KR900001006A - 국부 손상 부품의 복원방법 - Google Patents

국부 손상 부품의 복원방법 Download PDF

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Publication number
KR900001006A
KR900001006A KR1019890008912A KR890008912A KR900001006A KR 900001006 A KR900001006 A KR 900001006A KR 1019890008912 A KR1019890008912 A KR 1019890008912A KR 890008912 A KR890008912 A KR 890008912A KR 900001006 A KR900001006 A KR 900001006A
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KR
South Korea
Prior art keywords
damaged
damaged parts
local damaged
repair local
repair
Prior art date
Application number
KR1019890008912A
Other languages
English (en)
Inventor
미쉘 바르귀
디디에르 보야
도미니끄 겔라르
삐에르 네떼르
Original Assignee
원본미기재
꼬뮈렉스 소시에떼 뿌르 라 꽁베르시옹 드 뤼라늄 앙 메딸 에 엑사플뤼오뤼르 에스.아
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 꼬뮈렉스 소시에떼 뿌르 라 꽁베르시옹 드 뤼라늄 앙 메딸 에 엑사플뤼오뤼르 에스.아 filed Critical 원본미기재
Publication of KR900001006A publication Critical patent/KR900001006A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49718—Repairing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

내용 없음

Description

국부 손상 부품의 복원방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 국부적으로 손상된 표면을 가진 부품의 보수 방법에 있어서, 바람직한 방법으로 상기 표면의 손상된 부위에 부품을 구성하는 재료를 부착시키고, 상기 부품의 상기 표면을 원래의 상태가 은폐되도록 기계 가공하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 화학적 증착에 의하여 부착이 이루어지는 것을 특징으로 하는 방법.
  3. 제1항 또는 제2항에 있어서, 상기 표면의 손상부를 국부적으로 가열하여 바람직한 부착이 이루어지는 것을 특징으로 하는 방법.
  4. 제1항 내지 제3항중 어느 하나에 있어서, 상기 표면의 손상부에 반응 가스를 선택적으로 분사하여 바람직한 부착이 이루어지는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890008912A 1988-06-28 1989-06-28 국부 손상 부품의 복원방법 KR900001006A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8808665A FR2633449B1 (fr) 1988-06-28 1988-06-28 Procede de remise en forme de pieces localement deteriorees, notamment anticathodes
FR88-08665 1988-06-28

Publications (1)

Publication Number Publication Date
KR900001006A true KR900001006A (ko) 1990-01-31

Family

ID=9367801

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008912A KR900001006A (ko) 1988-06-28 1989-06-28 국부 손상 부품의 복원방법

Country Status (6)

Country Link
US (1) US5013274A (ko)
EP (1) EP0349414A1 (ko)
JP (1) JPH0266846A (ko)
KR (1) KR900001006A (ko)
CA (1) CA1334155C (ko)
FR (1) FR2633449B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121642A (ko) * 2019-04-16 2020-10-26 주식회사 티씨케이 반도체 제조용 부품의 재생 방법 및 재생된 반도체 제조용 부품

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69404347D1 (de) * 1993-02-16 1997-08-28 Sumitomo Electric Industries Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung
US20020076573A1 (en) * 2000-12-19 2002-06-20 Neal James Wesley Vapor deposition repair of superalloy articles
FR3018081B1 (fr) 2014-03-03 2020-04-17 Acerde Procede de reparation d'une anode pour l'emission de rayons x et anode reparee
CN112301317B (zh) * 2020-10-30 2021-05-18 连云港恒顺工业科技有限公司 爪式真空泵转子表面处理工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT278184B (de) * 1967-08-28 1970-01-26 Plansee Metallwerk Drehanode für Röntgenröhren
GB2107628B (en) * 1981-10-17 1985-08-21 Rolls Royce Improvements in or relating to filling fissures in metal articles
US4562332A (en) * 1984-03-26 1985-12-31 Rockwell International Corporation Surface crack healing with high-energy beam
US4533449A (en) * 1984-04-16 1985-08-06 The Perkin-Elmer Corporation Rapid surface figuring by selective deposition
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser
US4730093A (en) * 1984-10-01 1988-03-08 General Electric Company Method and apparatus for repairing metal in an article
DD244929A1 (de) * 1985-12-23 1987-04-22 Ibr Fa Dr Verfahren zum regenerieren verschlissener oberflaechen
JPS6364236A (ja) * 1986-09-05 1988-03-22 Hitachi Ltd 含浸形陰極の製造方法
US4778693A (en) * 1986-10-17 1988-10-18 Quantronix Corporation Photolithographic mask repair system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200121642A (ko) * 2019-04-16 2020-10-26 주식회사 티씨케이 반도체 제조용 부품의 재생 방법 및 재생된 반도체 제조용 부품
KR20210068362A (ko) * 2019-04-16 2021-06-09 주식회사 티씨케이 반도체 제조용 부품의 재생 방법 및 재생된 반도체 제조용 부품

Also Published As

Publication number Publication date
FR2633449B1 (fr) 1990-10-26
US5013274A (en) 1991-05-07
FR2633449A1 (fr) 1989-12-29
CA1334155C (en) 1995-01-31
JPH0266846A (ja) 1990-03-06
EP0349414A1 (fr) 1990-01-03

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