KR920008875A - Heat treatment equipment - Google Patents

Heat treatment equipment Download PDF

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KR920008875A
KR920008875A KR1019910018290A KR910018290A KR920008875A KR 920008875 A KR920008875 A KR 920008875A KR 1019910018290 A KR1019910018290 A KR 1019910018290A KR 910018290 A KR910018290 A KR 910018290A KR 920008875 A KR920008875 A KR 920008875A
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heat treatment
heat
treatment apparatus
heat generating
divided
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KR1019910018290A
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Korean (ko)
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KR0159527B1 (en
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켄 나카오
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이노우에 다케시
도오교오에레구토론사가미 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Resistance Heating (AREA)
  • Furnace Details (AREA)

Abstract

내용 없음No content

Description

열처리장치Heat treatment equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 관한 실시예의 종형열처리 장치를 나타낸 개략단면도,1 is a schematic cross-sectional view showing a vertical heat treatment apparatus of an embodiment according to the present invention;

제2도는 제1도에서의 발열저항제 및 단열 부재를 나타낸 부분 사시도.2 is a partial perspective view showing the heat generating resistor and the heat insulating member in FIG.

Claims (18)

내부에 여러개의 피처리체가 배치되는 프로세스튜브(4), 상기 프로세스튜브 (4)의 바깥둘레에 배치되고 2규화 몰리브덴을 주성분으로 하는 발열저항체(10a)(10b)(10c); 상기 발열저항체(10a)(10b)(10c)를 포위하여 배치되고, 상기 발열저항체(10a)(10b)(10c)쪽의 표면에 2산화규소에 대하여 불활성 재료로 되는 층을 가지는 단열부재(11a)(11b)(11c)는, 상기 단열부재(11a)(11b)(11c)에 상기 발열저항체(10a)(10b)(10c)를 부착하여 지지하고, 적어도 표면이 2산화규소에 대하여 불활성 재료로 되는 고정부재를 구비한 열처리장치.A process tube (4) having a plurality of workpieces disposed therein, heat generating resistors (10a) (10b) (10c) disposed on the outer periphery of the process tube (4) and composed mainly of molybdenum silicide; The heat insulation member 11a which surrounds the said heat generating resistors 10a, 10b, 10c, and has a layer which becomes an inert material with respect to silicon dioxide on the surface of the said heat generating resistors 10a, 10b, 10c. 11b and 11c are supported by attaching the heat generating resistors 10a, 10b and 10c to the heat insulating members 11a, 11b and 11c and having at least a surface inert material with respect to silicon dioxide. Heat treatment apparatus provided with a fixing member. 제1항에 있어서, 상기 발열저항체(10a)(10b)(10c)는 상기 프로세스튜브(4)의 길이방향에 걸쳐서 여러 개로 분할되어 있는 열처리장치.2. The heat treatment apparatus according to claim 1, wherein the heat generating resistors (10a) (10b) (10c) are divided into several parts in the longitudinal direction of the process tube (4). 제2항에 있어서, 상기 발열저항체(10a)(10b)(10c)는 상기 프로세스튜브(4)에 배치되는 상기 피처리체에 대향하는 영역 및 상기 영역의 양쪽 영역에 대응하여 3개로 분할되어 있는 열처리장치.The heat treatment according to claim 2, wherein the heat generating resistors (10a) (10b) (10c) are divided into three sections corresponding to both the regions of the region and the region facing the object to be disposed on the process tube (4). Device. 제3항에 있어서, 상기 피처리체에 대향하는 영역에 위치하는 상기 발열저항체(10a)(10b)(10c)는, 2개 이상 분할되어 있는 열처리장치.4. The heat treatment apparatus according to claim 3, wherein the heat generating resistors (10a) (10b) (10c) located in a region facing the target object are divided into two or more. 제1항에 있어서, 상기층을 형성하는 2산화규소에 대하여 불황성인 재료는 믈라이트인 열처리장치.The heat treatment apparatus according to claim 1, wherein the material which is unstable to silicon dioxide forming the layer is mite. 제1항에 있어서, 상기 단열부재(11a)(11b)(11c)는, 세라믹 화이버로 형성되어 있는 열처리장치.The heat treatment apparatus according to claim 1, wherein the heat insulating members (11a) (11b) (11c) are made of ceramic fibers. 제1항에 있어서, 상기 단열부재는, 상기 프로세스튜브(4)의 길이방향에 걸쳐서 여러 개로 분할되는 있는 열처리장치.2. The heat treatment apparatus according to claim 1, wherein the heat insulating member is divided into several parts in the longitudinal direction of the process tube (4). 제2항에 있어서, 상기 단열부재(11a)(11b)(11c)는 상기 발열저항체의 분할형태와 같은 형태로 분할되어 있는 열처리장치.The heat treatment apparatus according to claim 2, wherein the heat insulating members (11a) (11b) (11c) are divided into the same shape as that of the heat generating resistor. 제1항에 있어서, 상기 단열부재(11a)(11b)(11c)는 프로세스튜브(4)의 길이방향에 결쳐서 여러 개로 분할되어 있는 동시에 상기 프로세스튜브(4)의 길이방향을 따라서 2분할되어 있는 열처리장치.According to claim 1, wherein the heat insulating members (11a) (11b) (11c) are divided into several in the longitudinal direction of the process tube (4) and at the same time divided into two along the longitudinal direction of the process tube (4) Heat treatment equipment. 