KR910002718A - 니오브산 칼륨-리듐 결정 - Google Patents

니오브산 칼륨-리듐 결정 Download PDF

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Publication number
KR910002718A
KR910002718A KR1019900010936A KR900010936A KR910002718A KR 910002718 A KR910002718 A KR 910002718A KR 1019900010936 A KR1019900010936 A KR 1019900010936A KR 900010936 A KR900010936 A KR 900010936A KR 910002718 A KR910002718 A KR 910002718A
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South Korea
Prior art keywords
lidium
crystals
potassium niobate
mole
melt
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KR1019900010936A
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English (en)
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오우베르 케르크 마르틴
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프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
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Application filed by 프레데릭 얀 스미트, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 프레데릭 얀 스미트
Publication of KR910002718A publication Critical patent/KR910002718A/ko

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/355Non-linear optics characterised by the materials used
    • G02F1/3551Crystals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G33/00Compounds of niobium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/30Niobates; Vanadates; Tantalates
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • G02F1/377Non-linear optics for second-harmonic generation in an optical waveguide structure

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

니오브산 칼륨-리듐 결정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 니오브산칼륨-리듐(K2O)0.3(Li2O)0.7-x(Nb2O5)x(Nb2O5)x의 조성물과 결정체 단위셀의 C축의 길이사이의 관계를 도시한 도시도,
제2도는 본 발명에 따른 장치의 도식적인 도시도,
제3도는 본 발명에 따른 또 다른 장치의 도식적인 도시도.

Claims (6)

  1. 니오브산 칼륨-리듐 제조 방법에 있어서, 스토이치오메트릭 니오브산 칼륨-리듐은 아래 공식에 따른 제조되는 것을 특징으로 하는 방법.
    (K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′
    여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임.
  2. 제1항에 있어서, 결정은 금속이온의 원자량이 아래비율로 선택되는 조성물의 용해물 냉각 함으로써 제조되는 것을 특징으로 하는 방법.
    K의 30몰%, Li의 27몰% 및 Nb의 43몰%임.
  3. 제2항에 있어서, LiNbO의 형태인 Li는 용해물을 제조하는데 사용되는 것을 특징으로 하는 방법.
  4. 제2항 또는 제3항에 있어서, 1050 내지 900℃의 온도 범위에서 용해물의 냉각속도는 1℃/hr 보다 적은 것을 특징으로 하는 방법.
  5. 아래 공식에 의해 나타나는 조성물을 특징으로 하는 니오브산 칼륨-리듐 결정.
    (K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′
    여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임
  6. 기본 광파가 제2하모니파를 형성하기 위해서 비선형 광학 매체를 통과하는 광파의 주파수를 증첩하는 장치에 잇어서, 상기 기본 광파는 반도체 레이저에 의해 발생되고 비선형 광학 매체는 아래 공식에 따른 스토이치오메트릭니오브산 칼륨-니듐 결정인 것을 특징으로 하는 장치.
    (K2O)0.3(Li2O)0.2+a(Nb2O5)0.5+b′
    여기서 -0.01〈a〈0.01이고 -0.01〈b〈0.01임.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900010936A 1989-07-20 1990-07-19 니오브산 칼륨-리듐 결정 KR910002718A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8901875A NL8901875A (nl) 1989-07-20 1989-07-20 Kalium-lithium niobaat kristallen.
NL8901875 1989-07-20

Publications (1)

Publication Number Publication Date
KR910002718A true KR910002718A (ko) 1991-02-26

Family

ID=19855072

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010936A KR910002718A (ko) 1989-07-20 1990-07-19 니오브산 칼륨-리듐 결정

Country Status (6)

Country Link
US (1) US5562768A (ko)
EP (1) EP0409339B1 (ko)
JP (1) JP3035557B2 (ko)
KR (1) KR910002718A (ko)
DE (1) DE69013600T2 (ko)
NL (1) NL8901875A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69207695T2 (de) * 1991-10-01 1996-07-25 Philips Electronics Nv Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen
JPH08339002A (ja) * 1995-04-10 1996-12-24 Ngk Insulators Ltd 第二高調波発生素子およびその製造方法
JPH1010348A (ja) * 1996-06-26 1998-01-16 Ngk Insulators Ltd 光導波路デバイスの製造方法
JP3531803B2 (ja) 1999-02-24 2004-05-31 株式会社豊田中央研究所 アルカリ金属含有ニオブ酸化物系圧電材料組成物
US6690025B2 (en) * 2001-05-11 2004-02-10 Lightwave Microsystems Corporation Devices for etch loading planar lightwave circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911319A (ko) * 1972-06-01 1974-01-31

Also Published As

Publication number Publication date
EP0409339A1 (en) 1991-01-23
NL8901875A (nl) 1991-02-18
DE69013600D1 (de) 1994-12-01
JPH0354117A (ja) 1991-03-08
EP0409339B1 (en) 1994-10-26
DE69013600T2 (de) 1995-05-11
US5562768A (en) 1996-10-08
JP3035557B2 (ja) 2000-04-24

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