KR910008716B1 - 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 - Google Patents

증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 Download PDF

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Publication number
KR910008716B1
KR910008716B1 KR1019880701199A KR880701199A KR910008716B1 KR 910008716 B1 KR910008716 B1 KR 910008716B1 KR 1019880701199 A KR1019880701199 A KR 1019880701199A KR 880701199 A KR880701199 A KR 880701199A KR 910008716 B1 KR910008716 B1 KR 910008716B1
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KR
South Korea
Prior art keywords
composition
deposition
oxide
yttrium
titanium oxide
Prior art date
Application number
KR1019880701199A
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English (en)
Korean (ko)
Other versions
KR890700927A (ko
Inventor
쯔보이슌고
요시후미 마쯔시따
Original Assignee
미쓰비시덴기 가부시기가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시덴기 가부시기가이샤, 시기 모리야 filed Critical 미쓰비시덴기 가부시기가이샤
Publication of KR890700927A publication Critical patent/KR890700927A/ko
Application granted granted Critical
Publication of KR910008716B1 publication Critical patent/KR910008716B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sustainable Energy (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)
KR1019880701199A 1987-02-04 1988-02-04 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법 KR910008716B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62023946A JPS63192856A (ja) 1987-02-04 1987-02-04 蒸着用酸化イツトリウム組成物及び反射防止膜の製造方法
JP62-23946 1987-02-04
PCT/JP1988/000103 WO1988005963A1 (en) 1987-02-04 1988-02-04 Yttrium oxide composition for use in evaporation and process for preparing anti-reflection film thereof

Publications (2)

Publication Number Publication Date
KR890700927A KR890700927A (ko) 1989-04-28
KR910008716B1 true KR910008716B1 (ko) 1991-10-19

Family

ID=12124709

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880701199A KR910008716B1 (ko) 1987-02-04 1988-02-04 증착용 산화 이트륨 조성물 및 반사 방지막의 제조 방법

Country Status (6)

Country Link
JP (1) JPS63192856A (fi)
KR (1) KR910008716B1 (fi)
CN (1) CN1017164B (fi)
DE (2) DE3890060C2 (fi)
SE (1) SE8803506D0 (fi)
WO (1) WO1988005963A1 (fi)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850371B2 (ja) * 1989-06-19 1999-01-27 松下電器産業株式会社 画像出力装置
CN102140621A (zh) * 2011-03-10 2011-08-03 苏州大学 一种致密复合二氧化钛薄膜的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246043A (en) * 1979-12-03 1981-01-20 Solarex Corporation Yttrium oxide antireflective coating for solar cells
DE3613501A1 (de) * 1986-04-22 1987-10-29 Stefan Dipl Ing Donnerhack Verfahren zur antikatalytischen beschichtung von thermoelementen

Also Published As

Publication number Publication date
DE3890060C2 (de) 1990-08-16
CN87107819A (zh) 1988-08-17
CN1017164B (zh) 1992-06-24
SE8803506L (sv) 1988-10-03
DE3890060T (fi) 1989-03-23
JPS63192856A (ja) 1988-08-10
SE8803506D0 (sv) 1988-10-03
KR890700927A (ko) 1989-04-28
WO1988005963A1 (en) 1988-08-11

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