KR920017280A - Ideal Vertical CCD Structure - Google Patents

Ideal Vertical CCD Structure Download PDF

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Publication number
KR920017280A
KR920017280A KR1019910002373A KR910002373A KR920017280A KR 920017280 A KR920017280 A KR 920017280A KR 1019910002373 A KR1019910002373 A KR 1019910002373A KR 910002373 A KR910002373 A KR 910002373A KR 920017280 A KR920017280 A KR 920017280A
Authority
KR
South Korea
Prior art keywords
vertical ccd
ccd structure
ideal vertical
photodiodes
ideal
Prior art date
Application number
KR1019910002373A
Other languages
Korean (ko)
Other versions
KR940004273B1 (en
Inventor
이서규
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910002373A priority Critical patent/KR940004273B1/en
Priority to DE4203825A priority patent/DE4203825C2/en
Priority to JP4025131A priority patent/JP2592193B2/en
Publication of KR920017280A publication Critical patent/KR920017280A/en
Application granted granted Critical
Publication of KR940004273B1 publication Critical patent/KR940004273B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음No content

Description

이상 수직 CCD구조Ideal Vertical CCD Structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 제1도에서 A-A의 포텐셜 상태도, 제3도는 본 발명의 VCCD평면 구조도, 제4도는 제3도에서 채널 스톱 영역 구조도.2 is a potential state diagram of A-A in FIG. 1, FIG. 3 is a VCCD planar structure diagram of the present invention, and FIG. 4 is a channel stop region structure diagram in FIG.

Claims (2)

배리어 영역을 포함하는 폴리영역이 반복되게 구성시켜 2상 클럭킹으로 VCCD부분을 동작토록 한 것을 특징으로 하는 이상 수직 CCD구조.An ideal vertical CCD structure, wherein the poly region including the barrier region is repeatedly configured to operate the VCCD portion by two-phase clocking. 제1항에 있어서, 하나의 폴리영역은 2개의 포토다이오드를 공유하여 두 개의 포토다이오의 신호 전하들이 동시에 전달되도록 구성한 것을 특징으로 하는 이상 수직 CCD구조.The ideal vertical CCD structure of claim 1, wherein one poly region is configured to share two photodiodes so that signal charges of two photodiodes are simultaneously transferred. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019910002373A 1991-02-12 1991-02-12 Different type vertical ccd structure KR940004273B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019910002373A KR940004273B1 (en) 1991-02-12 1991-02-12 Different type vertical ccd structure
DE4203825A DE4203825C2 (en) 1991-02-12 1992-02-10 CCD image sensor
JP4025131A JP2592193B2 (en) 1991-02-12 1992-02-12 CCD image element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002373A KR940004273B1 (en) 1991-02-12 1991-02-12 Different type vertical ccd structure

Publications (2)

Publication Number Publication Date
KR920017280A true KR920017280A (en) 1992-09-26
KR940004273B1 KR940004273B1 (en) 1994-05-19

Family

ID=19311056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002373A KR940004273B1 (en) 1991-02-12 1991-02-12 Different type vertical ccd structure

Country Status (3)

Country Link
JP (1) JP2592193B2 (en)
KR (1) KR940004273B1 (en)
DE (1) DE4203825C2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4329838B4 (en) * 1993-09-03 2005-09-22 Hynix Semiconductor Inc., Ichon Solid-state image sensor
DE4329837B4 (en) * 1993-09-03 2005-12-29 Magnachip Semiconductor, Ltd. Method of manufacturing a silicon semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55163960A (en) * 1979-06-08 1980-12-20 Nec Corp Electric charge transfer pickup unit
JPS58200574A (en) * 1982-05-18 1983-11-22 Matsushita Electric Ind Co Ltd Solid state image pickup device
JPS6156583A (en) * 1984-08-27 1986-03-22 Sharp Corp Solid-state image pickup device
JPS61114663A (en) * 1984-11-09 1986-06-02 Sharp Corp Solid-state image pickup device
JP2508668B2 (en) * 1986-11-10 1996-06-19 ソニー株式会社 Charge transfer device
JPH01241161A (en) * 1988-03-23 1989-09-26 Hitachi Ltd Solid-state image sensing device

Also Published As

Publication number Publication date
DE4203825C2 (en) 2000-02-24
JP2592193B2 (en) 1997-03-19
JPH07170459A (en) 1995-07-04
KR940004273B1 (en) 1994-05-19
DE4203825A1 (en) 1992-08-13

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