KR900017195A - Semiconductor devices - Google Patents

Abstract

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Description

Semiconductor devices

Since this is an open matter, no full text was included.

1 is a diagram showing an array of gate detachable unit devices in a first embodiment of the present invention;

2 is an enlarged plan view of the unit apparatus of FIG. 1;

3A is a cross-sectional view of the unit device taken along line A-A 'in FIG.

Claims (13)

A semiconductor device comprising a plurality of arranged unit semiconductor devices, wherein the unit semiconductor device and the elements in the semiconductor device are selectively connected to each other by a wire, so as to constitute a preferable logic circuit, wherein the unit semiconductor device And at least one first insulated-gate field effect transistor of a first conductivity type and a second insulated-gate field effect transistor of a second conductivity type, wherein the second insulated-gate type field effect transistor comprises: Disposed adjacent to one transistor, having a separate gate electrode from a gate electrode of the first transistor, wherein the gate electrode of each transistor has at least one gate terminal portion at a side adjacent to each other, and the gate terminal portion of the first field effect transistor Having at least one first wire connection and a second wire connection The semiconductor device according to claim. The semiconductor device according to claim 1, wherein the gate terminal portions of the first and second transistors are completely connected to the gate electrode, and are each formed of the same layer of the gate electrode. 3. The semiconductor device of claim 2, wherein the semiconductor device has a channel region in which the first and second transistors face in the same direction. 4. The semiconductor device according to claim 3, wherein the gate electrodes of the first and second transistors are formed in regions different from the source or drain regions of the transistor and have the gate terminal portion designed wider than the gate electrode. The semiconductor device according to claim 4, wherein the first wire connection portion of the first transistor and the gate terminal portion of the second transistor are arranged on first and second parallel grid lines, respectively, and the first and second grid lines are subsequently arranged. And a semiconductor device included in a plurality of side and vertical lines defined by a route to be taken along the wire. 6. The semiconductor device of claim 5, wherein the first and second wire connecting portions of the gate terminal portion of the first transistor are arranged on third and fourth grid lines, respectively, and the third and fourth grid lines are arranged on the first and fourth grid lines. 2 A semiconductor device perpendicular to the grid line. The semiconductor device according to claim 5, wherein the first and second wire connecting portions of the gate terminal portion of the first transistor are arranged on a third grid line perpendicular to the first and second grid lines. The semiconductor device of claim 7, wherein the unit semiconductor device has a source or drain region common to that of the first transistor, and a first non-conductive type third insulator having a gate electrode arranged in parallel with a gate electrode of the first transistor. A fourth insulated-gate field effect transistor of a second conductivity type having a source or drain region common to that of the gate type field effect transistor and the second transistor, and a gate electrode arranged parallel to the gate electrode of the second transistor, is provided. And further comprising a wire junction region formed in an area surrounded by the first, second, third and fourth gate electrodes of the first, second, third and fourth transistors. The semiconductor device according to claim 8, wherein the wire junction region is formed of the same layer of the gate electrode. The semiconductor device according to claim 6, wherein the gate terminal portion of the first transistor is substantially crank-type. The semiconductor device according to claim 9, wherein the gate terminal portion of the first transistor is substantially rectangular. A semiconductor device comprising a plurality of unit semiconductor devices arranged in a plurality, that is, a semiconductor device in which the unit semiconductor device and the elements in the semiconductor device are selectively connected to each other by wires so as to constitute a desired logic circuit, wherein each unit semiconductor device is The first and second insulated gate field effect transistors of the first conductivity type and the third and insulated gate type field effect transistors of the second conductivity type include the gate electrodes arranged in parallel with each other. And the third and fourth transistors have gate electrodes arranged in parallel with each other, each transistor has a gate terminal portion on a side adjacent to the other transistor, and the gate terminal portion of the gate electrode of the first transistor is At least one first formed completely at an end of the gate electrode Following connection, and semiconductor device characterized in that it extends from the wire connecting portion and a second wire connection portion located between the third and fourth outer gate transistor wherein the gate terminal portions of the electrodes. A semiconductor device comprising a plurality of unit semiconductor devices arranged in a plurality, that is, a semiconductor device in which the unit semiconductor device and the elements in the semiconductor device are selectively connected to each other by wires so as to constitute a desired logic circuit, wherein each unit semiconductor device is First and second insulated gate field effect transistors of the first conductivity type and third and fourth insulated gate type field effect transistors of the second conductivity type, wherein the first and second transistors are arranged in parallel with each other. A gate electrode having a gate electrode arranged such that the third and fourth transistors are arranged parallel to each other, each transistor having a gate terminal portion of the gate electrode on a side adjacent to the other transistor, and a first and second transistors At least one first and second wire connection of the gate terminal portion of the gate electrode to Including, to the wire bonding area, the semiconductor device characterized in that the heongseong in the area surrounded by the gate electrode of the first, second, and third and fourth transistors. ※ Note: The disclosure is based on the initial application.