KR920701531A - 단결정 제조장치 - Google Patents

단결정 제조장치

Info

Publication number
KR920701531A
KR920701531A KR1019910701501A KR910701501A KR920701531A KR 920701531 A KR920701531 A KR 920701531A KR 1019910701501 A KR1019910701501 A KR 1019910701501A KR 910701501 A KR910701501 A KR 910701501A KR 920701531 A KR920701531 A KR 920701531A
Authority
KR
South Korea
Prior art keywords
single crystal
raw material
crucible
storage container
melt
Prior art date
Application number
KR1019910701501A
Other languages
English (en)
Korean (ko)
Inventor
요시오 모오리
겐지 아라끼
Original Assignee
야마시로 요시나리
닛뽕 고오깡 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마시로 요시나리, 닛뽕 고오깡 가부시기가이샤 filed Critical 야마시로 요시나리
Publication of KR920701531A publication Critical patent/KR920701531A/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
KR1019910701501A 1990-03-02 1991-03-01 단결정 제조장치 KR920701531A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-51326 1990-03-02
JP2051326A JPH03252386A (ja) 1990-03-02 1990-03-02 単結晶製造装置
PCT/JP1991/000273 WO1991013192A1 (en) 1990-03-02 1991-03-01 Single crystal production apparatus

Publications (1)

Publication Number Publication Date
KR920701531A true KR920701531A (ko) 1992-08-12

Family

ID=12883798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910701501A KR920701531A (ko) 1990-03-02 1991-03-01 단결정 제조장치

Country Status (4)

Country Link
JP (1) JPH03252386A (US07923587-20110412-C00001.png)
KR (1) KR920701531A (US07923587-20110412-C00001.png)
DE (1) DE4190411T1 (US07923587-20110412-C00001.png)
WO (1) WO1991013192A1 (US07923587-20110412-C00001.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
US5997234A (en) * 1997-04-29 1999-12-07 Ebara Solar, Inc. Silicon feed system
JP5145014B2 (ja) * 2007-03-29 2013-02-13 シャープ株式会社 固体材料処理装置
US10202704B2 (en) 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
EP2699716B1 (en) * 2011-04-20 2019-12-18 GTAT IP Holding LLC Side feed system for czochralski growth of silicon ingots
CN104264229B (zh) * 2014-10-09 2016-08-24 河北晶龙阳光设备有限公司 一种单晶炉在线掺杂装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523580Y2 (US07923587-20110412-C00001.png) * 1987-02-27 1993-06-16
JPH01282194A (ja) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd 単結晶製造方法

Also Published As

Publication number Publication date
DE4190411T1 (US07923587-20110412-C00001.png) 1992-05-14
JPH03252386A (ja) 1991-11-11
WO1991013192A1 (en) 1991-09-05

Similar Documents

Publication Publication Date Title
DE4106589C2 (de) Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
DE69205253T2 (de) Vorrichtung für die Zuführung von granuliertem Schüttgut für einen Halbleitendeinkristallziehungsapparat.
DE69201292T2 (de) Vorrichtung zur Einkristallziehung.
KR920701531A (ko) 단결정 제조장치
DE2937452A1 (de) Verfahren zum herstellen einer schalenform fuer die erzeugung eines einkristalls und nach dem verfahren hergestellte form
GB1251538A (US07923587-20110412-C00001.png)
KR900004972A (ko) 실리콘 단결정의 제조방법 및 제조장치
US2156316A (en) Apparatus for making fibrous materials
US3582287A (en) Seed pulling apparatus having diagonal feed and gas doping
US3241925A (en) Apparatus for growing solid homogeneous compositions
DE50307712D1 (de) Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation
SU436514A3 (US07923587-20110412-C00001.png)
GB809991A (en) Apparatus for filling sheathed electrical resistance elements with granular insulating material
US7828004B2 (en) Method and device for storing chemical products in a container
JPH03290392A (ja) 単結晶製造装置
US2697854A (en) Process and apparatus for making elongated bars, blocks, and the like
JPS56109893A (en) Single crystal manufacturing apparatus
CN208514864U (zh) 一种注塑机进料装置
US1078917A (en) Bolting, sifting, and grading machine.
KR920701530A (ko) 실리콘 단결정의 제조장치
GB861888A (en) Improvements in or relating to the production of shaped products by melt spinning
US3388887A (en) Device for molding solid thermoplastic bodies
CN207614459U (zh) 一种实验室用二次过滤装置
JPS6395195A (ja) 結晶引上げ方法及び装置
KR940007231A (ko) 단결정 원료공급방법

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid