KR910013580A - Thin film transistor - Google Patents

Thin film transistor Download PDF

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Publication number
KR910013580A
KR910013580A KR1019890019337A KR890019337A KR910013580A KR 910013580 A KR910013580 A KR 910013580A KR 1019890019337 A KR1019890019337 A KR 1019890019337A KR 890019337 A KR890019337 A KR 890019337A KR 910013580 A KR910013580 A KR 910013580A
Authority
KR
South Korea
Prior art keywords
thin film
film transistor
protective film
electrode
electrodes
Prior art date
Application number
KR1019890019337A
Other languages
Korean (ko)
Other versions
KR920004027B1 (en
Inventor
권순길
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019890019337A priority Critical patent/KR920004027B1/en
Publication of KR910013580A publication Critical patent/KR910013580A/en
Application granted granted Critical
Publication of KR920004027B1 publication Critical patent/KR920004027B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

내용 없음.No content.

Description

박막 트랜지스터Thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 박막 트랜지스터를 도시한 단면도.2 is a cross-sectional view showing a thin film transistor of the present invention.

Claims (5)

유리기판(1) 상에 신호전극(2), 절연막(3), 제1의 소오스전극(5) 및 드레인전극(6)이 형성된 비정질 실리콘 박막 트랜지스터에 있어서, 상기 제1소오스전극(5) 및 드레인전극(6)상에 비정질실리콘 나이트 라이트를 3000~4000A의 두게로 증착한 보호막(7)과, 상기 보호막(7) 상에 형성되어서 채널부에 입사되는 수직 입사광을 차단하는 광차폐막(8)과, 상기 광차폐막(8)의 형성시에 동일한 재질로 형성되어서 경사입사광을 차단하는 작용을 가진 제2의 소오스전극(5′) 및 드레인전극(6′)으로 우이루어진 것을 특징으로 하는 박막 트랜지스터.In an amorphous silicon thin film transistor having a signal electrode 2, an insulating film 3, a first source electrode 5, and a drain electrode 6 formed on a glass substrate 1, the first source electrode 5 and A protective film 7 in which amorphous silicon nitrite is deposited to a thickness of 3000 to 4000 A on the drain electrode 6, and a light shielding film 8 formed on the protective film 7 to block vertical incident light incident on the channel portion. And a second source electrode 5 'and a drain electrode 6' formed of the same material at the time of forming the light shielding film 8 and blocking the inclined incident light. . 제1항에 있어서, 상기 제1 및 제2의 소오스전극(5)(5′)은 상기 보호막(7)에 형성된 관통구멍(10)을 개재해서 전기적으로 접속되고, 상기 제1 및 제2의 드레인전극(6)(6′)은 상기 보호막(7)에 형성도니 관통구멍(10′)을 개재해서 전기적으로 접속되어 있는 것을 특징으로 하는 박막 트랜지스터.2. The first and second source electrodes 5 and 5 'are electrically connected to each other via a through hole 10 formed in the protective film 7. A thin film transistor, characterized in that the drain electrode (6) (6 ') is electrically connected to the protective film (7) via a through hole (10'). 제1항에 있어서, 상기 제1 및 제2의 소오스전극은 보호막(7)을 개재해서 2층구조로 되어있고, 상기 제1 및 제2의 드레인전극은 보호막(7)을 개재해서 2층구조로 되어있는 것을 특징으로 하는 박막 트랜지스터.2. The first and second source electrodes have a two-layer structure via a protective film (7), and the first and second drain electrodes have a two-layer structure via a protective film (7). A thin film transistor, characterized in that. 제1항에 있어서, 상기 제1 및 제2소오스전극(5)(5′)은 Al, Cr, Ni, Mo, W, Ti, Pt, Co 중에서 선택된 1종인 것을 특징으로 하는 박막 트랜지스터.The thin film transistor according to claim 1, wherein the first and second source electrodes (5) (5 ') are one selected from Al, Cr, Ni, Mo, W, Ti, Pt, and Co. 제1항에 있어서, 상기 제1 및 제2의 드레인전극(6)(6′)은 Al, Cr, Ni, Mo, W, Ti, Pt, Co 중에서 선택된 1종인 것을 특징으로 하는 박막 트랜지스터.The thin film transistor according to claim 1, wherein the first and second drain electrodes (6) (6 ') are one selected from Al, Cr, Ni, Mo, W, Ti, Pt, and Co. ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the original contents.
KR1019890019337A 1989-12-22 1989-12-22 Thin film transistor KR920004027B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890019337A KR920004027B1 (en) 1989-12-22 1989-12-22 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890019337A KR920004027B1 (en) 1989-12-22 1989-12-22 Thin film transistor

Publications (2)

Publication Number Publication Date
KR910013580A true KR910013580A (en) 1991-08-08
KR920004027B1 KR920004027B1 (en) 1992-05-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019337A KR920004027B1 (en) 1989-12-22 1989-12-22 Thin film transistor

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KR (1) KR920004027B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476622B1 (en) * 1997-10-13 2005-08-23 삼성전자주식회사 Liquid crystal display device using wiring with molybdenum-tungsten alloy and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476622B1 (en) * 1997-10-13 2005-08-23 삼성전자주식회사 Liquid crystal display device using wiring with molybdenum-tungsten alloy and its manufacturing method

Also Published As

Publication number Publication date
KR920004027B1 (en) 1992-05-22

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