JPS60236267A - Thin film transistor - Google Patents
Thin film transistorInfo
- Publication number
- JPS60236267A JPS60236267A JP9343084A JP9343084A JPS60236267A JP S60236267 A JPS60236267 A JP S60236267A JP 9343084 A JP9343084 A JP 9343084A JP 9343084 A JP9343084 A JP 9343084A JP S60236267 A JPS60236267 A JP S60236267A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film transistor
- thin film
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000011159 matrix material Substances 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は薄膜トランジスタに関し、特にマトリックス型
液晶表示装置のアドレス用能動素子として用いることが
できる薄膜トランジスタに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film transistor, and more particularly to a thin film transistor that can be used as an active element for addressing in a matrix type liquid crystal display device.
従来例の構成とその問題点
近年、液晶表示装置の表示容量増大に伴って、走査線数
が増え、そのため、従来の電極マトリックス方式の液晶
表示装置では表示コントラストや応答速度が低下するこ
とから、特性向上のためにマ） ｌ）ックス型液晶表示
装置に薄膜トランジスタが利用されつつある。Conventional structure and its problems In recent years, as the display capacity of liquid crystal display devices has increased, the number of scanning lines has increased.As a result, the display contrast and response speed of conventional electrode matrix type liquid crystal display devices have decreased. Thin film transistors are being used in MAX type liquid crystal display devices to improve their characteristics.
以下、図面を参照しながら従来のｒ＠膜トランジスタに
ついて説明する。第１図は従来の薄膜トランジスタの断
面図であり、ガラスなどの絶縁基板１の表面にゲート電
極２を設け、このゲート電極２を僚うごとく絶縁層３を
設け、その上に光電特性を有する半導体層４、保護用絶
縁層６、ソース電極６、ドレイン電極７を順次設けた構
造をしている。Hereinafter, a conventional r@ film transistor will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a conventional thin film transistor, in which a gate electrode 2 is provided on the surface of an insulating substrate 1 made of glass or the like, an insulating layer 3 is provided over the gate electrode 2, and a semiconductor having photoelectric properties is provided on the insulating layer 3. It has a structure in which a layer 4, a protective insulating layer 6, a source electrode 6, and a drain electrode 7 are sequentially provided.
以上の様な従来の構造の薄膜トランジスタでは、トラン
ジスタ上方からの光８は、途中遮断されることなく半導
体層に照射されるため、光電特性を有する半導体層を用
いた薄膜トランジスタでは、キャリアが励起され、トラ
ンジスタの遮断領域におけるチャンネルコンダクタンス
が増大することになり、液晶表示装置のアドレス用能動
素子として、スイッチング特性が不適合となる問題点を
有していた。In a thin film transistor with the conventional structure as described above, the light 8 from above the transistor is irradiated onto the semiconductor layer without being interrupted midway, so in a thin film transistor using a semiconductor layer with photoelectric properties, carriers are excited, The channel conductance in the cut-off region of the transistor increases, resulting in a problem that the switching characteristics are not suitable for use as an active element for addressing in a liquid crystal display device.
発明の目的
本発明はこの様な従来の問題点を解消したものであり、
その目的よするところは半導体層のチャンネル部が受光
されない構造にすることにより、マトリックス型液晶表
示装置のアドレス用能動素子としてのスイッチング特性
を良好に維持することである。Purpose of the Invention The present invention solves these conventional problems.
The purpose of this is to maintain good switching characteristics as an active element for addressing in a matrix type liquid crystal display device by creating a structure in which the channel portion of the semiconductor layer does not receive light.
発明の構成
本発明の薄膜トランジスタは少なくともチャンネル部が
光電特性を有する材料よりなる薄膜トランジスタであっ
て、ドレイン電極あるいはソース電極を延在させて、前
記チャンネル部を被覆するような構造にしたものであり
、これによりマトリックス型液晶表示装置のアドレス用
能動素子としてのスイッチング特性が良好になるもので
ある。Structure of the Invention The thin film transistor of the present invention is a thin film transistor in which at least a channel portion is made of a material having photoelectric properties, and has a structure in which a drain electrode or a source electrode is extended to cover the channel portion, This improves the switching characteristics as an active element for addressing in a matrix type liquid crystal display device.
実施例の説明
以下、本発明の一実施例について、図面を参照しながら
説明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例における薄膜トランジスタの
断面図を示す。第１図と同一部分もしくは相当部分には
同一符号を付して、その詳しい説明は省略する。同図に
おいて、９はチャンネル部を被覆する構造にしたドレイ
ン電極である。FIG. 2 shows a cross-sectional view of a thin film transistor in one embodiment of the present invention. The same or corresponding parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. In the figure, reference numeral 9 denotes a drain electrode structured to cover the channel portion.
以上の様な構成であれば、トランジスタ上方から照射さ
れた光８がドレイン電極９に遮断されるために、半導体
層の光電特性によるスイッチング特性の悪化を解消する
ことができる。With the above configuration, since the light 8 irradiated from above the transistor is blocked by the drain electrode 9, it is possible to eliminate the deterioration of the switching characteristics due to the photoelectric characteristics of the semiconductor layer.
次に本発明の他の実施例について、図面を参照しながら
説明する。Next, other embodiments of the present invention will be described with reference to the drawings.