제1항에 있어서, 상기 고정부재를 형성하는 2산화규소에 대하여 불활성인 재료는, 2규화몰리브덴인 열처리장치.The heat treatment apparatus according to claim 1, wherein the material inert to the silicon dioxide forming the fixing member is molybdenum silicide. 제1항에 있어서, 상기 고정부재를 형성하는 2산화규소에 대하여 불활성이 재료는, 믈라이트인 열처리장치.The heat treatment apparatus according to claim 1, wherein the material which is inert to silicon dioxide forming the fixing member is mite. 제1항에 있어서, 상기 프로세스튜브(4)는 세워서 배치되는 열처리장치.The heat treatment apparatus according to claim 1, wherein said process tube (4) is arranged upright. 제12항에 있어서, 상기 발열저항체(10a)(10b)(10c)는, 상기 프로세스튜브(4)에 배치되는 상기 피처리체에 대향하는 영역 및 상기 영역의 상하에 위치하는 2개의 영역에 대응하여 적어도 3분할되어 있는 열처리장치.The heat generating resistors (10a) (10b) (10c) according to claim 12, corresponding to two regions located above and below the region facing the object to be processed disposed on the process tube (4). Heat treatment apparatus divided into at least three. 제13항에 있어서, 상기 분할된 발열저항제(10a)(10b)(10c)는, 상기 단열부재(11a)(11b)(11c)에 각각 상하부에서 구부려서 구불구불한 형상으로 배열됨과 동시에 상하에 인접하는 경계부에서 상하의 구부러진 부분에 서로 인접하여 만나도록 배치되어 있는 열처리장치.The method of claim 13, wherein the divided heat generating resistors (10a) (10b) (10c) are bent in the upper and lower portions of the heat insulating members (11a) (11b) (11c), respectively, and are arranged in a serpentine shape. The heat treatment apparatus arranged so as to meet adjacent to each other in the upper and lower bent portion at the adjacent boundary. 제14항에 있어서, 상기 분할된 발열저항체(10a)(10b)(10c)의 상부 구부러진 부분은, 상기 고정부재로 지지, 매어달라지는 동시에 상기 발열저항체(10a)(10b)(10c)의 하부 구부러진 부분은 변형했을 때에 인접하는 발열저항체(10a)(10b)(10c)와 접촉하지 않는 거리를 띄우고 위치되어 있는 열처리장치.15. The method of claim 14, wherein the upper bent portions of the divided heating resistors (10a) (10b) (10c) are supported and suspended by the fixing member and the lower bent portions of the heating resistors (10a) (10b) (10c). The heat treatment apparatus in which the part is spaced apart from the contact with adjacent heat generating resistors (10a, 10b, 10c) when deformed. 제13항에 있어서, 상기 분할된 발열저항체(10a)(10b)(10c)는, 상기 단열부재(11a)(11b)(11c)에 각각 상하부에서 구부려서 구불구불한 형상으로 배열하여 부착, 지지되는 열처리장치.The divided heat generating resistors (10a) (10b) (10c) are bent and attached to the heat insulating members (11a) (11b) (11c) at upper and lower portions, respectively, and are attached and supported. Heat treatment device. 제16항에 있어서, 사기 분할된 발열저항체(10a)(10b)(10c)의 상부 구부러진 부분은, 상기 고정부재로 각각 지지, 매어달아지고, 상기 발열저항체(10a)(10b)(10c)의 하부 구부러진 부분은 상기 고정부재로 상기 발열저항체(10a)(10b)(10c)가 아래쪽으로 이동함을 허용하도록 각각 지지되며, 또한 상기 상부 구부러진 부분으로부터 늘어뜨려지는 우측 또는 좌측의 발열저항체(10a)(10b)(10c)부분의 도중에는 상기 고정부재로 상기 발열저항체(10a)(10b)(10c)가 횡방향으로 이동함을 규제하도록 각각 지지되어 있는 열처리장치.The upper bent portions of the divided heat generating resistors (10a) (10b) and (10c) are respectively supported and suspended by the fixing member, and the heat generating resistors (10a), (10b), and (10c) of the heat generating resistors (10a), (10b), and (10c), respectively. The lower bent portion is respectively supported by the fixing member to allow the heating resistors 10a, 10b and 10c to move downward, and the heating resistors 10a on the right or left that hang down from the upper bent portion. And (10b) and (10c) part of the heat treatment apparatus respectively supported by the fixing member so as to restrict the heating resistor (10a) (10b) (10c) to move in the lateral direction. 내부에 여러 개의 피처리체가 배치되는 프로세스튜브(4), 상기 프로세스튜브(4)으 바깥둘레에 배치되고, 2규화몰리브덴을 주성분으로 하는 발열저항체(10a)(10b)(10c), 상기 발열저항체(10a)(10b)(10c)를 포위하여 고정배치되고, 상기 발열저항체(10a)(10b)(10c)와 접촉하는 부분에 2산화규소에 대하여 불활성 재료로 되는 층을 가지는 단열부재(11a)(11b)(11c)를 구비한 것을 특징으로 하는 열처리장치.A process tube 4 having a plurality of workpieces disposed therein, a heat generating resistor 10a, 10b, 10c, which is disposed at an outer circumference of the process tube 4, and has molybdenum silicide as a main component, and the heat generating resistor (10a) (10a) (10a) and (c) are arranged and fixed, and the heat insulating member (11a) having a layer made of an inert material with respect to silicon dioxide at a portion in contact with the heating resistors (10a) (10b) (10c). And (11b) and (11c). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910018290A 1990-10-18 1991-10-17 Heat treatment apparatus KR0159527B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP28052290A JP3307924B2 (en) 1990-10-18 1990-10-18 Heat treatment equipment
JP90-280523 1990-10-18
JP90-280522 1990-10-18

