KR930014823A - Wafer cleaning / drying method and equipment - Google Patents

Wafer cleaning / drying method and equipment Download PDF

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Publication number
KR930014823A
KR930014823A KR1019910024086A KR910024086A KR930014823A KR 930014823 A KR930014823 A KR 930014823A KR 1019910024086 A KR1019910024086 A KR 1019910024086A KR 910024086 A KR910024086 A KR 910024086A KR 930014823 A KR930014823 A KR 930014823A
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KR
South Korea
Prior art keywords
wafer
cleaning
drying
chamber
ipa
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KR1019910024086A
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Korean (ko)
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KR940008366B1 (en
Inventor
허진석
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문정환
금성일렉트론 주식회사
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Priority to KR1019910024086A priority Critical patent/KR940008366B1/en
Publication of KR930014823A publication Critical patent/KR930014823A/en
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Publication of KR940008366B1 publication Critical patent/KR940008366B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 하나의 챔버내에서 웨이퍼의 세정 및 건조를 수행하도록하며 이물질의 부착이나 물반점 생성으로 웨이퍼가 훼손되는 것을 방지하기 위한 것으로 (가)웨이퍼를 탈이온수(DI워터)에서 최종세정하는 공정과 (나)웨이퍼 표면의 탈이온수층을 IPA층으로 치환시키는 공정과 (다)IPA를 기화시켜 웨이퍼를 건조시키는 공정을 포함하는 웨이퍼 세정/건조방법과 웨이퍼를 하나의 챔버내에서 탈이온수에 세정시킨 후 웨이퍼 표면의 탈이온수를 IPA로 치환시키고 IPA를 기화시켜서 건조시키는 세정/건조장비이다.The present invention is to clean and dry the wafer in one chamber and to prevent the wafer from being damaged due to the attachment of foreign matters or the formation of water spots. (A) A process of final cleaning of the wafer in deionized water (DI water). And (b) replacing the deionized water layer on the wafer surface with an IPA layer, and (c) vaporizing the IPA to dry the wafer, and cleaning the wafer with deionized water in one chamber. It is a cleaning / drying equipment that replaces deionized water on the surface of the wafer with IPA and vaporizes the IPA to dry it.

Description

웨이퍼 세정/건조방법 및 장비Wafer cleaning / drying method and equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 웨이퍼 최종 린스 상태도.1 is a wafer final rinse state diagram of the present invention.

제2도는 본 발명의 웨이퍼 이동 상태도.2 is a wafer transfer state diagram of the present invention.

제3도는 본 발명의 웨이퍼 건조 상태도.3 is a wafer dry state diagram of the present invention.

제4도는 본 발명의 또 다른 실시례인 장비의 개략도.4 is a schematic diagram of equipment which is another embodiment of the present invention.

Claims (12)

