KR910016052A - Double side polishing method of GaAs wafer - Google Patents

Double side polishing method of GaAs wafer Download PDF

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Publication number
KR910016052A
KR910016052A KR1019900002701A KR900002701A KR910016052A KR 910016052 A KR910016052 A KR 910016052A KR 1019900002701 A KR1019900002701 A KR 1019900002701A KR 900002701 A KR900002701 A KR 900002701A KR 910016052 A KR910016052 A KR 910016052A
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KR
South Korea
Prior art keywords
polishing
side polishing
gaas wafer
polishing method
double side
Prior art date
Application number
KR1019900002701A
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Korean (ko)
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KR930007971B1 (en
Inventor
백성신
유학도
Original Assignee
한형수
삼성코닝 주식회사
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Priority to KR1019900002701A priority Critical patent/KR930007971B1/en
Publication of KR910016052A publication Critical patent/KR910016052A/en
Application granted granted Critical
Publication of KR930007971B1 publication Critical patent/KR930007971B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음No content

Description

GaAs 웨이퍼의 양면 폴리싱(polishing) 방법How to Polish Both Sides of GaAs Wafers

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 GaAs웨이퍼를 양면폴리싱하는 장치.1 is an apparatus for double-side polishing a GaAs wafer.

Claims (4)

GaAs 웨이퍼를 양면 폴리싱 하는데 있어서, 최종 폴리싱 후에 D.I.water로 세척시 초산 및/또는 폴리산화에틸렌수지를 투입하여 패드 표면의 pH가 4-6으로 유지되는 것을 특징으로 하는 GaAs 웨이퍼의 양면 폴리싱 방법.A method of double-side polishing a GaAs wafer, wherein the pH of the surface of the pad is maintained at 4-6 by adding acetic acid and / or polyethylene oxide during washing with D.I.water after the final polishing. 제 1 항에 있어서, 상기 투입되는 초산과 폴리산화에틸렌수지의 양이 1 : 1로 동량인 것을 특징으로 하는 GaAs 웨이퍼의 양면 폴리싱 방법.The method for polishing double-sided GaAs wafers according to claim 1, wherein the amount of acetic acid and polyethylene oxide resin introduced is equal to 1: 1. 제 1 항에 있어서, 상기 폴리싱 압력이 30g/㎠~40g/㎠이고, 턴 테이블의 회전속도가 20~30rpm인 것을 특징으로 하는 GaAs 웨이퍼의 양면 폴리싱 방법.The method of claim 1, wherein the polishing pressure is 30 g / cm 2 to 40 g / cm 2 and the rotational speed of the turn table is 20 to 30 rpm. 제 1 항에 있어서, 상기 폴리산화에틸렌수지는 폴리옥스수지인 것을 특징으로 하는 GaAs 웨이퍼의 양면 폴리싱 방법.The method of claim 1, wherein the polyethylene resin is a polyox resin. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900002701A 1990-02-28 1990-02-28 POLISHING METHOD OF GaAs WAFER KR930007971B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900002701A KR930007971B1 (en) 1990-02-28 1990-02-28 POLISHING METHOD OF GaAs WAFER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900002701A KR930007971B1 (en) 1990-02-28 1990-02-28 POLISHING METHOD OF GaAs WAFER

Publications (2)

Publication Number Publication Date
KR910016052A true KR910016052A (en) 1991-09-30
KR930007971B1 KR930007971B1 (en) 1993-08-25

Family

ID=19296583

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900002701A KR930007971B1 (en) 1990-02-28 1990-02-28 POLISHING METHOD OF GaAs WAFER

Country Status (1)

Country Link
KR (1) KR930007971B1 (en)

Also Published As

Publication number Publication date
KR930007971B1 (en) 1993-08-25

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