KR910015009A - 반도체 제조장치 - Google Patents

반도체 제조장치 Download PDF

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Publication number
KR910015009A
KR910015009A KR1019900000628A KR900000628A KR910015009A KR 910015009 A KR910015009 A KR 910015009A KR 1019900000628 A KR1019900000628 A KR 1019900000628A KR 900000628 A KR900000628 A KR 900000628A KR 910015009 A KR910015009 A KR 910015009A
Authority
KR
South Korea
Prior art keywords
ultrapure water
valve
semiconductor manufacturing
water injector
process tube
Prior art date
Application number
KR1019900000628A
Other languages
English (en)
Other versions
KR920007187B1 (ko
Inventor
박문규
김진우
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900000628A priority Critical patent/KR920007187B1/ko
Publication of KR910015009A publication Critical patent/KR910015009A/ko
Application granted granted Critical
Publication of KR920007187B1 publication Critical patent/KR920007187B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

반도체 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 반도체 제조장치의 개략도, 제2도는 초순수물 주입기의 사시도, 제3도는 불꽃방식의 산화막 성장장치의 개략도.

Claims (3)

  1. 프로세스튜브(1) 내부에 웨이퍼(2)가 안착되고, 외부에 확산로(3)가 설치되며, 프로세스튜브(1)입구에 초순수물 주입기(4)가 장착되고, 초순수물 주입기(4)에 가스주입관(5)이 연결되며, 초순수물 주입기(4)에 3방식밸브(7)가 초순수물 주입관(6)으로 연결되고, 초순수물을 정체시키지 않은 상태로 일정유량을 공급할 수 있도록 3방식밸브(7)의 일측에는 유랑계(9), 레규레이터(8)와 메인밸브(11)의 공급밸브(11B)에 연결된 밸브(10)가 순차적으로 연결되어 있으며, 3방식 밸브(7)의 타측에는 메인밸브(11)의 순환밸브(11A)에 연결되어 구성되는 것을 특징으로 하는 반도체 제조장치.
  2. 제1항에 있어서, 상기 초순수물주입기(4)에서 초순수물이 프로세스튜브(1) 내부의 공정로까지 직접 공급되는 것을 특징으로 하는 반도체 제조장치.
  3. 제1항에 있어서, 상기 초순수물주입기(4)는 초순수물과 가스가 프로세스 튜브(1) 내부이 별도위치에서 상호 간섭받지 않고 공급되는 것을 특징으로 하는 반도체 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900000628A 1990-01-19 1990-01-19 반도체 제조장치 KR920007187B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900000628A KR920007187B1 (ko) 1990-01-19 1990-01-19 반도체 제조장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900000628A KR920007187B1 (ko) 1990-01-19 1990-01-19 반도체 제조장치

Publications (2)

Publication Number Publication Date
KR910015009A true KR910015009A (ko) 1991-08-31
KR920007187B1 KR920007187B1 (ko) 1992-08-27

Family

ID=19295397

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000628A KR920007187B1 (ko) 1990-01-19 1990-01-19 반도체 제조장치

Country Status (1)

Country Link
KR (1) KR920007187B1 (ko)

Also Published As

Publication number Publication date
KR920007187B1 (ko) 1992-08-27

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