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Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019910009645ApriorityCriticalpatent/KR930001342A/en
Publication of KR930001342ApublicationCriticalpatent/KR930001342A/en
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 의한 위상쉬프트 마스크 공정단면도.2 is a cross-sectional view of a phase shift mask process according to the present invention.
Claims (2)
수정기판(11)위에 금속층(21)을 형성하여 패터닝하는 공정과, 상기 금속층(21)이 패터닝된 전 표면에 광투과성막(22)을 증착하는 공정을 포함하는 위상쉬프트 마스크 제조방법.Forming and patterning a metal layer (21) on the quartz substrate (11), and a process of manufacturing a phase shift mask comprising the step of depositing a light-transmitting film (22) on the entire surface of the patterned metal layer (21).제1항에 있어서 광투과성막(22)은 0∼0.5㎛의 CVD산화막에서 스퍼터링된 산화막을 사용하는 위상 쉬프트 마스크 제조방법.The method of manufacturing a phase shift mask according to claim 1, wherein the light transmissive film (22) uses an oxide film sputtered from a CVD oxide film of 0 to 0.5 mu m.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.