KR930001305A - Magnetron Sputtering Device - Google Patents

Magnetron Sputtering Device Download PDF

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Publication number
KR930001305A
KR930001305A KR1019920010195A KR920010195A KR930001305A KR 930001305 A KR930001305 A KR 930001305A KR 1019920010195 A KR1019920010195 A KR 1019920010195A KR 920010195 A KR920010195 A KR 920010195A KR 930001305 A KR930001305 A KR 930001305A
Authority
KR
South Korea
Prior art keywords
magnetron sputtering
wafer
target
shield
sputtering device
Prior art date
Application number
KR1019920010195A
Other languages
Korean (ko)
Inventor
유끼야스 스가노
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR930001305A publication Critical patent/KR930001305A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Abstract

내용 없음No content

Description

마그네트론 스패터링장치Magnetron Sputtering Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 제1실시예의 개략구성 단면도.1 is a schematic sectional view of the first embodiment.

제2도는 타겟직경의 한정이유의 설명도.2 is an explanatory diagram of the reason for limitation of the target diameter.

제3도는 타겟직경의 한정이유의 설명도.3 is an explanatory view of the reason for limitation of the target diameter.

제4도는 제2실시예의 개략구성 단면도.4 is a schematic sectional view of the second embodiment.

Claims (2)

웨이퍼를 지지하는 웨이퍼홀더와 타겟과의 사이에, 타겟입자의 일부를 컷트하는 차폐기를 설치한 마그네트론 스패티링 장치에 있어서, 상기 타겟을 상기 웨이퍼의 직경의 1배이상 1.4배 이하로 형성한 것을 특징으로 하는 마그네트론 스패터링장치.A magnetron spattering device provided with a shielding device for cutting a portion of target particles between a wafer holder for supporting a wafer and a target, wherein the target is formed at least 1 times 1.4 times the diameter of the wafer. Magnetron sputtering device characterized in that. 웨이퍼를 지지하는 웨이퍼홀더와 타겟과의 사이에, 타겟입자의 일부를 컷트하는 차폐기를 설치한 마그네트론 스패터링 장치에 있어서, 상기 차폐기에 평행광선을 조사함으로써 상기 웨이퍼의 성막면상에 생기는 그림자가 이동하는 상태로, 이 차폐기를 이동하는 구동부를 이 마그네트론 스패터링장치에 설치한 것을 특징으로 하는 마그네트론 스패터링장치.In a magnetron sputtering device provided with a shield for cutting a part of target particles between a wafer holder for supporting a wafer and a target, a shadow generated on the film formation surface of the wafer is moved by irradiating parallel light to the shield. The magnetron sputtering apparatus characterized by the above-mentioned. The drive part which moves this shield is provided in this magnetron sputtering apparatus. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920010195A 1991-06-19 1992-06-12 Magnetron Sputtering Device KR930001305A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-174621 1991-06-19
JP3174621A JPH04371578A (en) 1991-06-19 1991-06-19 Magnetron sputtering device

Publications (1)

Publication Number Publication Date
KR930001305A true KR930001305A (en) 1993-01-16

Family

ID=15981797

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010195A KR930001305A (en) 1991-06-19 1992-06-12 Magnetron Sputtering Device

Country Status (3)

Country Link
US (1) US5393398A (en)
JP (1) JPH04371578A (en)
KR (1) KR930001305A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960002532A (en) * 1994-06-29 1996-01-26 김광호 Sputtering device
US5516403A (en) * 1994-12-16 1996-05-14 Applied Materials Reversing orientation of sputtering screen to avoid contamination
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
JP3505067B2 (en) * 1997-07-17 2004-03-08 松下電器産業株式会社 Light amount correction filter manufacturing apparatus and color picture tube manufacturing method using light amount correction filter manufactured by this apparatus
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6036821A (en) * 1998-01-29 2000-03-14 International Business Machines Corporation Enhanced collimated sputtering apparatus and its method of use
US6086727A (en) 1998-06-05 2000-07-11 International Business Machines Corporation Method and apparatus to improve the properties of ion beam deposited films in an ion beam sputtering system
FR2783001B1 (en) * 1998-09-04 2000-11-24 Essilor Int PROCESS FOR THE VACUUM PROCESSING OF ANY CURVED SUBSTRATE, ESPECIALLY A GLASSES GLASS, AND A COVER FOR THE IMPLEMENTATION OF SUCH A PROCESS
US6783635B2 (en) 1999-12-09 2004-08-31 International Business Machines Corporation Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance
JP2002069634A (en) * 2000-08-29 2002-03-08 Canon Inc Thin film forming method and equipment for the same
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
DE10062713C1 (en) * 2000-12-15 2002-09-05 Zeiss Carl Process for coating substrates and mask holders
US6733640B2 (en) * 2002-01-14 2004-05-11 Seagate Technology Llc Shutter assembly having optimized shutter opening shape for thin film uniformity
KR100927375B1 (en) * 2007-09-04 2009-11-19 주식회사 유진테크 Exhaust unit, exhaust control method using same, substrate processing apparatus including the exhaust unit
US20150020974A1 (en) * 2013-07-19 2015-01-22 Psk Inc. Baffle and apparatus for treating surface of baffle, and substrate treating apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867016A (en) * 1981-10-19 1983-04-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin film
JPS61243167A (en) * 1985-04-17 1986-10-29 Anelva Corp Sputtering device
JPS627855A (en) * 1985-07-05 1987-01-14 Hitachi Ltd Sputtering device
JPS6217173A (en) * 1985-07-15 1987-01-26 Ulvac Corp Flat plate magnetron sputtering device
JPS63274766A (en) * 1987-05-06 1988-11-11 Tokuda Seisakusho Ltd Sputtering device
JPH0660391B2 (en) * 1987-06-11 1994-08-10 日電アネルバ株式会社 Sputtering equipment
US4960072A (en) * 1987-08-05 1990-10-02 Ricoh Company, Ltd. Apparatus for forming a thin film
US4988424A (en) * 1989-06-07 1991-01-29 Ppg Industries, Inc. Mask and method for making gradient sputtered coatings
DE69129081T2 (en) * 1990-01-29 1998-07-02 Varian Associates Device and method for precipitation by a collimator
JPH04187765A (en) * 1990-11-21 1992-07-06 Hitachi Ltd Deposition preventive plate for magnetron sputtering system
JPH04187766A (en) * 1990-11-22 1992-07-06 Tdk Corp Magnetic circuit device for magnetron sputtering system

Also Published As

Publication number Publication date
JPH04371578A (en) 1992-12-24
US5393398A (en) 1995-02-28

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application