KR880011912A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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Publication number
KR880011912A
KR880011912A KR1019880002703A KR880002703A KR880011912A KR 880011912 A KR880011912 A KR 880011912A KR 1019880002703 A KR1019880002703 A KR 1019880002703A KR 880002703 A KR880002703 A KR 880002703A KR 880011912 A KR880011912 A KR 880011912A
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KR
South Korea
Prior art keywords
resin
represented
general formula
epoxy resin
semiconductor device
Prior art date
Application number
KR1019880002703A
Other languages
Korean (ko)
Other versions
KR930004249B1 (en
Inventor
시오하라도시오
가즈또시 도미요시
Original Assignee
고사까 유따로
신에쓰 가가꾸 고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 고사까 유따로, 신에쓰 가가꾸 고오교 가부시끼가이샤 filed Critical 고사까 유따로
Publication of KR880011912A publication Critical patent/KR880011912A/en
Application granted granted Critical
Publication of KR930004249B1 publication Critical patent/KR930004249B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon

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  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

내용 없음No content

Description

수지 봉지형 반도체 장치Resin-sealed semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 수지 봉지 반도체 장치의 일 예를 나타내는 것으로서, (A)는 정면도, (B)는 단면도, (C)는 휨이 발생한 반도체 장치의 단면도.1 shows an example of a resin-encapsulated semiconductor device, (A) is a front view, (B) is a sectional view, and (C) is a sectional view of a semiconductor device in which warpage has occurred.

제2도는 수지 봉지 반도체 장치의 다른 예를 나타내는 것으로서, (A)는 사시도, (B)는 휨이 발생한 반도체 장치의 단면도.2 shows another example of a resin-encapsulated semiconductor device, (A) is a perspective view, and (B) is a cross-sectional view of a semiconductor device in which warping occurs.

Claims (1)

(A)하기 일반식(1)(A) General formula (1) (식 중, R1은 서로 동일하거나 또는 상이한 것으로서, 탄소수 1-10의 1가 탄화수소기를 나타내고, X는 할로겐 원자를 나타내며, 1은 1또는 2의 정수이고, m 및 n은 각각 0-2의 정수를 나타내고, 1+m+n+＜5임)로 표시되는 트리페놀 알칸형 에폭시 수지 또는 그의 중합체를 주성분으로 하는 에폭시수지와, (B)치환 및 비치환 노볼락형 페놀 수지와 하기 일반식(2)(Wherein R 1 is the same or different from each other, represents a monovalent hydrocarbon group having 1 to 10 carbon atoms, X represents a halogen atom, 1 is an integer of 1 or 2, m and n are each represented by 0-2 Epoxy resin containing a triphenol alkane type epoxy resin represented by an integer and represented by 1 + m + n + <5, or a polymer thereof as a main component, (B) substituted and unsubstituted novolak-type phenol resins, and the following general formula ( 2) (식 중, R1,X,1,m 및 n은 상기 정의한 바와 같음)로 표시되는 트리페놀알칸으로부터 선택되는 수지를 주성분으로 하는 경화제와, (C)알케닐기 함유 노볼락 수지와 하기 일반식(3)(Wherein R 1 , X, 1, m and n are as defined above), a curing agent containing a resin selected from triphenol alkane as a main component, (C) an alkenyl group-containing novolak resin and the following general formula (3) (식 중, R2는 1가의 유기기를 나타내고, a는 0.001＜a＜1,b는 1＜b＜3, 1.001＜a+b＜3임)으로 표시되는 오르가노폴리 실록산과의 부가 반응에 의해 얻어지는 블록 공중합체와, (D)무기질 충전제를 함유하여 되는 에폭시 수지 조성물로 봉지한 것을 특징으로 하는 수지 봉지형 반도체 장치.(Wherein R 2 represents a monovalent organic group, a is 0.001 <a <1, b is 1 <b <3, 1.001 <a + b <3) to the addition reaction with the organopolysiloxane represented by It sealed with the block copolymer obtained by this, and the epoxy resin composition containing (D) an inorganic filler, The resin-sealed-type semiconductor device characterized by the above-mentioned. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880002703A 1987-03-16 1988-03-15 Resin sealed semiconductor device KR930004249B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61630/62 1987-03-16
JP62-61636 1987-03-16
JP62061630A JPS63226951A (en) 1987-03-16 1987-03-16 Resin sealed semiconductor device

Publications (2)

Publication Number Publication Date
KR880011912A true KR880011912A (en) 1988-10-31
KR930004249B1 KR930004249B1 (en) 1993-05-22

Family

ID=13176702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002703A KR930004249B1 (en) 1987-03-16 1988-03-15 Resin sealed semiconductor device

Country Status (2)

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JP (1) JPS63226951A (en)
KR (1) KR930004249B1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2519278B2 (en) * 1987-12-15 1996-07-31 日東電工株式会社 Semiconductor device
JPH0618852B2 (en) * 1988-06-15 1994-03-16 住友ベークライト株式会社 Epoxy resin composition
JPH0662735B2 (en) * 1989-02-07 1994-08-17 住友ベークライト株式会社 Epoxy resin composition
JPH0362844A (en) * 1989-02-27 1991-03-18 Shin Etsu Chem Co Ltd Epoxy resin composition for sealing semiconductor and semiconductor device
EP0439171B1 (en) * 1990-01-25 1995-12-06 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition and semiconductor device encapsulated therewith
GB9110566D0 (en) * 1991-05-16 1991-07-03 Dow Corning Gmbh Method of coating
WO2024128191A1 (en) * 2022-12-16 2024-06-20 株式会社レゾナック Curable resin composition and electronic component device

Also Published As

Publication number Publication date
JPS63226951A (en) 1988-09-21
JPH0577686B2 (en) 1993-10-27
KR930004249B1 (en) 1993-05-22

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