KR890016194A - Copper alloy for electronic device and manufacturing method thereof - Google Patents

Copper alloy for electronic device and manufacturing method thereof Download PDF

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Publication number
KR890016194A
KR890016194A KR1019890004455A KR890004455A KR890016194A KR 890016194 A KR890016194 A KR 890016194A KR 1019890004455 A KR1019890004455 A KR 1019890004455A KR 890004455 A KR890004455 A KR 890004455A KR 890016194 A KR890016194 A KR 890016194A
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copper alloy
copper
weight
phosphorus
remainder
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KR1019890004455A
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KR930006292B1 (en
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소노겐지 구보
다까시 나까지마
다게후미 이또
기미오 하시쯔메
신이찌 이와세
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시기 모리야
미쯔비시덴끼 가부시끼가이샤
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Priority claimed from JP63089383A external-priority patent/JPH01263243A/en
Priority claimed from JP63288041A external-priority patent/JPH0733563B2/en
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4383—Reworking
    • H01L2224/43847—Reworking with a mechanical process, e.g. with flattening of the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Conductive Materials (AREA)
  • Soft Magnetic Materials (AREA)

Abstract

내용 없음No content

Description

전자기기용 동합금 및 그의 제조방법Copper alloy for electronic device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도 내지 제 3 도는 각각 본 발명의 제조방법은 도시한 공정도.1 to 3 are each a process diagram showing a manufacturing method of the present invention.

Claims (10)