웨이퍼를 하나의 챔버내에서 세정하고 건조시키는 방법에 있어서 (가)웨이퍼를 탈이온수(DI워터)에서 최종세정하는 공정과, (나)웨이퍼 표면의 탈이온수층을 IPA층으로 대체시키는 공정과 (다)IPA를 기화시켜 웨이퍼를 건조시키는 공정을 포함하는 웨이퍼 세정/건조방법.In the method of cleaning and drying the wafer in one chamber, (A) final cleaning of the wafer in deionized water (DI water), (B) replacing the deionized water layer on the wafer surface with an IPA layer, and C) Wafer cleaning / drying method comprising vaporizing IPA to dry the wafer. 제1항에 있어서 (나)단계의 공정은 탈이온수 상부에 IPA막을 형성시키고 탈이온수 내에 잠겨있는 웨이퍼를 서서히 IPA막을 통과시켜 위로 이동시키도록 한 것이 특징인 웨이퍼 세정/건조방법.The wafer cleaning / drying method of claim 1, wherein the step (b) is to form an IPA film on the deionized water and to slowly move the wafer submerged in the deionized water through the IPA film. 제1항에 있어서 (나)단계의 공정은 웨이퍼가 잠겨 있는 세정조의 DI 워터를 배수하여 제거하고 IPA를 주입하여 웨이퍼가 잠기게 한 후 IPA를 서서히 배출하여 실현시키는 것이 특징인 웨이퍼 세정/건조방법.The wafer cleaning / drying method according to claim 1, wherein the step (b) is performed by draining and removing the DI water of the cleaning tank in which the wafer is locked and injecting the IPA so that the wafer is locked and gradually draining the IPA. . 제1항에 있어서 (다)단계의 공정은 웨이퍼를 질소분위기내에서 건조시키는 것이 특징인 웨이퍼 세정/건조방법.The wafer cleaning / drying method of claim 1, wherein the step (c) comprises drying the wafer in a nitrogen atmosphere. 제2항에 있어서 (나)단계의 공정에서, 웨이퍼가 잠긴 털이온수 위에 IPA 액체층 및 그 위에 IPA베이퍼(VAPOR)분위기가 되도록하여 웨이퍼를 이동시키는 것이 특징인 웨이퍼 세정/건조방법.The wafer cleaning / drying method according to claim 2, wherein, in the step (b), the wafer is moved so that the wafer is in the IPA liquid layer and the IPA vapor (VAPOR) atmosphere thereon. 제2항 또는 제5항에 있어서 웨이퍼의 상승속도를 초당 1밀리미터 정도로 하는 것을 특징으로하는 웨이퍼 세정/건조방법.The wafer cleaning / drying method according to claim 2 or 5, wherein the rising speed of the wafer is about 1 millimeter per second. 세정조내의 하부에 탈이온수 공급구와 IPA공급구가 설치되고 탈이온수와 IPA배출구가 각각 설치되며, 세정조 하부에 히타가 설치되는 것이 특징인 웨이퍼 세정 및 건조장비Deionized water supply port and IPA supply port are installed in the lower part of the cleaning tank, deionized water and IPA outlet are respectively installed, and the heater is installed in the lower part of the cleaning tank. 챔버(1)하부 좌우에 보조챔버(2)를 고차간 세정실(30)과 웨이퍼 건조실(4)과 상기 세정실에서 상기 건조실로 웨이퍼를 이송하는 운송부와 상기 세정실(30)과 건조실사이를 열고 닫는 격리판(5)을 구비하는 웨이퍼의 세정 및 건조장비.On the lower left and right of the chamber 1, the auxiliary chamber 2 is placed between the cleaning chamber 30, the wafer drying chamber 4, and the transport unit for transferring wafers from the cleaning chamber to the drying chamber, and between the cleaning chamber 30 and the drying chamber. Equipment for cleaning and drying the wafer having a separator (5) to open and close the opening. 제8항에 있어서 상기 건조실(4) 내벽에 한개 이상의 노들(11)를 부착하여 구성된 것을 특징으로하는 웨이퍼의 세정 및 건조장비.9. The apparatus for cleaning and drying a wafer according to claim 8, wherein at least one furnace (11) is attached to an inner wall of the drying chamber (4). 제8항에 있어서 상기 보조챔버(2)의 출구에 개폐용 셧터(6)를 부착하여 구성된 것을 특징으로하는 웨이퍼의 세정 및 건조장비.9. The apparatus for cleaning and drying a wafer according to claim 8, wherein an opening and closing shutter (6) is attached to the outlet of the auxiliary chamber (2). 제8항에 있어서 상기 보조챔버(2) 하부에 히터(7)를 구성한 것을 특징으로하는 웨이퍼의 세정 및 건조방법.9. The method of cleaning and drying a wafer according to claim 8, wherein a heater (7) is formed under the auxiliary chamber (2). 제8항에 있어서 상기 세정실 하부에 액체 주입구 및 배출구가 형성된 것을 특징으로하는 웨이퍼의 세정 및 건조장비.The wafer cleaning and drying equipment of claim 8, wherein a liquid inlet and an outlet are formed under the cleaning chamber. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910024086A 1991-12-24 1991-12-24 Cleaning and drying method and processing apparatus therefor KR940008366B1 (en)

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Application Number Priority Date Filing Date Title
KR1019910024086A KR940008366B1 (en) 1991-12-24 1991-12-24 Cleaning and drying method and processing apparatus therefor

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Application Number Priority Date Filing Date Title
KR1019910024086A KR940008366B1 (en) 1991-12-24 1991-12-24 Cleaning and drying method and processing apparatus therefor

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KR930014823A true KR930014823A (en) 1993-07-23
KR940008366B1 KR940008366B1 (en) 1994-09-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100391225B1 (en) * 2001-04-27 2003-07-12 주식회사 한택 Apparatus and Method for Treatment a Surface of Semiconductor Substrate
KR100766343B1 (en) * 2006-05-24 2007-10-11 세메스 주식회사 Method for cleaning and drying wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100391225B1 (en) * 2001-04-27 2003-07-12 주식회사 한택 Apparatus and Method for Treatment a Surface of Semiconductor Substrate
KR100766343B1 (en) * 2006-05-24 2007-10-11 세메스 주식회사 Method for cleaning and drying wafers

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Publication number Publication date
KR940008366B1 (en) 1994-09-12

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