KR900006556A - Metal line formation method of device using chemical vapor deposition - Google Patents

Metal line formation method of device using chemical vapor deposition Download PDF

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Publication number
KR900006556A
KR900006556A KR1019880013937A KR880013937A KR900006556A KR 900006556 A KR900006556 A KR 900006556A KR 1019880013937 A KR1019880013937 A KR 1019880013937A KR 880013937 A KR880013937 A KR 880013937A KR 900006556 A KR900006556 A KR 900006556A
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KR
South Korea
Prior art keywords
vapor deposition
chemical vapor
metal line
formation method
line formation
Prior art date
Application number
KR1019880013937A
Other languages
Korean (ko)
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KR960003732B1 (en
Inventor
윤기완
Original Assignee
최근선
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1019880013937A priority Critical patent/KR960003732B1/en
Publication of KR900006556A publication Critical patent/KR900006556A/en
Application granted granted Critical
Publication of KR960003732B1 publication Critical patent/KR960003732B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음No content

Description

화학 증착(Chemical Vapor Deposition)법을 이용한 다바이스의 메탈라인 형성 방법Metal line formation method of device using chemical vapor deposition

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도의 (가) 내지 (마)는 종래 다비이스의 메탈라인 형성방법 공정도,(A) to (E) of Figure 1 is a process diagram of a metal line forming method of the conventional device,

제2도의 (가) 내지 (마)는 본 발명에 의한 디바이스의 메탈라인 형성 방법 공정도.(A) to (e) of FIG. 2 are process charts for forming a metal line of a device according to the present invention.

Claims (1)

Si기판(1)에 산화물층(2)이 형성되고, 그 상측부에 PR(3)이 형성되어 포로에칭한 후, PR(3)이 제거된 산화물층(2)에 Mo(molybdenum)마스크(6)로 Si를 이온주입하여 그 Si이온이 메탈이 성장될 수 있는 핵 생성 장소가 되게하고, 이후 Mo마스크를 제거한 다음, 화학증착법으로 W, Mo, Ta등의 금속층(7)을 증착 형성하여 Si이온이 주입된 부분에만 선택적으로 메탈라인이 형성됨을 특징으로 하는 화학 증착(Chemical Vapor Deposition)법을 이용한 디바이스의 메탈라인 형성 방법.An oxide layer 2 is formed on the Si substrate 1, PR (3) is formed on the upper side thereof, and captively etched, and then a Mo (molybdenum) mask is applied to the oxide layer 2 from which the PR (3) is removed. 6) ion implantation of Si to make the Si ion become a nucleation site where the metal can be grown, and then remove the Mo mask, and then deposit a metal layer 7 of W, Mo, Ta, etc. by chemical vapor deposition. Metal line formation method of the device using the chemical vapor deposition (Chemical Vapor Deposition) method characterized in that the metal line is selectively formed only in the portion implanted with Si ions. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880013937A 1988-10-25 1988-10-25 Method for forming a metalline of a device by cvd KR960003732B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880013937A KR960003732B1 (en) 1988-10-25 1988-10-25 Method for forming a metalline of a device by cvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880013937A KR960003732B1 (en) 1988-10-25 1988-10-25 Method for forming a metalline of a device by cvd

Publications (2)

Publication Number Publication Date
KR900006556A true KR900006556A (en) 1990-05-08
KR960003732B1 KR960003732B1 (en) 1996-03-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880013937A KR960003732B1 (en) 1988-10-25 1988-10-25 Method for forming a metalline of a device by cvd

Country Status (1)

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KR (1) KR960003732B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253561B1 (en) * 1992-08-28 2000-05-01 김영환 Method of depositing w on oxide of semiconductor device without adhesion layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253561B1 (en) * 1992-08-28 2000-05-01 김영환 Method of depositing w on oxide of semiconductor device without adhesion layer

Also Published As

Publication number Publication date
KR960003732B1 (en) 1996-03-21

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