중량%로 니켈 1.0∼8%, 인 0.1∼0.8% 및 실리콘 0.06∼1%를 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 것을 특징으로 하는 전자기기용 동합금.A copper alloy for electronic equipment containing 1.0 to 8% by weight of nickel, 0.1 to 0.8% of phosphorus, and 0.06 to 1% of silicon, with the remainder being copper and unavoidable impurities. 중량%로 니켈 1.0∼8%, 인 0.1∼0.8% 및 실리콘 0.06∼1%을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되며, 산소함유량이 20ppm 이하인 것을 특징으로 하는 전자기기용 동합금.A copper alloy for electronic equipment comprising 1.0 to 8% by weight of nickel, 0.1 to 0.8% of phosphorus, and 0.06 to 1% of silicon, the remainder being copper and inevitable impurities, and having an oxygen content of 20 ppm or less. 중량%로 니켈 1.0∼8%, 인 0.1∼0.8% 및 실리콘 0.06∼1% 및 아연 0.03∼05%를 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 것을 특징으로 하는 전자기기용 동합금.A copper alloy for electronic equipment containing 1.0 to 8% by weight of nickel, 0.1 to 0.8% of phosphorus, 0.06 to 1% of silicon, and 0.03 to 05% of zinc, with the remainder being copper and unavoidable impurities. 중량%로 니켈 1.0∼8%, 인 0.1∼0.8% 및 실리콘 0.06∼1% 및 아연 0.03∼05%를 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되며, 산소함유량이 20ppm 이하인 것을 특징으로 하는 전자기기용 동합금.Electromagnetic characterized by containing 1.0 to 8% by weight of nickel, 0.1 to 0.8% of phosphorus, 0.06 to 1% of silicon and 0.03 to 05% of zinc, the remainder being copper and unavoidable impurities, and having an oxygen content of 20 ppm or less. Copper alloy for use. 중량%로 1.0∼8%의 니켈, 0.1∼0.8%의 인, 0.06∼1%의 실리콘을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열하여 물 또는 기름속에서 급냉하는 공정과 그후 350-500℃의 온도범위에서 10분이상 가열을 실행하는 공정을 행하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon by weight, and the remainder being copper and unavoidable impurities, in the temperature range of 750-950 ° C. prior to final rolling. A method of manufacturing a copper alloy for an electronic device, characterized by performing a step of quenching in water or oil by heating for at least 1 minute and then heating at least 10 minutes in a temperature range of 350-500 ° C. 중량%로 1.0∼8% 니켈 , 0.1∼0.8%의 인, 0.06∼1%의 실리콘을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열하고, 이후 4℃/분 이하에서 서서히 냉각하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon, and the remainder of which is copper and inevitable impurities, in the temperature range of 750-950 ° C. prior to final rolling. Heating for more than minutes, and then slowly cooling at 4 ℃ / min or less, the manufacturing method of the copper alloy for electronic devices. 중량%로 1.0∼8% 니켈 , 0.1∼0.8%의 인, 0.06∼1%의 실리콘을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열하고, 500℃까지는 1℃/분이상에서 냉각하고, 500∼350℃ 사이에서는 적어도 1시간이상 유지 또는 서서히 냉각하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon, and the remainder of which is copper and inevitable impurities, in the temperature range of 750-950 ° C. prior to final rolling. A method of manufacturing a copper alloy for an electronic device, characterized by heating at least for 1 minute, cooling to 500 ° C at 1 ° C / minute or more, and maintaining or gradually cooling at least 1 hour between 500 ° C and 350 ° C. 중량%로 1.0∼8% 니켈 , 0.1∼0.8%의 인, 0.06∼1%의 실리콘, 0.03∼0.5%의 아연을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열하여 물 또는 기름속에서 급냉하는 공정과 그후 500∼350℃의 온도범위에서 10분이상의 가열을 실행하는 공정을 행하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon, 0.03 to 0.5% zinc, the remainder being copper and unavoidable impurities, before finishing rolling, A method of manufacturing a copper alloy for an electronic device, characterized by performing a step of quenching in water or oil by heating at least 1 minute in a temperature range of 950 ° C. and then heating at least 10 minutes in a temperature range of 500 to 350 ° C. 중량%로 1.0∼8% 니켈 , 0.1∼0.8%의 인, 0.06∼1%의 실리콘, 0.03∼0.5%의 아연을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열하고, 이후 4℃/분 이하에서 서서히 냉각하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon, 0.03 to 0.5% zinc, the remainder being copper and unavoidable impurities, before finishing rolling, Method of manufacturing a copper alloy for an electronic device, characterized in that the heating for 1 minute or more in the temperature range of 950 ℃ and then gradually cooled at 4 ℃ / min or less. 중량%로 1.0∼8% 니켈 , 0.1∼0.8%의 인, 0.06∼1%의 실리콘, 0.03∼0.5%의 아연을 함유하고, 나머지 부분이 구리 및 불가피한 불순물로 되는 동합금을 최종마무리 압연전에 750-950℃의 온도범위에서 1분이상 가열한 후 500℃까지는 1℃/분 이상에서 냉각하고, 500∼350℃ 사이에서는 적어도 1시간이상 유지 또는 서서히 냉각하는 것을 특징으로 하는 전자기기용 동합금의 제조방법.A copper alloy containing 1.0 to 8% nickel by weight, 0.1 to 0.8% phosphorus, 0.06 to 1% silicon, 0.03 to 0.5% zinc, the remainder being copper and unavoidable impurities, before finishing rolling, A method of manufacturing a copper alloy for an electronic device, characterized by heating at a temperature range of 950 ° C. for 1 minute or more and cooling to 500 ° C. or more at 1 ° C./min or more, and maintaining or slowly cooling at least 1 hour between 500 and 350 ° C. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890004455A 1988-04-12 1989-04-04 Cupper alloy for electronic articles and its making process KR930006292B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63089383A JPH01263243A (en) 1988-04-12 1988-04-12 Copper alloy for electronic equipment
JP63-89383 1988-04-12
JP89383 1988-04-12
JP288041 1988-11-15
JP63288041A JPH0733563B2 (en) 1988-11-15 1988-11-15 Manufacturing method of copper alloy strip for electronic equipment
JP63-288041 1988-11-15

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KR890016194A true KR890016194A (en) 1989-11-28
KR930006292B1 KR930006292B1 (en) 1993-07-12

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MY168617A (en) * 2014-04-21 2018-11-14 Nippon Micrometal Corp Bonding wire for semiconductor device

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US2155407A (en) * 1938-04-28 1939-04-25 Chase Brass & Copper Co Electrical conductor
US2155405A (en) * 1938-04-28 1939-04-25 Chase Brass & Copper Co Electrical conductor
DE3417273C2 (en) * 1984-05-10 1995-07-20 Poong San Metal Corp Copper-nickel alloy for electrically conductive material for integrated circuits

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