KR910004854A - Single Crystal Manufacturing Equipment - Google Patents

Single Crystal Manufacturing Equipment Download PDF

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Publication number
KR910004854A
KR910004854A KR1019890012575A KR890012575A KR910004854A KR 910004854 A KR910004854 A KR 910004854A KR 1019890012575 A KR1019890012575 A KR 1019890012575A KR 890012575 A KR890012575 A KR 890012575A KR 910004854 A KR910004854 A KR 910004854A
Authority
KR
South Korea
Prior art keywords
single crystal
crystal manufacturing
manufacturing apparatus
manufacturing equipment
angle
Prior art date
Application number
KR1019890012575A
Other languages
Korean (ko)
Other versions
KR940004640B1 (en
Inventor
박주성
강진기
박해성
Original Assignee
한형수
삼성코닝 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한형수, 삼성코닝 주식회사 filed Critical 한형수
Priority to KR1019890012575A priority Critical patent/KR940004640B1/en
Publication of KR910004854A publication Critical patent/KR910004854A/en
Application granted granted Critical
Publication of KR940004640B1 publication Critical patent/KR940004640B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.No content.

Description

단결정 제조장치Single Crystal Manufacturing Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 액체봉지인상법에 따른 단결정 성장장치의 개략도.Figure 3 is a schematic diagram of a single crystal growth apparatus according to the liquid encapsulation lift method of the present invention.

Claims (4)

액체봉지인상법에 의한 GaAs단결정 제조장치에 있어서, 액체봉지제인 B2O3층(6)의 직상부에 각도(α)를 갖는 열차폐판(6″)과 결정표면으로부터 적당한 간격과 길이로 설치되는 것을 특징으로 하는 단결정 제조장치.In the GaAs single crystal manufacturing apparatus by the liquid encapsulation method, it is provided at an appropriate interval and length from a heat shielding plate 6 ″ having an angle α and a crystal surface directly on the B 2 O 3 layer 6 which is a liquid encapsulation agent. Single crystal manufacturing apparatus characterized in that. 제1항에 있어서, 각도(α)가 30~60°인 것을 특징으로 하는 단결정 제조장치.The single crystal production apparatus according to claim 1, wherein the angle α is 30 to 60 degrees. 제1항에 있어서, 열차폐판(6″)과 결정표면으로 부터의 거리가 3~20mm인 것을 특징으로 하는 단결정 제조장치.A single crystal manufacturing apparatus according to claim 1, wherein a distance from the heat shield plate (6 ″) and the crystal surface is 3 to 20 mm. 제1항에 있어서, 결정표면과 같은 방향의 열차폐판 길이가 4~20mm인 것을 특징으로 하는 단결정 제조장치.The single crystal manufacturing apparatus according to claim 1, wherein the length of the heat shield plate in the same direction as the crystal surface is 4 to 20 mm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012575A 1989-08-31 1989-08-31 Apparatus for manufacturing single crystals KR940004640B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012575A KR940004640B1 (en) 1989-08-31 1989-08-31 Apparatus for manufacturing single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012575A KR940004640B1 (en) 1989-08-31 1989-08-31 Apparatus for manufacturing single crystals

Publications (2)

Publication Number Publication Date
KR910004854A true KR910004854A (en) 1991-03-29
KR940004640B1 KR940004640B1 (en) 1994-05-27

Family

ID=19289505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890012575A KR940004640B1 (en) 1989-08-31 1989-08-31 Apparatus for manufacturing single crystals

Country Status (1)

Country Link
KR (1) KR940004640B1 (en)

Also Published As

Publication number Publication date
KR940004640B1 (en) 1994-05-27

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