KR910008812A - As vapor pressure control method to secure single crystal during GaAs single crystal growth - Google Patents

As vapor pressure control method to secure single crystal during GaAs single crystal growth Download PDF

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Publication number
KR910008812A
KR910008812A KR1019890015225A KR890015225A KR910008812A KR 910008812 A KR910008812 A KR 910008812A KR 1019890015225 A KR1019890015225 A KR 1019890015225A KR 890015225 A KR890015225 A KR 890015225A KR 910008812 A KR910008812 A KR 910008812A
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KR
South Korea
Prior art keywords
single crystal
vapor pressure
control method
pressure control
crystal growth
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Application number
KR1019890015225A
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Korean (ko)
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KR920010134B1 (en
Inventor
오명환
고한준
이호성
박기석
Original Assignee
홍종선
금성전선 주식회사
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Priority to KR1019890015225A priority Critical patent/KR920010134B1/en
Publication of KR910008812A publication Critical patent/KR910008812A/en
Application granted granted Critical
Publication of KR920010134B1 publication Critical patent/KR920010134B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428

Abstract

내용 없음No content

Description

GaAs 단결정 성장시 단결정 확보를 위한 As증기압 제어방법As vapor pressure control method to secure single crystal during GaAs single crystal growth

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1 도는 본 발명을 설명하기 위한 HB 단결정 제조장치의 단면도1 is a cross-sectional view of the HB single crystal manufacturing apparatus for explaining the present invention

제 2 도는 본 발명의 설명을 위한 GF 단결정 제조장치의 단면도.2 is a cross-sectional view of the GF single crystal manufacturing apparatus for explaining the present invention.

Claims (1)

통상의 석영관(1)을 사용하는 HB, VB, GF 경사 동력 단결정 제조방법에 있어서, 결정원료 용액(3)이 같는 평형 해리압을 상쇄할 만한 As증기압 유지 분량만큼의 과잉As(4)를 석영관(1)내에 정산 장입하여 As증기압 제어하는 것을 특징으로 한 GaAs단결정 성장시 단결정 확보를 위한 As증기압 제어방법.In the method for producing HB, VB, and GF gradient power single crystals using the ordinary quartz tube 1, the excess As (4) as much as the amount of As vapor pressure maintained to offset the equilibrium dissociation pressure of the same as the crystal raw material solution 3 is obtained. As vapor pressure control method for securing a single crystal during GaAs single crystal growth, characterized in that it is charged into the quartz tube (1) to control As vapor pressure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890015225A 1989-10-21 1989-10-21 As gas pressure controlling method of epitaxial growing process KR920010134B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890015225A KR920010134B1 (en) 1989-10-21 1989-10-21 As gas pressure controlling method of epitaxial growing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890015225A KR920010134B1 (en) 1989-10-21 1989-10-21 As gas pressure controlling method of epitaxial growing process

Publications (2)

Publication Number Publication Date
KR910008812A true KR910008812A (en) 1991-05-31
KR920010134B1 KR920010134B1 (en) 1992-11-16

Family

ID=19290932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015225A KR920010134B1 (en) 1989-10-21 1989-10-21 As gas pressure controlling method of epitaxial growing process

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KR (1) KR920010134B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091386A (en) * 2000-03-15 2001-10-23 오명환 Method for Controlling As Vapor Pressure to Ensure Monocrystal on Growing GaAs Monocrystal by Means of VGF Method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010091386A (en) * 2000-03-15 2001-10-23 오명환 Method for Controlling As Vapor Pressure to Ensure Monocrystal on Growing GaAs Monocrystal by Means of VGF Method

Also Published As

Publication number Publication date
KR920010134B1 (en) 1992-11-16

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