04 1987-05-21 シ−メンス、アクチエンゲゼルシヤフト Overvoltage protective integrated circuit device of subscriber line
NO870996L (en) * 1986-04-04 1987-10-05 Siemens Ag AA PROTECTOR CONNECTOR CONSUMER CONVERSION.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017048240A1 (en) * 2015-09-15 2017-03-23 Intel Corporation Silicon controlled rectifier with propagating trigger

Also Published As

Publication number Publication date
JPH05184062A (en) 1993-07-23
GB2262848A (en) 1993-06-30
CA2085757A1 (en) 1993-06-28
DE4244133A1 (en) 1993-07-01
GB9226597D0 (en) 1993-02-17

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