KR910002718A - 니오브산 칼륨-리듐 결정 - Google Patents
니오브산 칼륨-리듐 결정 Download PDFInfo
- Publication number
- KR910002718A KR910002718A KR1019900010936A KR900010936A KR910002718A KR 910002718 A KR910002718 A KR 910002718A KR 1019900010936 A KR1019900010936 A KR 1019900010936A KR 900010936 A KR900010936 A KR 900010936A KR 910002718 A KR910002718 A KR 910002718A
- Authority
- KR
- South Korea
- Prior art keywords
- lidium
- crystals
- potassium niobate
- mole
- melt
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 니오브산칼륨-리듐(K2O)0.3(Li2O)0.7-x(Nb2O5)x(Nb2O5)x의 조성물과 결정체 단위셀의 C축의 길이사이의 관계를 도시한 도시도,
제2도는 본 발명에 따른 장치의 도식적인 도시도,
제3도는 본 발명에 따른 또 다른 장치의 도식적인 도시도.
Claims (6)
- 니오브산 칼륨-리듐 제조 방법에 있어서, 스토이치오메트릭 니오브산 칼륨-리듐은 아래 공식에 따른 제조되는 것을 특징으로 하는 방법.(K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임.
- 제1항에 있어서, 결정은 금속이온의 원자량이 아래비율로 선택되는 조성물의 용해물 냉각 함으로써 제조되는 것을 특징으로 하는 방법.K의 30몰%, Li의 27몰% 및 Nb의 43몰%임.
- 제2항에 있어서, LiNbO의 형태인 Li는 용해물을 제조하는데 사용되는 것을 특징으로 하는 방법.
- 제2항 또는 제3항에 있어서, 1050 내지 900℃의 온도 범위에서 용해물의 냉각속도는 1℃/hr 보다 적은 것을 특징으로 하는 방법.
- 아래 공식에 의해 나타나는 조성물을 특징으로 하는 니오브산 칼륨-리듐 결정.(K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임
- 기본 광파가 제2하모니파를 형성하기 위해서 비선형 광학 매체를 통과하는 광파의 주파수를 증첩하는 장치에 잇어서, 상기 기본 광파는 반도체 레이저에 의해 발생되고 비선형 광학 매체는 아래 공식에 따른 스토이치오메트릭니오브산 칼륨-니듐 결정인 것을 특징으로 하는 장치.(K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8901875A NL8901875A (nl) | 1989-07-20 | 1989-07-20 | Kalium-lithium niobaat kristallen. |
NL8901875 | 1989-07-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910002718A true KR910002718A (ko) | 1991-02-26 |
Family
ID=19855072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900010936A KR910002718A (ko) | 1989-07-20 | 1990-07-19 | 니오브산 칼륨-리듐 결정 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5562768A (ko) |
EP (1) | EP0409339B1 (ko) |
JP (1) | JP3035557B2 (ko) |
KR (1) | KR910002718A (ko) |
DE (1) | DE69013600T2 (ko) |
NL (1) | NL8901875A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69207695T2 (de) * | 1991-10-01 | 1996-07-25 | Philips Electronics Nv | Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen |
JPH08339002A (ja) * | 1995-04-10 | 1996-12-24 | Ngk Insulators Ltd | 第二高調波発生素子およびその製造方法 |
JPH1010348A (ja) * | 1996-06-26 | 1998-01-16 | Ngk Insulators Ltd | 光導波路デバイスの製造方法 |
JP3531803B2 (ja) | 1999-02-24 | 2004-05-31 | 株式会社豊田中央研究所 | アルカリ金属含有ニオブ酸化物系圧電材料組成物 |
US6690025B2 (en) * | 2001-05-11 | 2004-02-10 | Lightwave Microsystems Corporation | Devices for etch loading planar lightwave circuits |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911319A (ko) * | 1972-06-01 | 1974-01-31 |
-
1989
- 1989-07-20 NL NL8901875A patent/NL8901875A/nl unknown
-
1990
- 1990-07-16 DE DE69013600T patent/DE69013600T2/de not_active Expired - Fee Related
- 1990-07-16 EP EP90201923A patent/EP0409339B1/en not_active Expired - Lifetime
- 1990-07-17 JP JP2187361A patent/JP3035557B2/ja not_active Expired - Fee Related
- 1990-07-19 KR KR1019900010936A patent/KR910002718A/ko active IP Right Grant
-
1991
- 1991-12-12 US US07/807,407 patent/US5562768A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0409339A1 (en) | 1991-01-23 |
NL8901875A (nl) | 1991-02-18 |
DE69013600D1 (de) | 1994-12-01 |
JPH0354117A (ja) | 1991-03-08 |
EP0409339B1 (en) | 1994-10-26 |
DE69013600T2 (de) | 1995-05-11 |
US5562768A (en) | 1996-10-08 |
JP3035557B2 (ja) | 2000-04-24 |
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