KR920012261A - Epoxy Resin Compositions for Semiconductor Device Encapsulation - Google Patents

Epoxy Resin Compositions for Semiconductor Device Encapsulation Download PDF

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Publication number
KR920012261A
KR920012261A KR1019900022920A KR900022920A KR920012261A KR 920012261 A KR920012261 A KR 920012261A KR 1019900022920 A KR1019900022920 A KR 1019900022920A KR 900022920 A KR900022920 A KR 900022920A KR 920012261 A KR920012261 A KR 920012261A
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South Korea
Prior art keywords
epoxy resin
phenol
resin
novolak
alkyl group
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KR1019900022920A
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Korean (ko)
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KR940001071B1 (en
Inventor
이상선
진일교
이인호
김경신
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김충세
고려화학 주식회사
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Publication of KR920012261A publication Critical patent/KR920012261A/en
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

내용 없음No content

Description

반도체 소자 봉지용 에폭시 수지 조성물Epoxy Resin Compositions for Semiconductor Device Encapsulation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (4)

(A) 하기식(Ⅰ), (Ⅱ) 또는 (Ⅲ)으로 표시되는 1분자내 적어도 3개 이상의 에폭시기를 가진 다관능 에폭시중 하나, 페놀 노볼락 수지 또는 크레졸 노볼락 수지와 하기식(Ⅳ)로 표시되는 실리콘 변성이미드를 반응시켜 제조된 실리콘이미드 변성다관능 에폭시 수지, (B) 하기식(Ⅴ)로 표시되는 알킬페놀수지 단독의 또는 이것과 노볼락 페놀수지와 혼합된 경화제, (C) 무기충전제, (D)경화 촉진제 및 기타 첨가제로 구성됨을 특징으로 하는 반도체 봉지용 에폭시 수지 조성물.(A) One of the polyfunctional epoxy which has at least 3 or more epoxy groups in 1 molecule represented by following formula (I), (II), or (III), a phenol novolak resin or cresol novolak resin, and following formula (IV) A silicone imide modified polyfunctional epoxy resin prepared by reacting a silicone-modified imide represented by (B), a curing agent alone or mixed with an alkylphenol resin represented by the following formula (V), and a novolak phenol resin, ( C) An epoxy resin composition for semiconductor encapsulation, comprising an inorganic filler, (D) a curing accelerator and other additives. 여기에서, n은 1내지 5의 정수이다.Here, n is an integer of 1-5. 상기 식(Ⅳ)에서 R은 탄소수가 1∼3인 선형알킬그룹 또는 브렌치된 알킬그룹이고 R1∼R3는 서로 같거나 독립해서 다를 수 있는 것으로 탄소수가 1∼4개의 알킬기이거나 페닐, 톨루일 또는 나프타닐기이며, n은 20∼200이다.In formula (IV), R is a linear alkyl group or branched alkyl group having 1 to 3 carbon atoms and R 1 to R 3 may be the same as or different from each other, and may be an alkyl group having 1 to 4 carbon atoms or phenyl or toluyl. Or a naphthanyl group, n is 20-200. 상기식(Ⅴ)에서 A1은 수소 또는 메틸그룹이고, A2∼A5는 서로 같거나 독립해서 다룰수 있는 것으로 수소 또는 탄소수가 1∼3인 알킬기, 페놀, 톨루일 또는 나프타닐기이며, m은 1∼5의 정수로 반복 단위를 의미한다.In Formula (V), A 1 is hydrogen or a methyl group, and A 2 to A 5 may be the same or independently treated as hydrogen or an alkyl group having 1 to 3 carbon atoms, a phenol, toluyl or naphtanyl group, and m is An integer of 1 to 5 means a repeating unit. 제1항에 있어서, 상기 실리콘 이미드 변성 다관능 에폭시 수지가 최종 조성물 기준으로 5∼20중량%, 상기 알킬 페놀 단독 또는 노볼락 페놀 수지와 혼합된 경화제 5∼15중량%, 무기 충전제가 50∼85중량%, 그리고 경화촉진제가 0.1∼3중량%로 구성됨을 특징으로 하는 반도체 소자 봉지용 에폭시 수지 조성물.According to claim 1, wherein the silicone imide modified polyfunctional epoxy resin is 5 to 20% by weight based on the final composition, 5 to 15% by weight of the curing agent mixed with the alkyl phenol alone or novolak phenol resin, 50 to inorganic fillers Epoxy resin composition for semiconductor element encapsulation, characterized in that 85% by weight, and the curing accelerator is composed of 0.1 to 3% by weight. 제1항에 있어서, 상기 실리콘 이미드 변성 다관능 에폭시수지 대 상기 알킬페놀의 당량비가 1 : 0.5∼1 : 2.0인 것을 특징으로 하는 반도체 소자 봉지용 에폭시 수지 조성물.The epoxy resin composition for semiconductor element encapsulation according to claim 1, wherein the equivalent ratio of the silicon imide-modified polyfunctional epoxy resin to the alkylphenol is 1: 0.5 to 1: 2.0. 제1항에 있어서, 상기 알킬 페놀과 상기 노볼락 페놀수지가 혼용되어 사용될 경우 그 사용 당량비가 1:0.3∼1:0.7인 것을 특징으로 하는 반도체 소자 봉지용 에폭시 수지 조성물.The epoxy resin composition for semiconductor element encapsulation according to claim 1, wherein when the alkyl phenol and the novolak phenol resin are used in combination, their equivalent ratio is 1: 0.3 to 1: 0.7. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900022920A 1990-12-31 1990-12-31 Epoxy resin composition for encapsulating semiconductor KR940001071B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900022920A KR940001071B1 (en) 1990-12-31 1990-12-31 Epoxy resin composition for encapsulating semiconductor

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Application Number Priority Date Filing Date Title
KR1019900022920A KR940001071B1 (en) 1990-12-31 1990-12-31 Epoxy resin composition for encapsulating semiconductor

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KR920012261A true KR920012261A (en) 1992-07-25
KR940001071B1 KR940001071B1 (en) 1994-02-12

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KR940001071B1 (en) 1994-02-12

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