KR930006854A - Method of manufacturing lenticular mask - Google Patents

Method of manufacturing lenticular mask Download PDF

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Publication number
KR930006854A
KR930006854A KR1019910016826A KR910016826A KR930006854A KR 930006854 A KR930006854 A KR 930006854A KR 1019910016826 A KR1019910016826 A KR 1019910016826A KR 910016826 A KR910016826 A KR 910016826A KR 930006854 A KR930006854 A KR 930006854A
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KR
South Korea
Prior art keywords
photoresist pattern
substrate
photoresist
film
light
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Application number
KR1019910016826A
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Korean (ko)
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KR940008361B1 (en
Inventor
유상용
손정민
박한수
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019910016826A priority Critical patent/KR940008361B1/en
Publication of KR930006854A publication Critical patent/KR930006854A/en
Application granted granted Critical
Publication of KR940008361B1 publication Critical patent/KR940008361B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 렌즈형 마스크 제조방법에 관한 것으로, 투명지질의 기판에 비투광성 금속물질을 코팅하고 포토레지스트를 도포한후 노광, 현상하여 레지스트패턴을 형성하며 이를 마스크로 비투광성 금속물을 에칭하여 광차단막을 형성하고, 상기 기판 전면에 새로운 레지스트를 도포한후, 기판의 배면에서 마스크를 이용하여 노광처리하여 포토레지스트패턴을 형성하고 상기 포토레지스트패턴을 열과 빛으로 리플로우시켜 광차단막 사이의 공간부에 렌즈형의 투명막을 형성하는 것을 특징으로 한다.The present invention relates to a method of manufacturing a lens-type mask, coating a non-translucent metal material on a substrate of transparent lipid, then applying a photoresist, and then exposed and developed to form a resist pattern, and etching the non-transparent metal material with a mask to light After forming a blocking film and applying a new resist on the entire surface of the substrate, a photoresist pattern is formed by exposing with a mask on the back surface of the substrate, and the photoresist pattern is reflowed with heat and light to form a space between the light blocking films. It is characterized in that a lenticular transparent film is formed on the substrate.

따라서 마스크를 통과한 빛을 투명막의 렌즈역할로 인하여 광차단막 엣지부근의 회절광을 투명막 중앙으로 집속시킴으로써 콘트라스트를 향상시킬 수 있어 고해상도를 달성하여 64M급 이상의 고집적 메모리 제작이 가능하다.Therefore, the contrast can be improved by focusing diffracted light near the edge of the light-blocking film to the center of the transparent film due to the role of the lens of the transparent film, thereby achieving high resolution and making a highly integrated memory of 64M or more.

Description

렌즈형 마스크 제조방법Method of manufacturing lenticular mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도(A)내지 제3도(F)는 본 발명에 의한 렌즈형 마스크의 제조 공정순서를 나타낸 단면도,3 (A) to 3 (F) are sectional views showing the manufacturing process procedure of the lens-type mask according to the present invention;

제4도는 본 발명에 의한 렌즈형 마스크구조 및 웨이퍼에 노광시 회절현상, 웨이퍼상의 광강도 프로파일을 나타낸 도면이다.4 is a diagram showing a lenticular mask structure and diffraction phenomenon upon exposure to a wafer and a light intensity profile on a wafer according to the present invention.

Claims (4)

투명재질로된 기판(1)상에 비투광성 금속물질(2)을 코팅하는 공정과; 상기 코팅공정후 포토레지스트를 도포하고 마스터 마스크를 사용하여 상기 포토레지스트막을 노광후 현상하여 포토레지스트패턴(3)을 형성하는 공정; 상기 포토레지스터패턴(3)을 마스크로 하여 상기 비투광성 금속물질(2)을 에칭한후 상기 포토레지스트패턴(3)을 제거하여 광차단막(2a)을 형성하는 공정; 상기 기판(1)전면에 포토레지스트(4)를 도포한후 기판(1)의 배면에서 마스터 마스크(5)를 이용해서 노광처리하여 포토레지스트패턴(4a')를 형성하는 공정; 상기 포토레지스트패턴(4a')을 리플로우시켜 상기 광차단막(2a)사이의 공간부에 렌즈형상의 투명막(4a)을 형성하는 공정을 구비한 것을 특징으로 하는 렌즈형 마스크 제조방법.Coating a non-transparent metal material (2) on a substrate (1) made of a transparent material; Applying a photoresist after the coating process and developing the photoresist film after exposure using a master mask to form a photoresist pattern (3); Etching the non-translucent metal material (2) using the photoresist pattern (3) as a mask, and then removing the photoresist pattern (3) to form a light blocking film (2a); Applying a photoresist (4) to the entire surface of the substrate (1) and then exposing the photoresist pattern (4a ') on the back surface of the substrate (1) using a master mask (5); And reflowing the photoresist pattern (4a ') to form a lens-shaped transparent film (4a) in the space between the light blocking films (2a). 제1항에 있어서, 상기 포토레지스트패턴(4a')은 리플로우 시킬 때 흘러내려 광차단막(2a)을 덮지않도록 광착단막(2a)과 일정거리(W)를 두고 형성되는 것을 특징으로 하는 렌즈형 마스크 제조방법.The lens type according to claim 1, wherein the photoresist pattern 4a 'is formed at a predetermined distance W from the deposition stopper film 2a so as not to flow down to cover the light shielding film 2a when reflowed. Mask manufacturing method. 제1항에 있어서, 상기 렌즈형상의 투명막(4a)은 네가티브형의 포토레지스트로 형성되는 것을 특징으로 하는 렌즈형 마스크 제조방법.The method of claim 1, wherein the lens-shaped transparent film (4a) is formed of a negative photoresist. 제1항에 있어서, 상기 렌즈형상의 투명막(4a)은 상기 포토레지스트패턴(4a')을 열 또는 빛을 이용하여 리플로우시켜 형성됨을 특징으로 하는 렌즈형 마스크의 제조방법.The method of claim 1, wherein the lens-shaped transparent film (4a) is formed by reflowing the photoresist pattern (4a ') using heat or light. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910016826A 1991-09-26 1991-09-26 Manufacturing method of lens type mask KR940008361B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910016826A KR940008361B1 (en) 1991-09-26 1991-09-26 Manufacturing method of lens type mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910016826A KR940008361B1 (en) 1991-09-26 1991-09-26 Manufacturing method of lens type mask

Publications (2)

Publication Number Publication Date
KR930006854A true KR930006854A (en) 1993-04-22
KR940008361B1 KR940008361B1 (en) 1994-09-12

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Application Number Title Priority Date Filing Date
KR1019910016826A KR940008361B1 (en) 1991-09-26 1991-09-26 Manufacturing method of lens type mask

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355417B1 (en) * 2000-04-25 2002-10-11 안지양 The method of forming circuit on circuit board by laser and laser mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355417B1 (en) * 2000-04-25 2002-10-11 안지양 The method of forming circuit on circuit board by laser and laser mask

Also Published As

Publication number Publication date
KR940008361B1 (en) 1994-09-12

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