KR910018809A - Semiconductor test device - Google Patents

Semiconductor test device Download PDF

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Publication number
KR910018809A
KR910018809A KR1019900005123A KR900005123A KR910018809A KR 910018809 A KR910018809 A KR 910018809A KR 1019900005123 A KR1019900005123 A KR 1019900005123A KR 900005123 A KR900005123 A KR 900005123A KR 910018809 A KR910018809 A KR 910018809A
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KR
South Korea
Prior art keywords
test
semiconductor
flip
signal
output
Prior art date
Application number
KR1019900005123A
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Korean (ko)
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KR930000513B1 (en
Inventor
배정환
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019900005123A priority Critical patent/KR930000513B1/en
Publication of KR910018809A publication Critical patent/KR910018809A/en
Application granted granted Critical
Publication of KR930000513B1 publication Critical patent/KR930000513B1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Abstract

내용 없음No content

Description

반도체 시험장치Semiconductor test device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 반도체 시험장치의 구성도. 제4도는 본 발명에 따른 시험장치 제어회로도. 제5도는 본 발명에서의 제어신호 타이밍 챠트도.3 is a block diagram of a semiconductor test apparatus according to the present invention. 4 is a test apparatus control circuit diagram according to the present invention. 5 is a control signal timing chart according to the present invention.

Claims (2)

컴퓨터 제어 시험장비인 테스터(1)와 병렬로 장착된 2개의 측정용IC(2,2')와, 상기 측정용 반도체IC(2,2')에 테스터(1)사이의 신호선들을 시험장치 제어회로에서의 제어신호(A,B)에 따라 개방 또는 폐쇄시키기 위해 반도체IC(2,2')의 각 입출력단에 연결되는 릴레이부(2a)를 포함하여 구성한 것을 특징으로 하는 반도체 시험장치.Test device control signal lines between two tester ICs (2,2 ') mounted in parallel with the tester (1), a computer-controlled test equipment, and the tester (1) in the test semiconductor IC (2,2'). And a relay section (2a) connected to each input / output terminal of the semiconductor IC (2, 2 ') for opening or closing according to control signals (A, B) in the circuit. 제1항에 있어서, 시험장치 제어회로는 각 반도체IC(2,2')의 시험시작 요청 스위치(4,4′)와, 상기 시험시작요청 스위치(4)가 눌러졌을때 측정용 반도체IC(2)릴레이 구동 신호(A)를 출력하여 측정용IC(2)에 연결된 릴레이를 구동시키고 반도체IC(2′)의 시험 진행 표시등(5)을 동작시키는 D플립플롭(8)과, 상기 시험시작 요청스위치(4′)가 눌러졌을때 릴레이 구호신호(E)를 출력하여 측정용 반도체IC(2′)에 연결된 릴레이를 구동시키고 반도체IC(2′)의 시험 진행표시등(5′)을 동작시키는 D플립플롭(9)과, 상기 테스터(1)로 부터 반도체IC(2)의 실험결과 신호를 받아 측정용 반도체IC(2)의 양품/불량품 표시등(6,7)을 선택 동작시키는 D플립플롭(11,12)과, 상기 테스터(1)로 반도체IC(2′)의 시험결과 신호를 받아 측정용 반도체IC(2′)의 양품/불량품 표시등(6′,7′)을 선택 동작시키는 D플립플롭(13,14)과, 상기 D플립플롭(11∼14)의 각 클리어단자에 각 시험결과 신호를 인가하는 릴레이(17∼20)와, 시험종료 신호를 받아 상기 릴레이(17∼19)로 인가하는 릴레이(21,22)와, 시험시작 신호를 클리어단자를 인가받고 시험종료신호를 클럭단자(CLK)로 인가받고 그 출력을 J.K플립플롭(15)의 출력을 각 일측 입력으로 인가받는 낸드게이트(24,25)의 입력으로 인가하는 D플립플롭(10)과, 상기 낸드게이트(24,25)의 각 출력을 양측입력으로 받는 앤드게이트(23)의 출력과 전원(5V)을 입력으로 받아 시험시작신호를 출력하는 멀티바이브 레이터(16)와, 전원(5V)을 클리어단과 클럭단으로 인가받고 그 출력을 낸드케이트(24,25)의 각 입력으로 인가하는 J.K플립플롭(15)을 포함하여 구성된 것을 특징으로하는 반도체 시험장치.The test apparatus control circuit according to claim 1, wherein the test apparatus control circuit comprises a test start request switch (4, 4 ') of each semiconductor IC (2, 2') and a test semiconductor IC (for measurement) when the test start request switch (4) is pressed. 2) D flip-flop 8 for outputting the relay drive signal A to drive a relay connected to the measurement IC 2 and operating the test progress indicator 5 of the semiconductor IC 2 '; When the start request switch (4 ') is pressed, the relay relief signal (E) is output to drive the relay connected to the measurement semiconductor IC (2'), and the test progress indicator (5 ') of the semiconductor IC (2') is turned on. The D flip-flop 9 to be operated and the test result signal of the semiconductor IC 2 are received from the tester 1 to selectively operate the good / bad light indicators 6 and 7 of the semiconductor IC 2 for measurement. D flip-flops (11, 12) and the tester (1) receives the test result signal of the semiconductor IC (2 ') and the good / bad indicators (6', 7 ') of the measuring semiconductor IC (2'). Select action Each key has a clear terminal of the D flip-flops 13 and 14 and the D flip-flops 11 to 14 The relays 17 to 20 for applying the respective test result signals, the relays 21 and 22 for receiving the test end signal and applying them to the relays 17 to 19, and the test start signal. Is applied to the test termination signal to the clock terminal (CLK) and the output of the JK flip-flop (15) D flip-flop 10 for applying N as an input of the NAND gates 24 and 25, respectively, and an output of the AND gate 23 for receiving each output of the NAND gates 24 and 25 as both inputs. The multivibrator 16 receives the power supply 5V as an input and outputs a test start signal, and the power supply 5V is applied to the clear terminal and the clock terminal, and the output is applied to each input of the NAND gates 24 and 25. A semiconductor test apparatus comprising a JK flip-flop (15). ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900005123A 1990-04-13 1990-04-13 Semiconductor testing equipment KR930000513B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900005123A KR930000513B1 (en) 1990-04-13 1990-04-13 Semiconductor testing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900005123A KR930000513B1 (en) 1990-04-13 1990-04-13 Semiconductor testing equipment

Publications (2)

Publication Number Publication Date
KR910018809A true KR910018809A (en) 1991-11-30
KR930000513B1 KR930000513B1 (en) 1993-01-21

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KR1019900005123A KR930000513B1 (en) 1990-04-13 1990-04-13 Semiconductor testing equipment

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568852B1 (en) * 1999-03-12 2006-04-10 삼성전자주식회사 A parallel test system of a semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100568852B1 (en) * 1999-03-12 2006-04-10 삼성전자주식회사 A parallel test system of a semiconductor memory device

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Publication number Publication date
KR930000513B1 (en) 1993-01-21

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