Publications (2)

Publication Number Publication Date
KR920008875A true KR920008875A (en) 1992-05-28
KR0159527B1 KR0159527B1 (en) 1999-02-01

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ID=17626280

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Application Number Title Priority Date Filing Date
KR1019910018290A KR0159527B1 (en) 1990-10-18 1991-10-17 Heat treatment apparatus

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KR (1) KR0159527B1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06300452A (en) * 1993-04-13 1994-10-28 Murata Mfg Co Ltd Continuous heat treatment furnace
JPH076973A (en) * 1993-06-18 1995-01-10 Kokusai Electric Co Ltd Heating apparatus
JP3657800B2 (en) * 1998-02-20 2005-06-08 株式会社リケン Molybdenum disilicide-based composite ceramic heating element and manufacturing method thereof
JP4539895B2 (en) * 2000-04-27 2010-09-08 日鉱金属株式会社 Mounting method of heater mainly composed of MoSi2
US7027722B2 (en) 2002-11-25 2006-04-11 Koyo Thermo Systems Co., Ltd. Electric heater for a semiconductor processing apparatus
JP3988942B2 (en) 2003-03-31 2007-10-10 株式会社国際電気セミコンダクターサービス Heater inspection apparatus and semiconductor manufacturing apparatus equipped with the same
JP4885438B2 (en) * 2003-10-21 2012-02-29 株式会社日立国際電気 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING APPARATUS ELECTRIC HEATER, SUBSTRATE PROCESSING APPARATUS PROVIDED WITH THE SAME, HOLDER STRUCTURE HOLDING STRUCTURE AND SUBSTRATE PROCESSING APPARATUS
JP4769842B2 (en) * 2008-04-08 2011-09-07 株式会社アルファ・オイコス High temperature furnace
KR101396601B1 (en) * 2013-02-26 2014-05-20 주식회사 테라세미콘 Batch type apparatus for processing substrate
KR101677560B1 (en) * 2014-03-18 2016-11-18 주식회사 유진테크 Apparatus for processing substrate with heater adjusting process space temperature according to height

Also Published As

Publication number Publication date
KR0159527B1 (en) 1999-02-01
JP3307924B2 (en) 2002-07-29
JPH04155828A (en) 1992-05-28

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