KR900700859A - Electro-optic modulator - Google Patents

Abstract

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Description

Electro-optic modulator

Since this is an open matter, no full text was included.

The accompanying drawings are schematic diagrams of an electro-optic modulator constructed in accordance with the present invention.

Claims (14)

The inner reflector formed of the first set of epitaxial single crystal layers on the unitary substrate having a specific refractive index and the outer reflector formed of the resonator layer and the second set of epitaxial single crystal layers are successively laminated. At least one portion of the inner reflector, the substrate and the resonator layer consists of one or more, has a p-type or n-type electrical conductivity, and at least the other portion of the structure has one or more of the outer reflector and resonator layers Consisting of more than one and having an n- or p-type electrical conductivity but having a different conduction form than the one part, the structure also has an ohmic contact with the one part and the other part of the structure, respectively. A first and second electrically conducting means for producing a reverse bias to said structure by applying a potential to said electrically conducting means. Is applied to cause an electric field to be formed in the resonator layer, whereby the refractive index of the resonator layer is varied by changing the electric field in response to a change in the bias, so that in use, the shade is changed to correspondingly modulate the light passing through the modulator. Electro-optic modulator made. r ₁ = r ₁ exp (jφ ₁ ) where r ₁ is the reflectance size of the layer included in the inner reflector, φ ₁ is the phase shift with respect to the reflectance and ro = r ₂ exp (jφ ₂ ), where and r ₂ is the reflectance magnitude of the layer included in the outer reflector, and φ ₂ is the phase shift with respect to the reflectance. According to claim 1 or 2, wherein the refractive index of the layer of the inside reflector adjacent to the resonator layer (N _b) and a refractive index of a layer of the outside reflector immediately adjacent the resonator layer (N _a) is applied which special operation the modulator the refractive index of the resonator layer at a voltage (N _r (V) and N _a <N _r (O) is an electro-optic modulator, it characterized in that a relationship of _{N b <N r (O)} . The method according to claim 1 or 2, wherein the refractive index N _b of the layer of the inner reflector adjacent to the resonator layer and the refractive index N _a of the layer of the outer reflector immediately adjacent to the resonator layer are any particular applied to the modulator. the refractive index of the resonator layer at the operating voltage (N _r (V) and N _a <N _r (O) is an electro-optic modulator, it characterized in that a relationship of _{N b <N r (O)} . The layer according to any one of claims 1 to 4, wherein the layers including the reflector alternately have a high refractive index and a low refractive index, and have a thickness at which a cyclic periodicity or an odd number of thicknesses of an optical thickness 入 / 2 is achieved. Represents the longest of the many possible discrete wavelengths of light to be modulated by the special device, and in other examples the configuration therefore the refractive index of the reflector achieves a cyclic periodicity with an optical thickness of ⁄ / 2 or any odd multiple thickness Electro-optic modulator, characterized in that it can be changed continuously or stepwise. 5. The electro-optic modulator according to any one of claims 1 to 4, wherein the configuration and therefore the refractive index of the reflector is changed continuously or stepwise such that a periodicity of the configuration with an optical thickness of / 2 or any odd multiple thickness is achieved. . 7. An electro-optic modulator according to any one of claims 1 to 6, wherein the substrate and subsequent material layers are single crystals of a material selected from the group comprising gallium, aluminum and arsenic bonded in a special proportion in a special layer. The electro-optic modulator according to any one of claims 1 to 6, wherein the substrate and subsequent material layers are single crystals of a material selected from the group comprising gallium, indium, arsenic and phosphorus bonded in a special proportion in a special layer. 7. The electrical method of any one of claims 1 to 6, wherein the substrate and subsequent material layers are single crystals of a material selected from the group comprising gallium, indium, aluminum, arsenic and attimon bonded in special proportions in a special layer. Optical modulator. 7. An electro-optic modulator according to any one of the preceding claims, wherein the substrate and subsequent material layers are single crystals of a material selected from the group comprising mercury, cadmium, manganese and terulium combined in special proportions in a special layer. 7. An electro-optic modulator according to any one of the preceding claims, wherein the substrate and subsequent material layers are single crystals of a material selected from the group comprising lead, sulfur tellurium and selenium bonded in a special proportion in a special layer. 12. The electro-optic modulator according to any one of claims 7 to 11, wherein the layers are in turn composed of fine collisions of superlattice or multi quantum crystal structures. 12. The electro-optic modulator according to any one of claims 7 to 11, wherein the collision is of continuous grade in configuration. 13. The electro-optic modulator of claim 12, wherein the operating wavelength of the electro-optic modulator is selected to correspond to an excitation region directly below the fundamental energy gap of the resonator layer. ※ Note: The disclosure is based on the initial application.