KR930007017A

KR930007017A - Semiconductor laser diode manufacturing method

Info

Publication number: KR930007017A
Application number: KR1019910017102A
Authority: KR
Inventors: 임진혁
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1991-09-30
Filing date: 1991-09-30
Publication date: 1993-04-22

Abstract

본 발명은 반도체 레이저 다이오드에 있어서, 전류제한층(7)에 V-채널을 형성하고 미러면 부근의 전류제한층(7)을 에칭 제거하여 메사형태를 형성하고, n형 클래드층(4)과 n형 캡층(3)사이에 활성층(5)과 동일한 금속 조성비를 갖추어 옵티컬 커플링시켜 상하 양방향의 빔 사이즈르 증가시켜 COD레벨을 향상시키고 비점수차를 개선하는 특징을 갖는 것으로 그 제조 공정은 p형 기판(9)위에 전류제한층(7)을 성장시켜 p형 기판의 소정의 깊이까지 식각하여 V-채널을 형성하고 미러면 부근의 전류제한층(7)을 에칭제거하여 메사형태를 형성하는 공정과 p형 클래드층(6), 활성층(5), n형 클래드층(4), 웨이브가이드층(10), n형 캡층(3)을 차례로 형성하고 전극을 형성하는 공정으로 반도체 레이저 다이오드를 제조하는 방법에 관한 것이다.In the semiconductor laser diode, the V-channel is formed in the current limiting layer 7, the current limiting layer 7 near the mirror surface is etched away to form a mesa, and the n-type cladding layer 4 It has the same metal composition ratio as the active layer 5 between the n-type cap layer 3 and optical coupling to increase the beam size in both up and down directions to improve the COD level and improve the astigmatism. A process of growing a current limiting layer 7 on a substrate 9 to etch to a predetermined depth of a p-type substrate to form a V-channel, and etching and removing the current limiting layer 7 near the mirror surface to form a mesa shape. And p-type cladding layer 6, active layer 5, n-type cladding layer 4, waveguide layer 10, n-type capping layer 3, and then forming an electrode It is about how to.

Description

Semiconductor laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 레이저 다이오드의 제조공정 단면도,3 is a cross-sectional view of the manufacturing process of the laser diode of the present invention,

제4도는 본 발명의 레이저 다이오드 동작 개념도,4 is a conceptual diagram of the operation of the laser diode of the present invention;

제5도는 본 발명의 레이저 다이오드 구조의 사시도.5 is a perspective view of the laser diode structure of the present invention.

Claims

After the current limiting layer is grown on the substrate of the first conductivity type to form a V-channel in the current limiting layer and the mesa structure with the mirrors removed on both sides, the clad layer, the active layer, and the second conductivity type of the first conductivity type are formed. After laminating a cladding layer of lamination, laminating a waveguide layer on the cladding layer of the second conductive type, and forming a second conductive layer and an electrode, the laser oscillated from the active layer is guided to the waveguide layer and emitted to the outside. Method for manufacturing a semiconductor laser diode characterized in that.

The method of manufacturing a semiconductor laser diode according to claim 1, wherein the wave guide layer has the same metal composition ratio as that of the active layer and the wave guide layer on the mirror surface is equal to the height of the active layer when the wave guide worm is formed.

※ Note: The disclosure is based on the initial application.