KR910013643A - Manufacturing method of semiconductor laser - Google Patents

Manufacturing method of semiconductor laser Download PDF

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Publication number
KR910013643A
KR910013643A KR1019890019698A KR890019698A KR910013643A KR 910013643 A KR910013643 A KR 910013643A KR 1019890019698 A KR1019890019698 A KR 1019890019698A KR 890019698 A KR890019698 A KR 890019698A KR 910013643 A KR910013643 A KR 910013643A
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KR
South Korea
Prior art keywords
conductivity type
layer
forming
cladding layer
manufacturing
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Application number
KR1019890019698A
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Korean (ko)
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KR920006392B1 (en
Inventor
김기준
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019890019698A priority Critical patent/KR920006392B1/en
Publication of KR910013643A publication Critical patent/KR910013643A/en
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Publication of KR920006392B1 publication Critical patent/KR920006392B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음.No content.

Description

반도체레이저의 제조방법Manufacturing method of semiconductor laser

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2 (A)~(D)도는 본 발명에 따른 반도체레이저의 제조공정을 나타내는 수직단면도.2 (A) to (D) are vertical cross-sectional views showing a manufacturing process of a semiconductor laser according to the present invention.

Claims (5)

반도체레이저의 제조방법에 있어서, 제1도전형의 반도체 기판상에 제1도전형의 제1클레드층, 활성층, 제2도전형의 제2클레드층을 순차적으로 형성하는 공정과, 상기 제2클레드층의 소정부분에 스트라이프 형태의 홈을 형성하는 공정과, 상기 제1클래드층 상에 제1도전형의 전류제한층과 확산저지층을 형성하고 상기 홈의 일측 단자부분에 스트라이프 형태의 개구를 형성하는 공정과, 상기 개구를 통하여 제1도전형의 불순물을 확산시키며 상기 제2클래드층과 연결되는 전류주입영역을 형성하는 공정과, 상기 확산저지층을 제거한 후 전극들을 형성하는 공정으로 이루어짐을 특징으로 하는 반도체레이저의 제조방법.A method of manufacturing a semiconductor laser, comprising the steps of: sequentially forming a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type on a semiconductor substrate of a first conductivity type; Forming a stripe-shaped groove in a predetermined portion of the two clad layer; forming a current limiting layer and a diffusion blocking layer of a first conductivity type on the first cladding layer; Forming openings, diffusing impurities of a first conductivity type through the openings, forming a current injection region connected to the second cladding layer, and forming electrodes after removing the diffusion blocking layer; Method for manufacturing a semiconductor laser, characterized in that made. 제1항에 있어서, 상기 활성층을 클래드층을 보다 굴절율이 큰 물질로 형성함을 특징으로 하는 반도체레이서의 제조방법.The method of claim 1, wherein the active layer is formed of a cladding layer having a larger refractive index. 제1항에 있어서, 상기 전류제한층을 액상결정성장법으로 형성함을 특징으로 하는 반도체레이저의 제조방법.The method of manufacturing a semiconductor laser according to claim 1, wherein the current limiting layer is formed by a liquid crystal growth method. 제1항에 있어서, 상기 전류주입영역을 상기 홈의 단차 모서리부근에서 제2클레드층과 겹쳐지도록 형성함을 특징으로 하는 반도체레이저의 제조방법.The method of claim 1, wherein the current injection region is formed to overlap the second cladding layer near the stepped corner of the groove. 제4항에 있어서, 상기 제1도전형이 n형 이고 제2도전형이 P형인 조건하에서 상기 전류주입영역은 Zn을 확산시켜 형성함을 특징으로 하는 반도체레이저의 제조방법.5. The method of claim 4, wherein the current injection region is formed by diffusing Zn under the condition that the first conductivity type is n-type and the second conductivity type is P-type. ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the original contents.
KR1019890019698A 1989-12-27 1989-12-27 Manufacturing method of semiconductor KR920006392B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890019698A KR920006392B1 (en) 1989-12-27 1989-12-27 Manufacturing method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890019698A KR920006392B1 (en) 1989-12-27 1989-12-27 Manufacturing method of semiconductor

Publications (2)

Publication Number Publication Date
KR910013643A true KR910013643A (en) 1991-08-08
KR920006392B1 KR920006392B1 (en) 1992-08-03

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019698A KR920006392B1 (en) 1989-12-27 1989-12-27 Manufacturing method of semiconductor

Country Status (1)

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KR (1) KR920006392B1 (en)

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Publication number Publication date
KR920006392B1 (en) 1992-08-03

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