Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사filedCritical문정환
Priority to KR1019900014380ApriorityCriticalpatent/KR920007069A/en
Publication of KR920007069ApublicationCriticalpatent/KR920007069A/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
내용 없음No content
Description
블랭키트 텅스텐을 사용한 A1 힐록 제거방법A1 heellock removal method using blank kit tungsten
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 공정 단면도.2 is a cross-sectional view of the process of the present invention.
Claims (2)
반도쳄 소자(1)의 메탈 라인 형성에 있어서, A1(2) 위에 리프렉터리 메탈(3)을 형성하여 패터닝하고 블랭키트 텅스텐(4)을 디포지션하여 블랭키트 에치시킴을 특징으로 하는 블랭키트 텅스텐을 사용한 A1 힐록 제거방법.In forming the metal line of the semiconductor device 1, the selective metal 3 is formed and patterned on the A1 (2), and the blank kit tungsten 4 is deposited to etch the blank kit. A1 heellock removal method using blank kit tungsten.제1항에 있어서, 내화성 메탈(2)은 텅스텐, 몰리브덴, 코발트, 티타늄, 메탈 실리사이트를 사용함을 특징으로 하는 블랭키트 텅스텐을 사용한 A1 힐록 제거방법.The method of claim 1, wherein the refractory metal (2) is made of tungsten, molybdenum, cobalt, titanium, and metal silicide.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.