第３図は本発明の他の実施例における尚膜トランジスタ
の断面図である。第１図と同一部分もしくは相当部分に
は同一符号を付して、その詳しい説明は省略する。図に
おいて、１ｏはドレイン電極とソース電極を分離するた
めの絶縁層、１１はトランジスタ全面を被覆するように
構成したドレイン電極である。FIG. 3 is a sectional view of a film transistor in another embodiment of the present invention. The same or corresponding parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted. In the figure, 1o is an insulating layer for separating the drain electrode and source electrode, and 11 is a drain electrode configured to cover the entire surface of the transistor.
以上の様な構造であれば、トランジスタ上方から照射さ
れた光８だけでなく、斜方から照射される光１２も遮断
されることから、先の実施例と同様の効果を得ることが
できる。With the above structure, not only the light 8 irradiated from above the transistor but also the light 12 irradiated from the oblique direction is blocked, so that the same effect as in the previous embodiment can be obtained.
発明の効果
以上の説明から明らかな様に、本発明は少なくともチャ
ンネル部が光電特性を有する材料よりなる薄膜トランジ
スタであって、前記チャンネル部をドレイン電極あるい
はドレイン電極を延在させて前記チャンネル部を被覆す
るような構成にしているので、半導体層の充電特性の影
會を排除し、マトリックス型液晶表示装置のアドレス用
能動素子としてのスイッチング特性を良好に維持すると
云う優れた効果が得られる。また、ドレイン電極あるい
けノース電極下に薄膜トランジスタを構成することがで
きることから、マトリックス型液晶表示装置の開口率を
向上させると云う効果も得られる。Effects of the Invention As is clear from the above description, the present invention provides a thin film transistor in which at least a channel portion is made of a material having photoelectric properties, and wherein the channel portion is covered with a drain electrode or a drain electrode is extended to cover the channel portion. With this structure, it is possible to obtain the excellent effect of eliminating the influence of the charging characteristics of the semiconductor layer and maintaining good switching characteristics as an active element for addressing in a matrix type liquid crystal display device. Further, since a thin film transistor can be formed under the drain electrode or the north electrode, the aperture ratio of the matrix type liquid crystal display device can be improved.
第１図は従来の薄膜トランジスタの断面図、第２図は本
発明の一実施例の薄膜トランジスタの断面図、第３図は
本発明の他の実施例の薄膜トランジスタの断面図である
。
１・・・・・・絶縁基板、２・・・・・・ゲート電極、
３・・・・・・絶縁層、４・・・・・・半導体層、６・
四・保護用絶縁層、６・・・・・・ソース電極、７・・
・・ドレイン電極、８・・・・トランジスタ上方から照
射される光、９，１１・・印・チャンネルを被覆する構
造にしたドレイン電極、１０・・・・・ドレイン電極と
ソース電極を分離するために設けたＰ３縁層。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第３図FIG. 1 is a cross-sectional view of a conventional thin film transistor, FIG. 2 is a cross-sectional view of a thin film transistor according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a thin film transistor according to another embodiment of the present invention. 1...Insulating substrate, 2...Gate electrode,
3...Insulating layer, 4...Semiconductor layer, 6...
4. Protective insulating layer, 6... Source electrode, 7...
...Drain electrode, 8...Light irradiated from above the transistor, 9, 11...Drain electrode structured to cover the mark/channel, 10...For separating the drain electrode and source electrode. P3 marginal layer provided on. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3
Claims (1)
る薄膜トランジスタであって、ドレイン電極あるいはソ
ース電極を延在させて前記チャンネル部を光遮閉したこ
とを特徴とする薄膜トランジスタ。1. A thin film transistor in which at least a channel portion is made of a material having photoelectric properties, the thin film transistor characterized in that the channel portion is shielded from light by extending a drain electrode or a source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9343084A JPS60236267A (en) | 1984-05-10 | 1984-05-10 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9343084A JPS60236267A (en) | 1984-05-10 | 1984-05-10 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60236267A true JPS60236267A (en) | 1985-11-25 |
Family
ID=14082089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9343084A Pending JPS60236267A (en) | 1984-05-10 | 1984-05-10 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60236267A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292473A (en) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | Thin film transistor |
| EP0545694A2 (en) * | 1991-12-02 | 1993-06-09 | Canon Kabushiki Kaisha | Image display device with reduced cell gap variation and method of manufacturing the same |
| US5633182A (en) * | 1991-12-02 | 1997-05-27 | Canon Kabushiki Kaisha | Method of manufacturing an image display device with reduced cell gap variation |
| US5834344A (en) * | 1996-07-17 | 1998-11-10 | Industrial Technology Research Institute | Method for forming high performance thin film transistor structure |
-
1984
- 1984-05-10 JP JP9343084A patent/JPS60236267A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6292473A (en) * | 1985-10-18 | 1987-04-27 | Sanyo Electric Co Ltd | Thin film transistor |
| EP0545694A2 (en) * | 1991-12-02 | 1993-06-09 | Canon Kabushiki Kaisha | Image display device with reduced cell gap variation and method of manufacturing the same |
| US5633182A (en) * | 1991-12-02 | 1997-05-27 | Canon Kabushiki Kaisha | Method of manufacturing an image display device with reduced cell gap variation |
| US5834344A (en) * | 1996-07-17 | 1998-11-10 | Industrial Technology Research Institute | Method for forming high performance thin film transistor structure |
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